Abstract: A silicon membrane pressure sensor which has a carrier chip and a membrane chip 3 for which overload protection is desired to protect against the pressure on the front side of the membrane. An overload member 7 is mounted between the carrier chip 2 and the membrane chip 3 such that the overload member is connected to the membrane chip at a middle island portion 5 of the membrane chip 3 and with a first distance D1 from the carrier chip 2 in the non-loaded condition such that when pressure occurs the overload member will remove the load on the membrane chip.

Abstract: In a chip carrier for microwave components with an electrically conductive support and with a dielectric substrate, the electrical leads should be able to be impedance-matched in a simple manner. Such a chip carrier should be easy to insert in a microwave circuit and should have a simple construction. A recess (3) in the dielectric substrate (1) is in shape and size to the microwave component(s) to be mounted. The dielectric substrate (1) rests on the electrically conductive support (2). At least one microwave semiconductor component (4) is inserted in the recess (3) of the dielectric substrate (1). The ground terminals (11) of the microwave semiconductor component (4) are connected with the support (2) inside the recess (3). In the connection surface between the dielectric substrate (1) and support (2), the substrate (1) protrudes beyond the support (2).

Abstract: A method is disclosed for the production of n-doped silicon single crystals, each having a dish-shaped specific electrical resistance profile in a radial direction about a central axis of the crystal. A silicon single crystal is exposed to a pattern of radiation with neutrons according to the reaction 30.sub.Si (n,.gamma.) 31.sub.Si .sup..beta.-.fwdarw. 31.sub.P. The neutron radiation causes a weaker doping concentration in marginal regions of the crystals due to the production of fewer phosphorus atoms. Either p-conductive silicon crystals or n-conductive silicon crystals may be utilized as an initial material for exposure to the neutron radiation.

Abstract: A semiconductor component having a semiconductor body having at least two zones of alternate opposite conductivity type in which the concentration of introduced recombination centers is varied between the anode side and the cathode side in such a way that the profile of the recombination centers is not symmetrical. A thyristor is disclosed in which at least the outer anode-side region of the central zone is divided into surface elements having differing levels of concentration of recombination centers, and in which the ratio of the surface elements is set to be such that in the central region the mean value of the concentration of the recombination centers is higher than the cathode-side mean value. Gettering layers are provided which produce this result. Surface elements are provided in the semiconductor body which alter the concentration of recombination centers. The ratio of the areas of the surface elements having a high concentration to those having a low concentration should lie between 0.9:0.1 and 0.