Abstract: A process chamber containing a substrate has at least one process gas introduced for reacting with a surface of the substrate to form a layer on the substrate. The gas creates a certain pressure in the chamber. At a certain time, the gas is expelled to end the reaction, and the gas pressure is reduced. The detection of the change in pressure in said chamber automatically controls valves to supply a second gas into the chamber to further react with the surface of the substrate.

Abstract: A process chamber has one or more gas inlets. One gas inlet is formed as a ring surrounding the periphery of a substrate retained in the process chamber. Added control over a deposition process is obtained by such a ring. In one embodiment, the ring is moveable. Various arrangements of gas inlets and valves are described.

Abstract: A system and method for that allows one part of an atomic layer deposition (ALD) process sequence to occur at a first temperature while allowing another part of the ALD process sequence to occur at a second temperature. In such a fashion, the first temperature can be chosen to be lower such that decomposition or desorption of the adsorbed first reactant does not occur, and the second temperature can be chosen to be higher such that comparably greater deposition rate and film purity can be achieved. Additionally, the invention relates to improved temperature control in ALD to switch between these two thermal states in rapid succession. It is emphasized that this abstract is provided to comply with rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. [37 C.F.R. §1.72(b)].

Abstract: A system and sequential method for integrated, in-situ modification of a substrate and subsequent atomic layer deposition of a thin film onto the substrate in an evacuated chamber comprising introducing at least one feed gas into the chamber; generating a plasma from the feed gas; exposing said substrate to ions and/or radicals formed by the plasma; modulating any ions; reacting the substrate with said modulated ions and/or radicals to remove any contaminants from the substrate and producing a modified substrate.

Abstract: A method and apparatus for use with an electrostatic chuck is described, which incorporates a capacitance measurement circuit for monitoring the capacitance between a wafer substrate and an electrode, or between a plurality of electrodes of the chuck. The capacitance measurement is used for continuous closed-loop control of the chuck operation, in which the voltage applied to the chuck is adjusted according to the measured capacitance.

Abstract: A method and apparatus that provides a dechucking voltage applied to an electrostatic chuck that facilitates removal of a workpiece or workpiece therefrom. The method incorporates residual chucking force information obtained from the preceding dechuck operation to modify and improve the dechucking algorithm for the subsequent wafer dechucking cycle. To avoid charge accumulation on the electrostatic chuck when processing a succession of workpieces, the chucking and dechucking voltages reverse polarity after each workpiece is dechucked.

Abstract: A method for rapidly dechucking a wafer from a chuck by applying a voltage that between the wafer and the electrode that performs a hysteretic discharge cycle such that residual charge is removed. The voltage is a decaying oscillating waveform that provides a decaying electric field at the wafer to chuck surface interface. The form of this field at this interface is very important to achieving rapid dechucking of less than 200 mS.

Abstract: An apparatus for a wafer processing system comprising a wafer support chuck attached to a gas delivery system for delivery of a gas to the backside of a wafer supported by the chuck. The gas delivery system has a gas shutoff valve directly connected to the wafer chuck. The shutoff valve provides a positive shutoff with negligible leak rate. By placing the valve in close proximity to the wafer chuck, the volume of the backside gas trapped between the valve and the wafer is minimized. Release of this trapped gas into the process chamber during wafer transfer has no adverse impact on the performance of the processing system.