Abstract: An electrophoretic medium (100) comprises at least one type of particle (108) suspended in a suspending fluid (106) and capable of moving therethrough on application of an electric field to the medium, the particles (108) including at least one electrophoretically mobile specularly reflective particle.

Abstract: A thin-film transistor array comprises at least first and second transistors. Each of the first and second transistors include a shared silicon layer, i.e., an active layer. The shared semiconductor layer extends continuously between the first and second transistors, and includes a concentration of dopant that increases a resistivity of the semiconductor layer and reduces a leakage current through the semiconductor layer while permitting functioning of the transistor array.

Abstract: A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors.

Abstract: A frontlighting illumination system for selectively illuminating a nonemissive electronic display includes display elements in communication with at least one light source. The electronic display includes a nonemissive electro-optic medium; and a light transmissive element. Light transmitted through the light transmissive element illuminates the display medium. The propagation of light that is directed through the light transmissive element towards the microencapsulated electrophoretic display medium is substantially undeflected at the interface between the surface of the light transmissive element and the microencapsulated electrophoretic display medium. A reflector is included for directing light from the light source through the light transmissive element.

Abstract: A thin-film transistor includes a gate electrode having a first gate electrode edge and a second gate electrode edge opposite the first gate electrode edge. The TFT also includes a drain electrode having a first drain electrode edge that overlaps the first gate electrode edge, and a second drain electrode edge that overlaps the second gate electrode edge. A method for fabricating a diode array for use in a display includes deposition of a conductive layer adjacent to a substrate, deposition of a doped semiconductor layer adjacent to the substrate, and deposition of an undoped semiconductor layer adjacent to the substrate. A display pixel unit provides reduced capacitative coupling between a pixel electrode and a source line. The unit includes a transistor, the pixel electrode, and the source line. The source line includes an extension that provides a source for the transistor. A patterned conductive portion is disposed adjacent to the source line.

Abstract: The invention relates to electro-optic displays and methods for driving such displays. The invention provides (i) electrochromic displays with solid charge transport layers; (ii) apparatus and methods for improving the contrast and reducing the cost of electrochromic displays; (iii) apparatus and methods for sealing electrochromic displays from the outside environment and preventing ingress of contaminants into such a display; and (iv) methods for adjusting the driving of electro-optic displays to allow for environmental and operating parameters.

Abstract: A transistor having a channel width, W, and a channel length, L, defined by non-rectangular electrodes. The transistor is a thin film field effect transistor having an insulated gate electrode. One of a source and drain electrodes is connected to a display electrode and one is connected to a data line. The source and drain electrodes can be interdigitated to provide a desired W/L ratio. The gate is connected to a select line. An overlap region between a display electrode and a select line for another pixel defines a capacitor. The transistor is fabricated to be situated behind the display electrode so as to maximize an aperture ratio. The design enables the use of conventional printing methods, such as screen printing, ink jet printing, printing through a stencil, flexo-gravure printing and offset printing.

Abstract: A bistable electro-optic display has a plurality of pixels, each of which is capable of displaying at least three gray levels. The display is driven by a method comprising: storing a look-up table containing data representing the impulses necessary to convert an initial gray level to a final gray level; storing data representing at least an initial state of each pixel of the display; receiving an input signal representing a desired final state of at least one pixel of the display; and generating an output signal representing the impulse necessary to convert the initial state of said one pixel to the desired final state thereof, as determined from said look-up table. The invention also provides a method for reducing the remnant voltage of an electro-optic display.

Abstract: An encapsulated electrophoretic display having a plurality of non-spherical capsules disposed substantially in a single layer on a substrate.

Abstract: The invention relates to poly(phenylene vinylene) polymers substituted with dendritic sidechains to enhance main-chain separation in the solid state. The polymers are synthesized by the Heck polymerization and have a weight-average molecular weight of 20,000 to 60,000 Daltons. The polymers are self-ordering in the solid state and have thermotropic liquid crystalline phases. The polymers show enhanced photoconductivity, better charge transport capability and improved polarized light emission.

Abstract: A transistor having a channel width, W, and a channel length, L, defined by non-rectangular electrodes. The transistor is a thin film field effect transistor having an insulated gate electrode. One of a source and drain electrodes is connected to a display electrode and one is connected to a data line. The source and drain electrodes can be interdigitated to provide a desired W/L ratio. The gate is connected to a select line. An overlap region between a display electrode and a select line for another pixel defines a capacitor. The transistor is fabricated to be situated behind the display electrode so as to maximize an aperture ratio. The design enables the use of conventional printing methods, such as screen printing, ink jet printing, printing through a stencil, flexo-gravure printing and offset printing.

Abstract: The invention provides a first process for addressing an electro-optic material having first and second display states differing in at least one optical characteristic and being capable of being changed from its first to its second display state by application of an electric field to the material, the process comprising applying an electrically charged fluid to a portion of at least one surface of the material, thereby changing the display state of a portion of the material. The invention also provides a second process for addressing an electro-optic material, this process comprising contacting the electro-optic material with a non-conductive brush means wet with a conductive liquid while applying a potential difference between the brush means and the electro-optic material.

Abstract: Improvements and modifications are provided in the type of frustrated total internal reflection electrophoretic systems described in U.S. Pat. No. 6,215,920.

Abstract: Systems and methods for producing thin film transistor structures useful in controlling electronic displays. Thin film transistors are fabricated using all-additive methods including printing techniques, soft lithography and material deposition methods. The thin film transistors can be deposited with the gate on the bottom or on the top of the structure. The deposition methods include the possibility of isolating nearly completely the transistor structure from the electronic display devices, so as to minimize or eliminate deleterious interactions therebetween.

Abstract: An electro-optic display comprises first and second substrates and a lamination adhesive layer and a layer of a solid electro-optic material disposed between the first and second substrates, the lamination adhesive layer having a volume resistivity, measured at 10° C., which does not change by a factor of more than about 3 after being held at 25° C. and 45 percent relative humidity for 1000 hours. The electro-optic material is preferably an encapsulated electrophoretic material. Other desirable characteristics of lamination adhesives for use in electro-optic displays are also described.

Abstract: The invention relates to poly(phenylene vinylene) polymers substituted with dendritic sidechains to enhance main-chain separation in the solid state. The polymers are synthesized by the Heck polymerization and have a weight-average molecular weight of 20,000 to 60,000 Daltons. The polymers are self-ordering in the solid state and have thermotropic liquid crystalline phases. The polymers show enhanced photoconductivity, better charge transport capability and improved polarized light emission.

Abstract: Systems and methods for producing thin film transistor structures useful in controlling electronic displays. Thin film transistors are fabricated using all-additive methods including printing techniques, soft lithography and material deposition methods. The thin film transistors can be deposited with the gate on the bottom or on the top of the structure. The deposition methods include the possibility of isolating nearly completely the transistor structure from the electronic display devices, so as to minimize or eliminate deleterious interactions therebetween.

Abstract: A thin-film transistor array comprises at least first and second transistors. Each of the first and second transistors include a shared silicon layer, i.e., an active layer. The shared semiconductor layer extends continuously between the first and second transistors, and includes a concentration of dopant that increases a resistivity of the semiconductor layer and reduces a leakage current through the semiconductor layer while permitting functioning of the transistor array.

Abstract: Systems and methods for producing thin film transistor structures useful in controlling electronic displays. Thin film transistors are fabricated using all-additive methods including printing techniques, soft lithography and material deposition methods. The thin film transistors can be deposited with the gate on the bottom or on the top of the structure. The deposition methods include the possibility of isolating nearly completely the transistor structure from the electronic display devices, so as to minimize or eliminate deleterious interactions therebetween.

Abstract: Embodiments of the invention include an optical system apparatus and method for modulating the strength of a grating such as a long period grating (LPG) within optical systems and devices by varying the light transmission and loss characteristics of the cladding mode, rather than varying the effective refractive index of the fiber layers. According to embodiments of the invention, the use of a light-scattering or light absorptive material in the cladding of the optical fiber or other optical energy transmission medium causes the cladding to switch between a first state that effectively allows coherent coupling of cladding modes and a second state that effectively prevents coherent coupling of cladding modes.