Abstract: The invention relates to a CMOS-compatible lateral DMOS transistor and to a method for producing such a transistor. The aim of the invention is to provide a CMOS-compatible DMOS transistor that can be optionally designed for very high drain voltages or for the power amplification at very high frequencies by choosing the appropriate layout and that can be produced with little additional technical effort as compared to the conventional sub-&mgr;m production technology for CMOS circuits. To this end, a gate insulator of the inventive CMOS-compatible lateral DMOS transistor has a uniform thickness across the entire current-carrying (active) zone below a control gate.

Abstract: The invention concerns a process for affinity viscosimetry and a viscosimetric affinity sensor on the basis of sensitive liquids with analyte-dependent viscosity which are localized within a perfusable dialysis chamber and contain colloidal constituents which are cross-linked by affinity bonds. The viscosimetric affinity sensor according to this invention is characterized by the spatial or temporal separation of analyte diffusion from the measurement of the flow resistance for such sensitive liquid flowing through a capillary, needle-like body or other liquid conductor, which integrated combination of a dialysis chamber with viscosimeter enables a researcher to make measurements under lab conditions that provide spatial separation of the dialysis process from the rheological analysis, as done under test conditions where the maximum shear rate of sensitive liquid in the viscosity sensor is at least twice that shear rate of sensitive liquid experienced in the dialysis chamber.

Abstract: This invention relates to a bi-polar transistor and a procedure for its manufacture. The task of the invention is to propose a bi-polar transistor and a procedure for its manufacture that eliminates the disadvantages of conventional arrangements for a simple polysilicon technology with differential epitaxy for the manufacture of the base, in order to further improve especially the high-speed properties of a bi-polar transistor, to produce highly conductive connections between the metal contacts and the active (inner) transistor region as well as a minimized passive transistor surface, and to simultaneously avoid any additional process complexity and increased contact resistance. This invention resolves the task in that, by creating suitable epitaxy process conditions, the polysilicon layer is deposited on the insulator zone with a greater thickness than the epitaxy layer in the active transistor zone.

Abstract: An apparatus for measuring the viscosity of a fluid having a first rigid member extending from a body of semiconductor material and provided with a first conductive path and a second resiliently flexible member provided with a second conductive path and arranged in cantilever fashion over the rigid member. At least one of the conductive paths may be selectively energized to brig about relative movement between the rigid and flexible member. Subsequent deenergization of the path causes the resiliently flexible member to return to its initial position, the rate of return being measured to derive a signal representative of the viscosity. Also described are methods of carrying out the measurement and of fabricating the apparatus.

Abstract: The invention concerns a process for affinity viscosimetry and a viscosimetric affinity sensor on the basis of sensitive liquids with analyte-dependent viscosity which are localized within a perfusable dialysis chamber and contain colloidal constituents which are cross-linked by affinity bonds. The viscosimetric affinity sensor according to this invention is characterized by the spatial or temporal separation of analyte diffusion from the measurement of the flow resistance. An important advantage of the invention consists in small volume-displacement and negligible structural change within the matrix to be investigated.

Abstract: The invention concerns a process for affinity viscosimetry and a viscosimetric affinity sensor on the basis of sensitive liquids with analyte-dependent viscosity which are localized within a perfusable dialysis chamber and contain colloidal constituents which are cross-linked by affinity bonds. The viscosimetric affinity sensor according to this invention is characterized by the spatial or temporal separation of analyte diffusion from the measurement of the flow resistance for such sensitive liquid flowing through a capillary, needle-like body or other liquid conductor, which integrated combination of a dialysis chamber with viscosimeter enables a researcher to make measurements under lab conditions that provide spatial separation of the dialysis process from the rheological analysis, as done under test conditions where the maximum shear rate of sensitive liquid in the viscosity sensor is at least twice that shear rate of sensitive liquid experienced in the dialysis chamber.

Abstract: A semiconductor detector structure consists of a unipolar or single-pole nsistor disposed or arranged on a substantially depleted semiconductor body, with a drain, a source, a resetting contact, a top gate and a potentially floating layer forming at least one gate of the unipolar transistor, as well as at least one capacitor. The source is directly connected to the first electrode or electrodes of the capacitor or capacitors. The capacitor or the capacitors are integrated jointly with or into the semiconductor structure.

Abstract: A method of fabricating a semiconductor device. A series of layers is deposited on a semiconductor substrate of a first conductivity type to form a shielding arrangement, including an upper part and a lower part, to provide a shield against accelerated ions. This is followed by forming openings in the shielding arrangement by microlithographic processes and anisotropic etching, and then implanting ions via the openings to form one of a base area and a base-connection area of the first conductivity type. Edges of the openings are displaced by isotropic etching of the lower part of the shielding arrangement.