Abstract: A method of manipulating preferable thin wafers, preferably having a thickness of less than 200 ?m, wherein the wafers are placed prior to polishing or another processing step for reducing the thickness thereof on a transportable electrostatic carrier. The wafers remain on the transportable electrostatic carrier for the duration of and between at least two processing steps, during the manipulating steps and during any necessary intermediate storage.

Abstract: A mobile transportable electrostatic substrate holder is provided that has a diameter or edge length matching the diameter or edge length of a substrate to be transported. The tolerance of the matching dimensions, locally, at certain locations, or everywhere, is less than 0.1 mm. In another embodiment, the substrate holder has a diameter or edge length smaller by 0.1 mm to 30 mm, locally, at certain locations, or everywhere, than the diameter or edge length of the substrate to be transported. In a third embodiment, the substrate holder has a diameter or edge length that is greater by 0.1 mm up to 150 mm, locally, at certain locations, or everywhere, than the diameter or edge length of the substrate to be transported.

Abstract: A mobile transportable electrostatic substrate holder is provided that has a diameter or edge length matching the diameter or edge length of a substrate to be transported. The tolerance of the matching dimensions, locally, at certain locations, or everywhere, is less than 0.1 mm. In another embodiment, the substrate holder has a diameter or edge length smaller by 0.1 mm to 30 mm, locally, at certain locations, or everywhere, than the diameter or edge length of the substrate to be transported. In a third embodiment, the substrate holder has a diameter or edge length that is greater by 0.1 mm up to 150 mm, locally, at certain locations, or everywhere, than the diameter or edge length of the substrate to be transported.

Abstract: A method of manipulating preferable thin wafers, preferably having a thickness of less than 200 &mgr;m, wherein the wafers are placed prior to polishing or another processing step for reducing the thickness thereof on a transportable electrostatic carrier. The wafers remain on the transportable electrostatic carrier for the duration of and between at least two processing steps, during the manipulating steps and during any necessary intermediate storage.

Abstract: An electrostatic chuck for clamping an electrically conducting workpiece includes an electrode that is incorporated between two insulating layers of an organic material, preferably polyimide, and that is mounted, with or without a coating, on a metallic pedestal. An insulating intermediate layer, for example, in the form of an intermediate ring having a thickness equal to or up to 10% greater than the thickness of the electrode, provided for eliminating a gap at the edge of the electrostatic chuck.

Abstract: Powders for producing hard materials in short reaction times are provided, especially for use in electric arc spraying. The powders are produced by bonding metallic and non-metallic starting materials to one another by spray-drying or agglomeration, using an organic or inorganic binder. The metallic starting materials are selected from the group consisting of Al, Ni, Ti, Cr, Mo, V, Zr and Ta, whereas the non-metallic starting materials are selected from the group consisting of Cr.sub.3 C.sub.2, WC, C, SiC, TiB.sub.2, CrB.sub.2, B.sub.4 C, TiC, VC, TiN and Si.sub.3 N.sub.4. In this manner, the metallic and non-metallic starting materials react exothermically during electric arc spraying to produce a hard substance.