Abstract: The invention provides a novel semiconductive polymer composition with improved smoothness and dispersibility of carbon black when compounding the polymer composition and feasible balance with other properties such as volume resistivity. The semiconductive polymer composition comprises (a) from 30 to 90 wt % of a polymer component, (b) from 10 to 70 wt % of carbon black and the carbon black (b) has a mass pellet strength (MPS) according to ASTM D1937-13 of from 50 to 250 N. The invention further relates to a process for preparing the semiconductive polymer composition comprising the steps of: i) introducing 30-90 wt % of a polymer component as defined above and 0-8 wt % additives in a mixer device and mixing the polymer component and additives at elevated temperature such that a polymer melt is obtained; ii) adding 10-70 wt % of a carbon black as defined above to the polymer melt and further mixing of the polymer melt.

Abstract: The invention provides a novel semiconductive polymer composition with improved smoothness and dispersibility of carbon black when compounding the polymer composition and feasible balance with other properties such as volume resistivity. The semiconductive polymer composition comprises (a) from 30 to 90 wt % of a polymer component, (b) from 10 to 70 wt % of carbon black and the carbon black (b) has a mass pellet strength (MPS) according to ASTM D1937-13 of from 50 to 250 N. The invention further relates to a process for preparing the semiconductive polymer composition comprising the steps of: i) introducing 30-90 wt % of a polymer component as defined above and 0-8 wt % additives in a mixer device and mixing the polymer component and additives at elevated temperature such that a polymer melt is obtained; ii) adding 10-70 wt % of a carbon black as defined above to the polymer melt and further mixing of the polymer melt.

Abstract: The present invention relates to a new semiconductive composition, which comprises 50 to 98 weight percentage (wt %) of a polymer blend, 2 to 50 wt % of a conductive filler and 0.05 to 2 wt % of an antioxidant; wherein said polymer blend comprises 10 to 99 wt % of a multimodal high density polyolefin, which high density polyolefin has a density which is from 930 to 970 kg/m3 and a melt flow rate (MFR2@190° C.) according to ISO 1133 (190° C., 2.16 kg) which is less than 1.6 g/10 min, and 1 to 90 wt % of a thermoplastic elastomer, a process for producing a semiconductive composition, and a semiconductive jacket comprising the semiconductive composition, and a power cable comprising the semiconductive jacket or comprising the semiconductive composition, or use of a semiconductive jacket or a semiconductive composition in, for example, a power cable.

Abstract: The invention provides a novel semiconductive polymer composition with improved smoothness and dispersibility of carbon black when compounding the polymer composition and feasible balance with other properties such as volume resistivity. The semiconductive polymer composition comprises (a) from 30 to 90 wt % of a polymer component, (b) from 10 to 70 wt % of carbon black and the carbon black (b) has a mass pellet strength (MPS) according to ASTM D1937-13 of from 50 to 250 N. The invention further relates to a process for preparing the semiconductive polymer composition comprising the steps of: i) introducing 30-90 wt % of a polymer component as defined above and 0-8 wt % additives in a mixer device and mixing the polymer component and additives at elevated temperature such that a polymer melt is obtained; ii) adding 10-70 wt % of a carbon black as defined above to the polymer melt and further mixing of the polymer melt.

Abstract: The present invention relates to a new semiconductive composition, which comprises 50 to 98 weight percentage (wt %) of a polymer blend, 2 to 50 wt % of a conductive filler and 0.05 to 2 wt % of an antioxidant; wherein said polymer blend comprises 10 to 99 wt % of a multimodal high density polyolefin, which high density polyolefin has a density which is from 930 to 970 kg/m3 and a melt flow rate (MFR2@190° C.) according to ISO 1133 (190° C., 2.16 kg) which is less than 1.6 g/10 min, and 1 to 90 wt % of a thermoplastic elastomer, a process for producing a semiconductive composition, and a semiconductive jacket comprising the semiconductive composition, and a power cable comprising the semiconductive jacket or comprising the semiconductive composition, or use of a semiconductive jacket or a semiconductive composition in, for example, a power cable.

Abstract: The present invention relates to a semiconductive polymer composition having easily controllable stripping characteristics, especially for an electric power cable. The semiconductive polymer composition has an ethylene copolymer having polar co-monomer units, wherein the amount of the polar co-monomer units in the ethylene copolymer is 10 wt. % or more, based on the total weight of the ethylene copolymer; an olefin copolymer having propylene monomer units and ethylene monomer units, wherein the olefin copolymer has a melting point of 110° C. or less, and carbon black in an amount of from 10 to 50 wt. %, based on the total weight of the semiconductive polymer composition, wherein the olefin copolymer (B) is prepared by using a metallocene polymerization catalyst.

Abstract: The present invention relates to a semiconductive polymer composition having easily controllable stripping characteristics, especially for an electric power cable. The semiconductive polymer composition has an ethylene copolymer having polar co-monomer units, wherein the amount of the polar co-monomer units in the ethylene copolymer is 10 wt. % or more, based on the total weight of the ethylene copolymer; an olefin copolymer having propylene monomer units and monomer units of an alpha-olefin having at least 4 carbon atoms, wherein the olefin copolymer has a melting point of 110 ° C. or less, and carbon black in an amount of from 10 to 50 wt. %, based on the total weight of the semiconductive polymer composition, wherein the olefin copolymer (B) is prepared by using a metallocene polymerization catalyst.

Abstract: The present invention relates to a cable comprising at least one semiconductive layer and at least one insulation layer, wherein: —the semiconductive layer consists of a composition (A) comprising a polar copolymer (a) and carbon black, and—the insulation layer consists of a composition (B) comprising a polar copolymer (b2), and to a process for the production of such a cable and to the use of such a cable as a power cable.

Abstract: The present invention relates to a semiconductive polymer composition having easily controllable stripping characteristics, especially for an electric power cable. The semiconductive polymer composition comprises an ethylene copolymer comprising polar co-monomer units, wherein the amount of the polar co-monomer units in the ethylene copolymer is 10 wt. % or more, based on the total weight of the ethylene copolymer; an olefin copolymer comprising propylene monomer units and ethylene monomer units, wherein the olefin copolymer has a melting point of 110° C. or less, and carbon black in an amount of from 10 to 50 wt. %, based on the total weight of the semiconductive polymer composition, wherein the olefin copolymer (B) is prepared by using a metallocene polymerisation catalyst. The composition provides improved strippability and mechanical as well as electrical property profile.

Abstract: The present invention relates to a semiconductive polymer composition having easily controllable stripping characteristics, especially for an electric power cable. The semiconductive polymer composition comprises an ethylene copolymer comprising polar co-monomer units, wherein the amount of the polar co-monomer units in the ethylene copolymer is 10 wt. % or more, based on the total weight of the ethylene copolymer; an olefin copolymer comprising propylene monomer units and monomer units of an alpha-olefin having at least 4 carbon atoms, wherein the olefin copolymer has a melting point of 110° C. or less, and carbon black in an amount of from 10 to 50 wt. %, based on the total weight of the semiconductive polymer composition, wherein the olefin copolymer (B) is prepared by using a metallocene polymerisation catalyst. The composition provides improved strippability and enhanced mechanical as well as electrical property profile.

Abstract: The present invention relates to a semiconductive polymer composition comprising an olefin homo- or copolymer wherein the composition has a direct current volume resistivity of less than 1000 Ohm·cm at 90° C., an elongation at break which after aging for 240 hours at 135° C. does not change by more than 25%, and a total number of structures of 20 or less in the SIED test. Furthermore, the present invention relates to an electric power cable comprising a conductor, a semiconducting layer and, adjacent to the semiconducting layer, an insulation layer, wherein the semiconducting layer is formed by said semiconductive polymer composition and to the use of said semiconducting polymer composition for the production of a semiconductive layer of an electric power cable.

Abstract: Insulation layer for cables comprising a heterophasic polymer composition having superior mechanical and electrical properties and being environmentally friendly. The heterophasic polymer composition comprises a polymer matrix and dispersed therein a propylene copolymer having a weight average particle size of less than 1 ?m.

Abstract: The present invention relates to a crosslinkable polymer composition which is useful for the preparation of semiconductive layers of electric cables, the polymer composition comprising (a) an unsaturated polyolefm having at least 0.15 vinyl groups/1000 carbon atoms and (b) carbon black.

Abstract: The present invention relates to a semiconductive polymer composition comprising a olefin homo- or copolymer wherein the composition has a direct current volume resistivity of less than 1000 Ohm.cm at 90 ° C., an elongation at break which after aging for 240 hours at 135 ° C. does not change by more than 25%, and a total number of structures of 20 or less in the SIED test. Furthermore, the present invention relates to an electric power cable comprising a conductor, a semicoducting layer and, adjacent to the semiconducting layer, an insulation layer, wherein the semiconducting layer is formed by said semiconductive polymer composition and to the use of said semiconducting polymer composition for the production of a semiconductive layer of an electric power cable.

Abstract: Insulation layer for cables comprising a heterophasic polymer composition having superior mechanical and electrical properties and being environmentally friendly. The heterophasic polymer composition comprises a polymer matrix and dispersed therein a propylene copolymer having a weight average particle size of less than 1 ?m.