Abstract: An opto-electronic semiconductor component having a light transmission or receiving property including a light emitting or detecting active zone lying parallel to the principle surface of the semiconductor crystal is formed so that it detects or emits light directed parallel to the active zone with high efficiency. This enables the component to be hybridize with other electrical, electro-optical or optical elements in a single plane. At least one lateral surface of the semiconductor crystal is inclined at an angle to the principle surface of the component such that light directed into or from the crystal in a direction parallel to the active zone experiences deflection by refraction or reflection toward or away from the active zone.

Abstract: A semiconductor chip (1) is bonded to a substrate (2) serving as a component housing, a contact part, an insulative part or a connecting part without the use of a high-temperature process or any additional bonding medium such as solder or flux. The backside of the semiconductor chip (1) or substrate (2) is structured to include specially formed bumps (3) for the necessary connections. A ductile metal is used for these bumps (3). The bond to the substrate (2) is formed by using pressure and/or ultrasonic energy. The process according to this invention is particularly suitable for bonding components in data link receivers, optoelectronic couplers, transmitters (LEDs, IREDs) and ISDN modules.