Abstract: A method and system for 3D printing for creating at least two discrete sections of powder on a substrate, segmenting the substrate to isolate the at least two discrete sections of powder, compacting the powder on a segment of the substrate, removing loose/non-compacted powder from the segment of the substrate, create a printed/processed layer by performing one or more of a printing process or a processing operation on the segment of substrate, and transferring the printed/processed layers from the segment of substrate to a build platform.

Abstract: The disclosed and claimed subject matter relates to crystalline ferroelectric materials that include a mixture of hafnium oxide and zirconium oxide having a substantial (i.e., approximately 40% or more) or majority portion of the material in a ferroelectric phase as deposited (i.e., without the need for further processing, such as a subsequent capping or annealing) and methods for preparing and depositing these materials.

Abstract: Techniques for creating a high aspect feature and testing the efficacy of a gas-phase deposition process are provided. An example of a method for thin film deposition in a high aspect ratio feature includes preparing a first substrate for a material deposition process, depositing a plurality of spacers on a top surface of the first substrate, disposing a bottom surface of a second substrate on the plurality of spacers, and performing a gas-phase material deposition on the first substrate and the second substrate.

Abstract: Techniques for creating a high aspect feature and testing the efficacy of a gas-phase deposition process are provided. An example of a method for thin film deposition in a high aspect ratio feature includes preparing a first substrate for a material deposition process, depositing a plurality of spacers on a top surface of the first substrate, disposing a bottom surface of a second substrate on the plurality of spacers, and performing a gas-phase material deposition on the first substrate and the second substrate.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: Embodiments provided herein describe systems and method for processing substrates. A substrate is provided. A showerhead is positioned above the substrate. The showerhead includes a plurality of injection ports, at least one isolation channel, and at least one exhaust port on a bottom surface thereof. The at least one isolation channel separates the plurality of injection ports into two or more sections. The at least one exhaust port is positioned within the at least one isolation channel. The plurality of injection ports are not in fluid communication with the at least one exhaust port within the showerhead. At least one processing fluid is caused to be delivered from the plurality of injection ports onto the substrate. At least some of the at least one processing fluid is caused to be removed from the substrate through the at least one exhaust port.

Abstract: A co-extrusion device includes at least one first inlet port to receive a first material, at least one second inlet port to receive a second material, a first combining channel arranged to receive the first material and the second material and combine the first and second materials into a first combined flow flowing in a first direction, a splitter channel arranged to receive the first combined flow and to split the first combined flow into at least two split flows in a second direction at least partially orthogonal to the first direction, wherein each split flow consists of the first and second materials, a second combining channel arranged to receive the split flows and combine the split flows into a second combined flow in the first direction, and at least one exit orifice arranged to allow the materials to exit the device as a single flow.

Abstract: A method for depositing a structure comprising interdigitated materials includes merging flows of at least two materials in a first direction into a first combined flow, dividing the first combined flow in a second direction to produce at least two separate flows, wherein the second direction is perpendicular to the first direction, and merging the two separate flows into a second combined flow.

Abstract: Provided are novel compositions of current compliance layers (CCLs) as well as novel methods of fabricating such CCLs and novel architectures of arranging CCLs and memory cells in memory arrays. A CCL may comprise one of sulfur (S), selenium (Se), and tellurium (Te). The CCL may further comprise one of germanium (Ge) and silicon (Si). CCLs may be fabricated as amorphous structure and remain amorphous when heated to 400° C. or 450° C. and above. In some embodiments, CCLs have crystallization temperatures of greater than 400° C. and, in some embodiments, glass transition temperatures of greater than 400° C. CCLs may be fabricated using atomic layer deposition (ALD) as a nanolaminate of layers having different compositions. The composition, number, and arrangement of the layers in the nanolaminate is specifically selected to yield a desired composition of CCL.

Abstract: A printed fuel cell having integrated gas channels, and having an anode layer, where a first gas diffusion electrode layer is periodically fixed to the anode layer, wherein the periodically fixed first gas diffusion electrode layer defines hydrogen flow field channels. A first catalyst material is coated or infused to the first gas diffusion electrode layer. An electrolyte membrane covers portions of the anode layer and first gas diffusion electrode layer with the first catalyst material. A second catalyst material is coated or infused to the electrolyte membrane. A second gas diffusion electrode layer is in operative association with the electrolyte membrane and second catalyst material, on a surface of the electrolyte membrane different from a surface of the electrolyte membrane which is in contact with the first gas diffusion electrode layer, and a perforated cathode is in contact with the second gas diffusion electrode layer.

Abstract: Embodiments provided herein describe systems and method for processing substrates. A substrate is provided. A showerhead is positioned above the substrate. The showerhead includes a plurality of injection ports, at least one isolation channel, and at least one exhaust port on a bottom surface thereof. The at least one isolation channel separates the plurality of injection ports into two or more sections. The at least one exhaust port is positioned within the at least one isolation channel. The plurality of injection ports are not in fluid communication with the at least one exhaust port within the showerhead. At least one processing fluid is caused to be delivered from the plurality of injection ports onto the substrate. At least some of the at least one processing fluid is caused to be removed from the substrate through the at least one exhaust port.

Abstract: A method comprises flowing process solution and electrode solution into a BPMED apparatus, applying a voltage such that the process solution is acidified and basified and dissolved CO2 is generated, flowing the process solution out of the apparatus, and desorbing CO2 out of the process solution. A method for desorbing CO2 from an ocean comprises flowing seawater and electrode solution into a BPMED apparatus, applying a voltage such that dissolved CO2 is generated, flowing the seawater out of the apparatus, and desorbing CO2 out of the seawater. A method for producing a desalted solution and CO2 gas comprises flowing process solution and electrode solution into a BPMED apparatus that includes one or more three-compartment cells, applying a voltage such that the process solution is acidified, basified, and desalted, flowing the process solution out of the apparatus, and desorbing CO2 out of the process solution.

Abstract: An electrode structure has a layer of at least two interdigitated materials, a first material being an electrically conductive material and a second material being an ionically conductive material, the materials residing co-planarly on a membrane in fluid form, at least one of the interdigitated materials forming a feature having an aspect ratio greater than one.

Abstract: Embodiments provided herein describe solid-state lithium batteries and methods for forming such batteries. A first current collector is provided. A first electrode is formed above the first current collector. The first electrode has at least one void formed therein. A fluidic, ionically-conductive material is infused into the at least one void within the first electrode. A solid electrolyte is formed above the first electrode. A second electrode is formed above the solid electrolyte. A second current collector is formed above the second electrode.

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract: Inline methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings by printing electroless plating solution into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating.

Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Abstract: A co-extrusion device includes at least one first inlet port to receive a first material, at least one second inlet port to receive a second material, a first combining channel arranged to receive the first material and the second material and combine the first and second materials into a first combined flow flowing in a first direction, a splitter channel arranged to receive the first combined flow and to split the first combined flow into at least two split flows in a second direction at least partially orthogonal to the first direction, wherein each split flow consists of the first and second materials, a second combining channel arranged to receive the split flows and combine the split flows into a second combined flow in the first direction, and at least one exit orifice arranged to allow the materials to exit the device as a single flow.