Abstract: Embodiments provide a photodiode having two electrodes and an absorption volume for absorbing photons, wherein the absorption volume has a photon entry area, wherein the two electrodes are configured to generate an electric field in an active region between the two electrodes when a reverse voltage is applied, wherein the electric field runs parallel to the photon entry area, wherein, starting from a surface of a semiconductor substrate of the photodiode, the two electrodes essentially extend orthogonally to the surface in a depth direction of the semiconductor substrate, wherein the photodiode has at least one guard structure formed in the semiconductor substrate that is disposed below at least one of the at least two electrodes.

Abstract: According to a further embodiment, a fluid sensor includes a fluid sensor element with a substrate including a recess for receiving a fluid to be examined, wherein the substrate surrounding the recess is formed, at least in parts, as a substrate electrode, an isolation layer arrangement between a floating gate electrode of a transistor and the substrate electrode and a sensor layer in the recess and adjacent to the floating gate electrode, an additional electrode at an opening area of the recess, wherein the additional electrode is arranged electrically isolated from the sensor layer, the substrate electrode and the floating gate electrode and is connected or connectable to a control potential and a processor configured to provide the control potential at the additional electrode such that an electric field between the additional electrode and the sensor layer is at least reduced or compensated during operation of the fluid sensor.

Abstract: A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

Abstract: According to a further embodiment, a fluid sensor includes a fluid sensor element with a substrate including a recess for receiving a fluid to be examined, wherein the substrate surrounding the recess is formed, at least in parts, as a substrate electrode, an isolation layer arrangement between a floating gate electrode of a transistor and the substrate electrode and a sensor layer in the recess and adjacent to the floating gate electrode, an additional electrode at an opening area of the recess, wherein the additional electrode is arranged electrically isolated from the sensor layer, the substrate electrode and the floating gate electrode and is connected or connectable to a control potential and a processor configured to provide the control potential at the additional electrode such that an electric field between the additional electrode and the sensor layer is at least reduced or compensated during operation of the fluid sensor.

Abstract: A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

Abstract: A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

Abstract: A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

Abstract: In a method of producing a micro-electromechanical element a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. When one of the wafers has been thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity, electronic components are produced in said thinned semiconductor wafer making use of standard semiconductor processes. At least one further intermediate layer between the two semiconductor wafers is provided, which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity.

Abstract: In a method of producing a micromechanical structure for a micro-electromechanical element, a first intermediate layer, which is applied to a first main surface of a first semiconductor wafer, is structured in a first step so as to produce a recess. The first semiconductor wafer is then connected via the first intermediate layer to a second semiconductor wafer in such a way that a hermetically sealed cavity is defined by the recess. Finally, one of the wafers is thinned from a surface facing away from said first intermediate layer so as to produce a diaphragm-like structure on top of the cavity. At least one further intermediate layer is provided between the two semiconductor wavers which, prior to the connection of the two semiconductor wafers, is structured in such a way that the structure formed in said at least one further intermediate layer and the recess in said first intermediate layer define the cavity.

Abstract: The invention relates to a method of producing calibration structures in semiconductor substrates in the manufacture of components, specifically micro-mechanical systems with integrated semiconductor electronic systems. In the method a first layer (3) is structured on a first substrate (4, 5, 6) to produce first areas (2) which are required for the function of the components. Moreover, second areas (1) are produced in the first layer (3), which represent the calibration structures. The second areas (1) present a refractive index different from the refractive index of adjoining areas. Subsequently, the first substrate (4, 5, 6) is joined with a second substrate (12) such that the first layer (3) will be enclosed between the two substrates. Then either the first or the second substrate is thinned down to a residual thickness. The substrate layer with this residual thickness constitutes, for instance, the membrane in a pressure sensor.