Abstract: Embodiments include in response to monitoring a processor during operation, detecting a first number of core recovery events in the processor, determining that the first number of core recovery events fulfills a first condition for the first core recovery events threshold, and modifying a value of at least one droop sensor parameter of the processor by a first amount. The at least one droop sensor parameters affects a sensitivity to a voltage droop. In response to modifying the value of the droop sensor parameter by the first amount, a second number of core recovery events is detected in the processor. It is determined that the second number of core recovery events fulfills a second condition for a second core recovery events threshold, and the value of the at least one droop sensor parameter is modified by a second amount.

Abstract: A method, system, and computer program product for bit flip aware latch placement in integrated circuit generation are provided. The method identifies a chip design for an integrated circuit. A set of chip design constraints, associated with the chip design, is identified. A set of checking groups, associated with a plurality of latches to be placed in the chip design, is determined. Based on the set of chip design constraints and the set of checking groups, a placement scheme for the plurality of latches is selected. The method places the plurality of latches within the chip design based on the placement scheme and the set of checking groups.

Abstract: Embodiments include in response to monitoring a processor during operation, detecting a first number of throttling amounts in the processor, determining that the first number of throttling amounts fulfills a first condition regarding a throttling amounts threshold, and modifying a voltage level of the processor by a first amount. Embodiments include in response to modifying the voltage level of the processor by the first amount, detecting a second number of throttling amounts in the processor, determining that the second number of throttling amounts fulfills a second condition regarding the throttling amounts threshold, and modifying the voltage level of the processor by a second amount.

Abstract: Embodiments include in response to monitoring a processor during operation, detecting a first number of core recovery events in the processor, determining that the first number of core recovery events fulfills a first condition for the first core recovery events threshold, and modifying a value of at least one droop sensor parameter of the processor by a first amount. The at least one droop sensor parameters affects a sensitivity to a voltage droop. In response to modifying the value of the droop sensor parameter by the first amount, a second number of core recovery events is detected in the processor. It is determined that the second number of core recovery events fulfills a second condition for a second core recovery events threshold, and the value of the at least one droop sensor parameter is modified by a second amount.

Abstract: The method and systems described herein provide for identifying and mitigating undesirable power or voltage fluctuations in regions of a semiconductor device. For example, embodiments include detecting a region, such as an individual processor, of a processor chip is exhibiting a reduced power draw and a resulting localized voltage spike (e.g., a spike that exceeds Vmax) that would accelerate overall device end-of-life (EOL). The described systems respond by activating circuits or current generators located in the given region to draw additional power via a protective current. The protective current lowers the local voltages spikes back to within some pre-specified range (e.g., below a Vmax). The resulting reduction in the time above Vmax in testing reduces the number of devices that will need to be discarded due to Vmax violations as well as increases the expected reliability and lifespan of the device in operation.

Abstract: The method and systems described herein provide for identifying and mitigating undesirable power or voltage fluctuations in regions of a semiconductor device. For example, embodiments include detecting a region, such as an individual processor, of a processor chip is exhibiting a reduced power draw and a resulting localized voltage spike (e.g., a spike that exceeds Vmax) that would accelerate overall device end-of-life (EOL). The described systems respond by activating circuits or current generators located in the given region to draw additional power via a protective current. The protective current lowers the local voltages spikes back to within some pre-specified range (e.g., below a Vmax). The resulting reduction in the time above Vmax in testing reduces the number of devices that will need to be discarded due to Vmax violations as well as increases the expected reliability and lifespan of the device in operation.