Abstract: A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate, supplying a first power level sufficient to promote rearrangement of molecules on a surface of the substrate, waiting a first predetermined period, and, after the first predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying a second power level for a second predetermined period. The second power level is greater than the first power level. The method further includes removing reactants from the process chamber.

Abstract: A line charge volume and methods for use in delivery of gas to a reactor for processing semiconductor wafers is provided. The line charge volume includes a chamber that extends between a first end and a second end, and the first end includes an inlet port and an outlet port. A pressure sensor is integrated with the chamber. The pressure sensor has a measurement side for measuring a deflection of a diaphragm. The diaphragm is directly exposed to an interior of the chamber so that pressure produced by a gas that is provided into the chamber via the inlet port produces a force upon the diaphragm. The measurement side includes electronics for measuring a capacitance value corresponding to the deflection of the diaphragm. The deflection is correlated to a pressure difference, and the pressure difference is equivalent to a pressure volume (Pv) of the chamber.

Abstract: System and methods for processing a substrate using a reactor with multiple heating zones and control of said heating zones using a common terminal shared between two power supplies are provided. The reactor includes a heater assembly for supporting the substrate and a showerhead for supplying process gases into the reactor. An inner heater and an outer heater are integrated in the heater assembly. An inner power supply has a positive terminal connected to a first end of the inner heater and a negative terminal is connected to a second end of the inner heater that is coupled to a common terminal. An outer power supply has a positive terminal connected to a first end of the outer heater and a negative terminal connected to a second end of the outer heater that is coupled to the common terminal. A common-terminal heater module is configured to receive a measured temperature that is proximate to the inner heater.

Abstract: An isolation system includes an input junction coupled to one or more RF power supplies via a match network for receiving radio frequency (RF) power. The isolation system further includes a plurality of channel paths connected to the input junction for distributing the RF power among the channel paths. The isolation system includes an output junction connected between each of the channel paths and to an electrode of a plasma chamber for receiving portions of the distributed RF power to output combined power and providing the combined RF power to the electrode. Each of the channel paths includes bottom and top capacitors for blocking a signal of the different type than that of the RF power. The isolation system avoids a risk of electrical arcing created by a voltage difference between an RF terminal and a non-RF terminal when the terminals are placed proximate to each other.

Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.

Abstract: Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.

Abstract: A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.

Abstract: A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.

Abstract: A generator for processing gases to be delivered to a process chamber used to process a substrate includes a housing that encloses an internal volume. An ultraviolet (UV) bulb is disposed within the internal volume of the housing. The UV bulb has a bulb diameter that fits within the internal major dimension of the housing. A first region, which surrounds the UV bulb, channels a first gas around the UV bulb to cool the UV bulb. A second region, which surrounds the first region, channels a second gas between an input to and an output from the housing. The second region is oriented relative to the UV bulb such that UV energy therefrom interacts with the second gas as this gas flows through the second region. The interaction of the UV energy with the second gas results in the generation of a gas mix that is supplied from the output of the housing into the process chamber, where at least one component of the gas mix is to be used in processing of the semiconductor substrate.

Abstract: An apparatus includes a base having first and second inlets. Inner and outer cylinders are disposed on the base, with the outer cylinder being concentric with the inner cylinder. An inner surface of the inner cylinder defines an internal volume. An outer surface of the inner cylinder and an inner surface of the outer cylinder define a chamber space. An ultraviolet lamp is disposed within the internal volume. A top cover is positioned over the inner and outer cylinders and in a sealing relationship with the cylinders. The top cover has a first passageway in flow communication with the chamber space, and a second passageway in flow communication with the internal volume. The first inlet is in flow communication with the chamber space and the second inlet is in flow communication with the internal volume. A system including a process chamber and an ammonia radical generator also is described.

Abstract: A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. First and second gas sources are in fluid communication with the vacuum chamber. The first gas source is operable to supply a first gas into the vacuum chamber and the second gas source is operable to supply a second gas into the vacuum chamber. A showerhead assembly includes a face plate and back plate. The back plate includes a first gas inlet in fluid communication with the first gas source and a second gas inlet in fluid communication with the second gas source. The face plate includes a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of the back plate such that an inner plenum and an edge plenum are formed between the face plate and the back plate.

Abstract: A chemical deposition apparatus having conductance control, which includes a showerhead module having a faceplate and a backing plate, the showerhead module including a plurality of inlets which deliver reactor chemistries to a cavity and exhaust outlets which remove reactor chemistries, a pedestal module configured to support a substrate and which moves vertically to close the cavity between the pedestal module and an outer portion of the faceplate, and at least one conductance control assembly, which is in fluid communication with the cavity via the exhaust outlets. The at least one conductance control assembly selected from one or more of the following: a ball valve assembly, a fluidic valve, magnetically coupled rotary plates, and/or a linear based magnetic system.

Abstract: A reactor for processing a plurality of substrates includes P processing station assemblies arranged symmetrically around an axis, where P is an integer greater than one. A pedestal carousel assembly includes P pedestal assemblies arranged symmetrically around the axis, each of the P pedestal assemblies including a pedestal. A rotational actuator rotates the pedestal carousel assembly relative to the axis to selectively index the P pedestal assemblies with the P processing station assemblies. Each of the P processing station assemblies processes substrates arranged on corresponding ones of the P pedestal assemblies at the same time.

Abstract: A substrate processing system includes a showerhead that comprises a base portion and a stem portion and that delivers precursor gas to a chamber. A collar connects the showerhead to an upper surface of the chamber. The collar includes a plurality of slots, is arranged around the stem portion of the showerhead, and directs purge gas through the plurality of slots into a region between the base portion of the showerhead and the upper surface of the chamber.

Abstract: A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of a non-metallic material.

Abstract: A substrate processing system includes a showerhead that comprises a base portion and a stem portion and that delivers precursor gas to a chamber. A collar connects the showerhead to an upper surface of the chamber. The collar includes a plurality of slots, is arranged around the stem portion of the showerhead, and directs purge gas through the plurality of slots into a region between the base portion of the showerhead and the upper surface of the chamber.

Abstract: A gas delivery system for a substrate processing system includes first and second valves, a first gas channel, and a cylinder. The first valve includes a first inlet and a first outlet. The first outlet is in fluid communication with a processing chamber of the substrate processing system. The second valve includes a second inlet and a second outlet. The cylinder defines a second gas channel having a first end and a second end. The cylinder is at least partially disposed within the first gas channel such that the cylinder and the first gas channel collectively define a flow channel. The flow channel is in fluid communication with the first end of the second gas channel and with the first inlet. A third gas channel is in fluid communication with the second end of the second gas channel and with the second inlet.

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.

Abstract: The present invention relates to a cyclic deposition process suitable for depositing an elemental film. The process employs an enhanced atomic layer deposition technique.

Abstract: A vapor delivery system includes an ampoule to store liquid precursor and a heater to partially vaporize the liquid precursor. A first valve communicates with a push gas source and the ampoule. A second valve supplies vaporized precursor to a heated injection manifold. A valve manifold includes a first node in fluid communication with an outlet of the heated injection manifold, a third valve having an inlet in fluid communication with the first node and an outlet in fluid communication with vacuum, a fourth valve having an inlet in fluid communication with the first node and an outlet in fluid communication with a second node, a fifth valve having an outlet in fluid communication with the second node, and a sixth valve having an outlet in fluid communication with the second node. A gas distribution device is in fluid communication with the second node.