Abstract: An IV catheter system may have a catheter component and a needle component. The catheter component may have a catheter hub, a cannula extending distally from the catheter hub, and a push feature extending outward from the catheter hub. The push feature may have an outer surface that receives contact from a digit to move the IV catheter system from an insertion configuration, in which the needle is within the cannula, to a fluid delivery configuration, in which the needle is outside the catheter hub. The needle component may have a needle hub and a needle extending distally from the needle hub along an axis. The push feature may be formed of a flexible material that causes the push feature, in response to pressure exerted on the outer surface by a dressing securing the catheter component to a patient, to deflect the outer surface toward the cannula axis.

Abstract: A compound of the general formula (1). The compound of formula (1) is suitable for use in a method for treating a disorder relating to the binding of a galectin, such as galectin-3 to a ligand in a mammal, such as a human. Also, a method for treatment of a disorder relating to the binding of a galectin, such as galectin-3 to a ligand in a mammal, such as a human.

Abstract: Provided herein are compounds of the formula (I): as well as pharmaceutically acceptable salts thereof, wherein the substituents are as those disclosed in the specification. These compounds, and the pharmaceutical compositions containing them, promote mitochondrial biogenesis and are useful for the treatment of, for example, acute kidney injury and chronic kidney disease.

Abstract: A sawmill includes a saw carriage and a swing saw which in turn has a circular blade and a drive shaft. The mill also includes a pair of ground engaging tracks. The saw carriage has a pair of posts/uprights each supporting an opposite end of a cross-frame, which incorporates a clamp at each end, and these can be tightened against one of the posts to stabilise the saw carriage. The saw cantilevers from the saw carriage such that the saw's drive shaft is to one side of the cross-frame regardless of whether the blade is in a vertical or horizontal cutting orientation. The carriage moves along the tracks to carry the saw to make cuts in the longitudinal dimension of a log. The saw is also arranged to move laterally along the carriage between the uprights to make cuts the lateral dimension of the log.

Abstract: Provided herein are compounds of the formula (I): as well as pharmaceutically acceptable salts thereof, wherein the substituents are as those disclosed in the specification. These compounds, and the pharmaceutical compositions containing them, promote mitochondrial biogenesis and are useful for the treatment of, for example, acute kidney injury and chronic kidney disease.

Abstract: Provided herein are compounds of the formula (I): as well as pharmaceutically acceptable salts thereof, wherein the substituents are as those disclosed in the specification. These compounds, and the pharmaceutical compositions containing them, promote mitochondrial biogenesis and are useful for the treatment of, for example, acute kidney injury and chronic kidney disease.

Abstract: Provided herein are compounds of the formula (I): as well as pharmaceutically acceptable salts thereof, wherein the substituents are as those disclosed in the specification. These compounds, and the pharmaceutical compositions containing them, promote mitochondrial biogenesis and are useful for the treatment of, for example, acute kidney injury and chronic kidney disease.

Abstract: Provided herein are compounds of the formula (I) as well as pharmaceutically acceptable salts thereof, wherein the substituents are as those disclosed in the specification. These compounds, and the pharmaceutical compositions containing them, are useful for the treatment of degenerative diseases and disorders.

Abstract: A patch panel includes a back plane having front mounted pairs of termination locations, and an interconnect location electrically connected to each pair of termination locations. The termination locations connect to two patch cords. The interconnect location defines an access device for selectively accessing the termination locations. An interconnect module interfaces with the interconnect location. The module can include test access, power over Ethernet, or circuit protection features.

Abstract: A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.

Abstract: A process uses pressure changes and a pressure compensation factor to estimate the rate at which neutral atoms are implanted. While implanting a first wafer using a first pressure compensation factor, the rate at which ions are implanted is determined. The first wafer is moved radially with respect to an ion beam while implanting ions into the first wafer so as to achieve a uniform total dose based on the rate at which ions are implanted and the estimated rate at which neutral atoms are implanted. The pressure is determined while implanting the first wafer, determining the pressure. A second pressure compensation factor is selected, that would have achieved a uniform rate of implanted ions plus implanted neutral atoms across a surface of the first wafer. The second pressure compensation factor is different from the first pressure compensation factor. The second pressure compensation factor is used to implant a second wafer. The second wafer is tested by forming a sheet resistance contour map.

Abstract: A patch panel includes a back plane having front mounted pairs of termination locations, and an interconnect location electrically connected to each pair of termination locations. The termination locations connect to two patch cords. The interconnect location defines an access device for selectively accessing the termination locations. An interconnect module interfaces with the interconnect location. The module can include test access, power over Ethernet, or circuit protection features.

Abstract: A sawmill having a saw blade 11 which can move between a substantially horizontal cutting position and a substantially vertical cutting position, the sawmill having a control arm 14 which operates to move the blade between the substantially horizontal and vertical cutting positions, the control arm 14 being mounted for pivotal movement about an axis 15, there being an operating means 18 which acts against the control arm in a substantially linear manner, wherein movement of the operating means causes the control 14 arm to pivot about the axis 15 and move the blade 11 between the cutting positions. The sawmill may a deflector in the form of a flap mounted adjacent the blade to deflect a cut board from the log as the next board is being cut.

Abstract: A process uses pressure changes and a pressure compensation factor to estimate the rate at which neutral atoms are implanted. While implanting a first wafer using a first pressure compensation factor, the rate at which ions are implanted is determined. The first wafer is moved radially with respect to an ion beam while implanting ions into the first wafer so as to achieve a uniform total dose based on the rate at which ions are implanted and the estimated rate at which neutral atoms are implanted. The pressure is determined while implanting the first wafer, determining the pressure. A second pressure compensation factor is selected, that would have achieved a uniform rate of implanted ions plus implanted neutral atoms across a surface of the first wafer. The second pressure compensation factor is different from the first pressure compensation factor. The second pressure compensation factor is used to implant a second wafer. The second wafer is tested by forming a sheet resistance contour map.

Abstract: A device to implant impurities into a semiconductor wafer has a process chamber having a wall, a pressure compensation unit, a disk to support a plurality of semiconductor wafers within the process chamber. The disk has a radially extending slot arranged among the wafers. A beam gun is positioned within the process chamber to shoot an ion beam at the semiconductor wafers. A cryo pump minimizes the pressure within the process chamber. A first ion gauge is positioned between the process chamber and the cryo pump. A second ion gauge extends through the wall of the process chamber. A switching device selectively connects the first or second ion gauge to the pressure compensation unit. A faraday receives ions from the ion gun filter after the ions travel through the slot in the disk. A current meter counts the number of electrons flowing to the disk faraday to neutralize the ions.

Abstract: A device to implant impurities into a semiconductor wafer had a beam gun to shoot ions at a semiconductor wafer, a pair of ion gauges, and ion gauge controller to supply power to, and obtain information corresponding to a number of ions from, one of the ion gauges. The gauge controller has a parameter output, a control output and a pair of control inputs respectively associated with the pair of ion gauges, such that when a control signal is supplied to one of the control inputs, the ion gauge controller supplies power to, and obtains information corresponding to a number of ions from, the respectively associated ion gauge. The control output produces the control signal when either of the ion gauges is activated. The parameter output selectively produces a parameter signal based on a recipe selection. A first delay circuit connects the control output to one of the control inputs, after a delay, when the parameter output is on.

Abstract: A method and apparatus for utilizing mip maps in a video graphics system begins by setting a dynamically configurable level of detail bias that is used to select between potential mip maps. The level of detail bias is set based on the screen resolution. The selection of the mip map, or mip maps, utilized for texturing operations with respect to a particular pixel is performed based on the configurable level of detail bias and the texel-per-pixel ratio between the potential mip maps and the particular pixel to be textured. The dynamic configuration of the level of detail bias allows texture detail to be maintained across multiple display resolutions.