Abstract: A wafer has a substrate and a laminated layer formed on the substrate. The laminated layer includes low-permittivity insulating films. The laminated layer forms a plurality of crossing division lines and a plurality of devices formed in separate regions defined by the division lines. The processing method includes a cut groove forming step of cutting the substrate of the wafer along each division line by using a first cutting blade having a first thickness, thereby forming a cut groove having a depth smaller than the thickness of the substrate, so that a first uncut portion of the substrate is formed below the cut groove, and a dividing step of dividing the first uncut portion and the laminated layer along each division line by using a second cutting blade having a second thickness smaller than the first thickness or by etching after performing the cut groove forming step.

Abstract: A wafer processing method including a fixing step of providing a wafer on a protective member so that a device area of the wafer faces an unevenness absorbing member provided in a recess of the protective member and providing an adhesive outside the device area to thereby fix the protective member and the wafer, a grinding step of holding the protective member on a holding table in the condition where the back side of the wafer is exposed and next grinding the back side of the wafer by using a grinding unit to thereby reduce the thickness of the wafer to a predetermined thickness, and a removing step of removing the protective member from the wafer. The adhesive is locally provided outside of the device area, so that the protective member can be easily removed from the wafer without leaving the adhesive on the front side of each device.

Abstract: A wafer processing method including a fixing step of providing a wafer on a protective member so that a device area of the wafer faces an unevenness absorbing member provided in a recess of the protective member and providing an adhesive outside the device area to thereby fix the protective member and the wafer, a grinding step of holding the protective member on a holding table in the condition where the back side of the wafer is exposed and next grinding the back side of the wafer by using a grinding unit to thereby reduce the thickness of the wafer to a predetermined thickness, and a removing step of removing the protective member from the wafer. The adhesive is locally provided outside of the device area, so that the protective member can be easily removed from the wafer without leaving the adhesive on the front side of each device.

Abstract: Disclosed is a method for processing a semiconductor wafer having plural devices divided by streets on a front surface thereof, the method comprising: adhering an adhesive film to a back surface of the semiconductor wafer; cutting the semiconductor wafer along the streets, thereby making pieces of devices; wherein the adhesive film is cut into a shape and a size identical to those of the streets by a laser beam; the semiconductor wafer is positioned such that streets coincide with cut lines of the adhesive film; the adhesive film is adhered to the semiconductor wafer.

Abstract: A method for adhering a protecting tape to a protection surface of a wafer is disclosed. The method comprises: cutting the protecting tape of which one surface is processed to be an adhering surface into predetermined size and shape; storing the protecting tape so as to release tensile force therein; holding the protecting tape by a protecting tape holding device; holding the wafer by a wafer holding device; locating the protecting tape and the wafer in a vacuum chamber in such a way that the adhering surface and the protection surface are facing each other; evacuating an interior of the vacuum chamber; and bringing the protecting tape holding device and/or the wafer holding device close to each other, thereby adhering the adhering surface of the protecting tape and the protection surface of the wafer.

Abstract: To facilitate handling of a wafer with its thickness reduced by grinding its rear surface, and prevent any protrusions and depressions matching those of the front surface from being formed on its rear surface, the method including the steps of disposing an unevenness absorbing pad between a chuck table and a device region of the wafer for absorbing unevenness of the device region, and causing the wafer held by the chuck table to be rotated and ground, while having a grindstone kept in contact with rear surface of the wafer at center of rotation of the wafer, and out of contact with a portion of its rear surface opposite from the outer excess region, thereby forming a concavity in the portion of the rear surface of the wafer opposite from the device region, and forming an annular reinforcing portion including the outer excess region around the concavity.

Abstract: To facilitate handling of a wafer with its thickness reduced by grinding its rear surface, and prevent any protrusions and depressions matching those of the front surface from being formed on its rear surface, the method including the steps of disposing an unevenness absorbing pad between a chuck table and a device region of the wafer for absorbing unevenness of the device region, and causing the wafer held by the chuck table to be rotated and ground, while having a grindstone kept in contact with rear surface of the wafer at center of rotation of the wafer, and out of contact with a portion of its rear surface opposite from the outer excess region, thereby forming a concavity in the portion of the rear surface of the wafer opposite from the device region, and forming an annular reinforcing portion including the outer excess region around the concavity.

Abstract: To facilitate handling a wafer during processing even when the wafer is formed thin, a protective member is stuck through an adhesive agent to an outer-peripheral surplus region of a front surface of the wafer, the region being formed with no individual devices, and a back surface of the wafer is ground in a state where the whole front surface of the wafer is supported by the protective member. Since an outer periphery of the wafer is reinforced by the protective member, the wafer can be easily handled even after having been thinned by the grinding.

Abstract: Disclosed is a method for generating chip stacks during the production of chips from wafers, the chips located on the wafer being separated from one another, the wafer being ground thin and the chips being stacked to form chip stacks, the chips being checked for the purpose of a functional check, characterized in that the chips are checked in a first work step, that adhesive material is applied on the good chips, whereas the bad chips are not provided with adhesive material, that the wafer is assembled and ground thin afterwards and that the bad chips are subsequently removed and replaced by good chips.