Patents by Inventor Karl-Magnus Persson

Karl-Magnus Persson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10361284
    Abstract: A method for fabrication of vertical nanowire MOSFETs is considered using a gate-last process. The top ohmic electrode is first fabricated and may be used as a mask to form a gate recess using etching techniques. The gate is thereafter formed allowing a large degree in access resistance reduction.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: July 23, 2019
    Inventors: Lars-Erik Wernersson, Johannes Svensson, Martin Berg, Karl-Magnus Persson, Erik Lind
  • Publication number: 20180219084
    Abstract: A method for fabrication of vertical nanowire MOSFETs is considered using a gate-last process. The top ohmic electrode is first fabricated and may be used as a mask to form a gate recess using etching techniques. The gate is thereafter formed allowing a large degree in access resistance reduction.
    Type: Application
    Filed: June 21, 2016
    Publication date: August 2, 2018
    Inventors: Lars-Erik Wernersson, Johannes Svensson, Martin Berg, Karl-Magnus Persson, Erik Lind