Abstract: In a semiconductor device including a semiconductor body, a continuous oxide layer, a continuous metallization layer, and a diffusion zone, the diffusion zone is located below a portion of the continuous oxide layer to reduce this portion in thickness, and the corresponding part of the metallization layer in the region of the oxide layer portion of reduced thickness forms an undulation which protects the metallization layer against thermal stresses.

Abstract: A monolithically integrated precision reference voltage source by the bandgap principle, suitable for a wide temperature range, is proposed, in which the parabolic course of the temperature response curve of the reference voltage is linearized by process means available in the monolithic integration, dispensing with additional active components such as transistors or diodes. The precision voltage reference source includes two resistors (21, 22), which are represented by the N-doped emitter diffusion zone.

Abstract: The power supply system for a motor vehicle, includes a battery; a three-phase generator; a connecting line connecting the terminals of the generator and the battery; a rectifier connected electrically to the generator; a voltage regulator for switching an exciter field of the generator on and off to control a voltage actual value at the generator terminals and producing an average field current in the exciter field to maintain a power supply voltage substantially constant regardless of load and speed; and a circuit device for determining and for partially compensating an undesirable direct voltage drop at the generator terminals resulting from a voltage drop in the connecting line caused by load current. The device for determining and for partially compensating is structured to determine an alternating voltage at the generator terminals produced by an alternating current component in the connecting line.

Abstract: A voltage regulator (4) for a generator (1), particularly for use in motor vehicles, is provided which produces an average field current in the exciting winding (2) of the generator (1) by switching on and off the field current by a controlled semiconductor switch in cooperation with a recovery diode in such a way that the generator voltage remains approximately constant independently of the load and the speed. The voltage regulator (4) contains an integrally acting component for compensating for load-dependent and speed-dependent errors, which component is produced by a nonlinearly working integrator for the relative turn-on period of the current through the exciting winding (2) and is fed back into the regulating circuit of the voltage regulator (4).

Abstract: A voltage regulator for generators is proposed which, compared with a voltage regulator known, for example, from DE-PS 27 38 897, is supplemented in such a manner that an integral component corresponding to the relative operating time of the field current is formed and this component is fed into the actual control loop. The relative operating time of the field current in this arrangement can be obtained more or less directly from the switching characteristic of the switching transistor (20) for the field current or by means of a sensing resistor (33) in series with the exciter winding (21).

Abstract: A protection device for suppressing higher frequency interference pulses in an input signal for an electric circuit includes a transistor whose emitter is grounded via a current source to act as an emitter follower for an input signal. The voltage drop of the base-emitter diode of the transistor is compensated for by a corresponding voltage drop across a diode whose anode is connected to a voltage supply line via a second current source. A junction point of the second current source and the diode is connected to a capacitor which together with the second current source forms a low-pass member for the input signal. A Schmitt-trigger circuit is connected to the junction point to restore lower frequency input pulses from trapezoidal pulses picked up at the capacitor.

Abstract: A power transistor monolithic integrated structure produced by a bipolar-epitaxial technology includes a plurality of parallel connected transistor cellular structures each containing at least one component transistor. The base of each component transistor is coupled to a common base control conductor via a protective resistor and a fuse link which melts in the event of a defect in the transistor cell. Another fuse link is incorporated in the branch conductors leading from the collectors of respective component transistor to a common conductor web mounted on the surface of the transistor chip. All transistor cellular structures are electrically isolated one from each other during the manufacturing process.

Abstract: A semiconductor means is integrated monolithically on a substrate and comprises at least one power diode (3), its cathode being at a higher potential (6) than the potential (5) of the substrate. Its anode forms the emitter and its cathode forms the base of a parasitic substrate transistor (4). In order to reduce the power loss caused by means of this parasitic substrate transistor (4), means (8) for increasing the collector path resistance (41) of the parasitic transistor (4) are provided.

Abstract: A multiple-cell transistor consists of a parallel connection of individual transistor cells (41, 42) for power distribution. Fuse links (6, 7), which separate the defective transistor cells from the compound in the event of a short circuit, are provided for the purpose of automatically separating defective transistor cells. A voltage-controlled switch (9) is provided for improved separation of the base fuse link (7).

Abstract: A monolithically integrated, polarity-reversal protected switching circuit includes, in the output of a switching stage, a symmetrical thyristor instead of an otherwise customary diode. This thyristor is constituted by an npn transistor and a lateral pnp transistor. The control input of the thyristor is controlled by an additional control arrangement in such a manner that the thyristor is switched off at the occurrence of high voltage peaks. In this manner, there is obtained a relatively inexpensive monolithically integrated switching arrangement which is protected against polarity reversal and withstands voltage pulses of up to 150 volts.

Abstract: The temperature sensing circuit includes a source of constant current I.sub.S, a voltage divider R.sub.1, R.sub.2 and an output transistor T.sub.1 whose base collector circuit is connected parallel to the first resistor and whose base emitter circuit is connected parallel to the second resistor. An auxiliary source of current having a positive temperature coefficient is connected in series with the first resistor of the voltage divider to cause a voltage drop thereon having an opposite temperature coefficient than the output voltage U.sub.S generated at the collector-emitter circuit of the output transistor.

Abstract: To limit the current through the emitter-collector path of an output transistor, typically a Darlington transistor pair (T7, T8) to a load, in case of short circuit or malfunction of the load (L), in which a control circuit path resistor (R1) is serially connected with the emitter-collector path of the output transistor and the load, a reference current source is provided, connected to have current flow additionally through the resistor (R1) and providing control current to the output transistor at a control terminal (2) thereof, thereby permitting self-regulation of output current to a safe level regardless of reflected load resistance.

Abstract: To improve the regulating response of an automotive-type, solid-state voltage regulator and render it essentially immune to ripple while additionally permitting complete integration of the entire voltage regulator without external discrete filter capacitors, a difference amplifier has the output voltage of the on-board vehicle network, for example from an alternator, applied thereto for comparison with a reference, the difference amplifier, respectively, controlling a capacitor charge current supply and a discharge current drain circuit, both connected to a small capacitor in the order of, for example, only 30 pF which, hence, can be integrated, the voltage across the capacitor being sensed in a high-low window or range-type discriminator which has a dual-state output to control conduction or non-conduction of a transistor in series with the field of the alternator in dependence upon whether the voltage across the capacitor, as it is being charged or drained, is above an upper threshold or below a lower thres

Abstract: To provide for uniformity of power dissipation in the components of the switching system, regardless of the duty cycle upon repetitive, cyclical operation, the coupling resistors connected to the driver transistor and to the power transistor are so dimensioned relative to each other, and to the internal resistances of the driver transistor and the power transistor of the system that, in an initial approximation, the dissipation losses arising in the system are independent of the duty cycle of the switching transistor; this is obtained by selecting the sum of the resistance value of the collector resistor for the driver transistor and the base transistor of the power transistor such that (a) when the driver transistor is blocked, current flowing to the base of the power transistor holds the power transistor in full, saturated conduction and (b) the value of the collector resistor for the driver transistor is so selected that, when the driver transistor is conductive, the sum of the dissipated power in the coll

Abstract: A controlled main switch, typically a semiconductor switch, is connected in parallel to the load. In accordance with the invention, an auxiliary switch, typically also a semiconductor switch such as a switching transistor is directly connected across the terminals of the load, and with an impedance, for example a resistance, diode, or Zener diode to the main switch, and controlled to switch in synchronism with the main switch, so that the residual voltage across the load due to inherent voltage drop across the terminals of the switch becomes a minimum. Integrated technology may be used, combining preamplifiers and distribution networks in one monolithic chip.

Abstract: To detect defective elements in a composite semiconductor unit, such as a plurality of transistors, diodes, or the like, connected together to provide desired output levels, the elements are arranged in the unit, for example by providing coupling resistors, or melt positions in the connections to the respective units so that defective elements in the unit can be recognized and isolated from the remaining, non-defective elements in the unit, so that, overall, a semiconductor unit results which is operative and from which defective sub-elements have been, electrically, removed.

Abstract: A controlled main switch, typically a semiconductor switch, is connected in parallel to the load. In accordance with the invention, an auxiliary switch, typically also a semiconductor switch such as a switching transistor is directly connected across the terminals of the load, and with an impedance, for example a resistance, diode, or Zener diode to the main switch, and controlled to switch in synchronism with the main switch, so that the residual voltage across the load due to inherent voltage drop across the terminals of the switch becomes a minimum. Integrated technology may be used, combining preamplifiers and distribution networks in one monolithic chip.