Patents by Inventor Karl-Heinz Schlereth

Karl-Heinz Schlereth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7306960
    Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: December 11, 2007
    Assignee: Osram GmbH
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Publication number: 20060138439
    Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Application
    Filed: December 19, 2005
    Publication date: June 29, 2006
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Patent number: 7026657
    Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: April 11, 2006
    Assignee: Osram GmbH
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Patent number: 6944199
    Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
    Type: Grant
    Filed: June 12, 2003
    Date of Patent: September 13, 2005
    Assignee: Osram GmbH
    Inventors: Bruno Acklin, Martin Behringer, Karl Ebeling, Christian Hanke, Jörg Heerlein, Lutz Korte, Johann Luft, Karl-Heinz Schlereth, Werner Späth, Zeljko Spika
  • Publication number: 20050138934
    Abstract: The invention relates to an optoelectronic assembly having an optoelectronic or passive optical component and a cooling element for cooling the optoelectronic or passive optical component. According to the invention, the cooling element is a micropeltier cooler, wherein the component is arranged either directly thereon or a carrier substrate is arranged therebetween.
    Type: Application
    Filed: February 14, 2002
    Publication date: June 30, 2005
    Inventors: Martin Weigert, Axel Schubert, Franz Auracher, Karl-Heinz Schlereth, Gustav Muller, Hans-Ludwig Althaus
  • Patent number: 6891278
    Abstract: A semiconductor component has at least one Peltier element and at least one thermogenerator element that are thermally coupled to one another via a coupling device. By virtue of the thermal coupling of the Peltier element and the thermogenerator element through the coupling device, it is possible to use the Peltier element to cool a microstructure, in particular an optoelectronic component (e.g. a laser diode). Efficient temperature regulation and efficient operation of an optoelectronic component are thus possible.
    Type: Grant
    Filed: August 20, 2003
    Date of Patent: May 10, 2005
    Assignee: Infineon Technologies AG
    Inventors: Gustav Müller, Axel Schubert, Karl-Heinz Schlereth, Harald Böttner
  • Patent number: 6818470
    Abstract: Method for fabricating a thermoelectric converter having a plurality of series-connected thermoelement cells, which are connected in series with one another by means of a plurality of first electrical conductor tracks (3) and each of which has a first body (4) made of thermoelectric material of a first conduction type and a second body (5) made of thermoelectric material of a second conduction type. The thermoelement cells are fabricated by means of method steps appertaining to semiconductor technology.
    Type: Grant
    Filed: July 24, 2001
    Date of Patent: November 16, 2004
    Assignee: Infineon Technologies AG
    Inventors: Bruno Acklin, Karl-Heinz Schlereth, Harald Boettner, Axel Schubert
  • Patent number: 6783284
    Abstract: An optical for wavelength reference measurement has in essence an optical conductor with integrated fiber Bragg grating that has a transmission maximum at a desired wavelength. Arranged downstream of the fiber Bragg grating is a photoreceiver receiving the measuring radiation beam passing through the fiber Bragg grating. If desired, it is possible to use a beam splitter to produce a reference radiation beam that is detected in a further photoreceiver.
    Type: Grant
    Filed: September 24, 2002
    Date of Patent: August 31, 2004
    Assignee: Infineon Technologies AG
    Inventors: Hans-Ludwig Althaus, Joachim Reill, Karl-Heinz Schlereth
  • Patent number: 6734467
    Abstract: A white light source is described and has a UV-/blue-emitting semiconductor LED and an embedding compound provided with phosphor particles. The LED is provided with a plurality of light-emitting zones that are applied within a layer structure on a common substrate. An emission maxima of the light-emitting zones are energetically detuned relative to one another by different choice of the composition or of the layer thickness of the semiconductor material.
    Type: Grant
    Filed: May 3, 2002
    Date of Patent: May 11, 2004
    Assignee: Osram Opto Semiconductors GmbH & Co. oHG
    Inventors: Karl-Heinz Schlereth, Volker Härle, Norbert Stath
  • Publication number: 20040046223
    Abstract: A semiconductor component has at least one Peltier element and at least one thermogenerator element that are thermally coupled to one another via a coupling device. By virtue of the thermal coupling of the Peltier element and the thermogenerator element through the coupling device, it is possible to use the Peltier element to cool a microstructure, in particular an optoelectronic component (e.g. a laser diode). Efficient temperature regulation and efficient operation of an optoelectronic component are thus possible.
    Type: Application
    Filed: August 20, 2003
    Publication date: March 11, 2004
    Inventors: Gustav Muller, Axel Schubert, Karl-Heinz Schlereth, Harald Bottner
  • Publication number: 20040036080
    Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.
    Type: Application
    Filed: August 11, 2003
    Publication date: February 26, 2004
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Publication number: 20040028102
    Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
    Type: Application
    Filed: June 12, 2003
    Publication date: February 12, 2004
    Inventors: Bruno Acklin, Martin Behringer, Karl Ebeling, Christian Hanke, Jorg Heerlein, Lutz Korte, Johann Luft, Karl-Heinz Schlereth, Werner Spath, Zeljko Spika
  • Publication number: 20030067658
    Abstract: An optical module for wavelength reference measurement has in essence an optical conductor with integrated fiber Bragg grating that has a transmission maximum at a desired wavelength. Arranged downstream of the fiber Bragg grating is a photoreceiver for receiving the measuring radiation beam passing through the fiber Bragg grating. If desired, it is possible to use a beam splitter to produce a reference radiation beam that is detected in a further photoreceiver.
    Type: Application
    Filed: September 24, 2002
    Publication date: April 10, 2003
    Inventors: Hans-Ludwig Althaus, Joachim Reill, Karl-Heinz Schlereth
  • Patent number: 6538302
    Abstract: The invention relates to a semiconductor chip having a fracture sidewall (4) running at a lateral edge region, and having an electrically active layer (2) ending at the fracture sidewall, in which case at least one fracture-sidewall section which is assigned to the end of the active layer is provided with a passivation layer (10) covering said section. The invention furthermore relates to a method for fabricating such a semiconductor chip.
    Type: Grant
    Filed: September 5, 2000
    Date of Patent: March 25, 2003
    Assignee: Osram Opto Semiconductors GmbH
    Inventor: Karl-Heinz Schlereth
  • Publication number: 20020167014
    Abstract: A white light source is described and has a UV-/blue-emitting semiconductor LED and an embedding compound provided with phosphor particles. The LED is provided with a plurality of light-emitting zones that are applied within a layer structure on a common substrate. An emission maxima of the light-emitting zones are energetically detuned relative to one another by different choice of the composition or of the layer thickness of the semiconductor material.
    Type: Application
    Filed: May 3, 2002
    Publication date: November 14, 2002
    Inventors: Karl-Heinz Schlereth, Volker Harle, Norbert Stath