Abstract: A voltage detector including a voltage following circuit connected to a power supply and operable to follow a voltage value of the power supply, a selectable threshold point circuit connected to the voltage following circuit and operable to select one of a plurality of values for a threshold point of the power supply, and a switch circuit coupled to the selectable threshold point circuit and the voltage following circuit, the switch circuit cooperating with the selectable threshold point circuit to generate an output indicating whether the value of the power supply has increased above or decreased below the selected value for the threshold point in response to the followed value of the power supply.

Abstract: A low read current, low power consumption sense amplifier well suited for low frequency RFID systems is disclosed. An MOS transistor receives the read current from a memory cell, typically an EEPROM, and a current mirror is formed by a parallel MOS transistor. The mirror current is integrated on a capacitor after the charge on the capacitor is cleared via a reset pulse. A time period is defined during which the voltage on the capacitor is compared to a second voltage. The second voltage is formed from a reference voltage or from dummy cells, in either case the reference voltage is at about the logic boundary between a one and zero stored in a memory cell. A comparator, with or without input hysteresis, receives the voltage on the capacitor and a second voltage and within the time period, the output state of the comparator indicates the binary contents of the memory cell.

Abstract: A low read current, low power consumption sense amplifier well suited for low frequency RFID systems is disclosed. An MOS transistor receives the read current from a memory cell, typically an EEPROM, and a current mirror is formed by a parallel MOS transistor. The mirror current is integrated on a capacitor after the charge on the capacitor is cleared via a reset pulse. A time period is defined during which the voltage on the capacitor is compared to a second voltage. The second voltage is formed from a reference voltage or from dummy cells, in either case the reference voltage is at about the logic boundary between a one and zero stored in a memory cell. A comparator, with or without input hysteresis, receives the voltage on the capacitor and a second voltage and within the time period, the output state of the comparator indicates the binary contents of the memory cell.

Abstract: A non-volatile latch circuit that has minimal control circuitry is disclosed. The non-volatile latch circuit is typically used in applications where only several bits of data need to be stored in non-volatile memory. The non-volatile latch circuit can be programmed and read using three control signals: a programming voltage/supply voltage signal, a data in signal, and a read/{overscore (write)} signal. By using fewer control signals, the number of transistors used to implement the control circuitry within the non-volatile latch circuit is reduced and thus the non-volatile latch circuit consumes less chip area/volume on an integrated circuit device.

Abstract: A charge pump system, including a charge pump and associated distributed clock generation circuitry, is provided for generating high voltages from a low initial voltage in applications such as erasing and programming electrically erasable programmable read only memory (EEPROM) arrays. The charge pump system uses a power supply voltage and a clock and includes a first phase bootstrapping circuit, an inverter, and a second phase bootstrapping circuit, and a two-stage charge pump. The two phase bootstrapping circuits are both responsive to the clock and use a distributed bootstrapping scheme to provide first and second phase clock signals with fixed multiples of the power supply voltage in order to overcome increased effective transistor threshold voltages, increase efficiency, and allow for charge boosting in a limited number of stages. The inverter is connected to the second phase bootstrapping circuit, causing the second phase clock signal to be opposite in phase from the first clock signal.

Abstract: A charge pump system and associated variable-amplitude clock generation circuitry are provided for generating high voltages from a low initial voltage in applications such as erasing and programming electrically erasable programmable read only memory (EEPROM) arrays. The charge pump system uses a power supply voltage and a clock and includes a first phase bootstrapping circuit, an inverter, and a second phase bootstrapping circuit, and charge pump circuitry. The two phase bootstrapping circuits are both responsive to the clock and provide first and second phase clock signals. The inverter is connected to the second phase bootstrapping circuit, causing the second phase clock signal to be opposite in phase from the first clock signal. The charge pump circuitry is responsive to the power supply voltage and the first and second phase clocks and uses native transistors that have lower threshold voltages.

Abstract: A portable computing device with a microcomputer, a first display, a magnifying optical element through which the first display is viewed to provide a user with an enlarged virtual display, a first input device to communicate with the first display, a second direct display, and a second input device that can be a keyboard such that the second display can interact with the keyboard to display alphanumeric and other symbols so the user can see what is being typed. The second display is directly viewed and is configured to display the same data being entered in the selected field of the first display. Typically, the first display is a liquid crystal color display, capable of displaying a full range of text and graphic images such as can displayed on a conventional computer monitor. A virtual image of the first display is viewed by holding the lens close to an eye. To a user, the virtual image appears as large a real display provided on a conventional desktop or laptop.

Abstract: A charge pump system includes a charge pumping circuit for outputting a high voltage VPP at a node. An oscillator circuit, coupled to the charge pumping circuit, drives the charge pumping circuit with at least one clock signal. A current source generates a pulldown current. A voltage divider circuit is coupled between the node and the current source. The voltage divider circuit cooperates with the current source to form a feedback loop for controlling the oscillator circuit to run at variable, optimum frequency for controlling the rate-of-rise and the amplitude of the high voltage VPP while minimizing power-supply current drain.

Abstract: A charge pump system, including a charge pump and associated distributed clock generation circuitry, is provided for generating high voltages from a low initial voltage in applications such as erasing and programming electrically erasable programmable read only memory (EEPROM) arrays. The charge pump system uses a power supply voltage and a clock and includes a first phase bootstrapping circuit, an inverter, and a second phase bootstrapping circuit, and a two-stage charge pump. The two phase bootstrapping circuits are both responsive to the clock and use a distributed bootstrapping scheme to provide first and second phase clock signals with fixed multiples of the power supply voltage in order to overcome increased effective transistor threshold voltages, increase efficiency, and allow for charge boosting in a limited number of stages. The inverter is connected to the second phase bootstrapping circuit, causing the second phase clock signal to be opposite in phase from the first clock signal.

Abstract: A charge pump system includes a charge pumping circuit for outputting a high voltage VPP at a node. An oscillator circuit, coupled to the charge pumping circuit, drives the charge pumping circuit with at least one clock signal. A current source generates a pulldown current. A voltage divider circuit is coupled between the node and the current source. The voltage divider circuit cooperates with the current source to form a feedback loop for controlling the oscillator circuit to run at variable, optimum frequency for controlling the rate-of-rise and the amplitude of the high voltage VPP while minimizing power-supply current drain.

Abstract: A charge pump system, including a charge pump and associated distributed clock generation circuitry, is provided for generating high voltages from a low initial voltage in applications such as erasing and programming electrically erasable programmable read only memory (EEPROM) arrays. The charge pump system uses a power supply voltage and a clock and includes a first phase bootstrapping circuit, an inverter, and a second phase bootstrapping circuit, and a two-stage charge pump. The two phase bootstrapping circuits are both responsive to the clock and use a distributed bootstrapping scheme to provide first and second phase clock signals with fixed multiples of the power supply voltage in order to overcome increased effective transistor threshold voltages, increase efficiency, and allow for charge boosting in a limited number of stages. The inverter is connected to the second phase bootstrapping circuit, causing the second phase clock signal to be opposite in phase from the first clock signal.

Abstract: A charge pump system and associated variable-amplitude clock generation circuitry are provided for generating high voltages from a low initial voltage in applications such as erasing and programming electrically erasable programmable read only memory (EEPROM) arrays. The charge pump system uses a power supply voltage and a clock and includes a first phase bootstrapping circuit, an inverter, and a second phase bootstrapping circuit, and charge pump circuitry. The two phase bootstrapping circuits are both responsive to the clock and provide first and second phase clock signals. The inverter is connected to the second phase bootstrapping circuit, causing the second phase clock signal to be opposite in phase from the first clock signal. The charge pump circuitry is responsive to the power supply voltage and the first and second phase clocks and uses native transistors that have lower threshold voltages.

Abstract: A charge pump system and associated variable-amplitude clock generation circuitry are provided for generating high voltages from a low initial voltage in applications such as erasing and programming electrically erasable programmable read only memory (EEPROM) arrays. The charge pump system uses a power supply voltage and a clock and includes a first phase bootstrapping circuit, an inverter, and a second phase bootstrapping circuit, and charge pump circuitry. The two phase bootstrapping circuits are both responsive to the clock and provide first and second phase clock signals. The inverter is connected to the second phase bootstrapping circuit, causing the second phase clock signal to be opposite in phase from the first clock signal. The charge pump circuitry is responsive to the power supply voltage and the first and second phase clocks and uses native transistors that have lower threshold voltages.

Abstract: In accordance with the present invention a mode select circuit includes a bias circuit and a voltage level encoder. The mode select circuit further includes a mode select terminal capable of being selectively coupled to one or more of a plurality of configuration elements to bias the mode select terminal to one of a plurality of predesignated voltages. The bias circuit is coupled to the mode select terminal for biasing the terminal to one of the predesignated voltages when the mode select terminal is not coupled to any of the configuration elements. The voltage level encoder is coupled to the mode select terminal for providing one of a plurality of voltage level codes on a plurality of voltage level encoder output terminals in response to the mode select terminal being biased to a corresponding one of the plurality of predesignated voltages.

Abstract: An integrated circuit memory includes a plurality of memory cells for storing a data word. A lock bit cell is coupled to the memory cells. The lock bit cell stores a lock bit associated with the data word. The lock bit can be set to a locked state to prevent overwriting of the data word.

Abstract: A charge pump system includes a charge pumping circuit for outputting a high voltage Vpp at a node. An oscillator circuit, coupled to the charge pumping circuit, drives the charge pumping circuit with at least one clock signal. A current source generates a pulldown current. A voltage divider circuit is coupled between the node and the current source. The voltage divider circuit cooperates with the current source to form a feedback loop for controlling the oscillator circuit to run at variable, optimum frequency for controlling the rate-of-rise and the amplitude of the high voltage Vpp while minimizing power-supply current drain.

Abstract: A charge pump system includes a charge pumping circuit for outputting a high voltage VPP at a node. An oscillator circuit, coupled to the charge pumping circuit, drives the charge pumping circuit with at least one clock signal. A current source generates a pulldown current. A voltage divider circuit is coupled between the node and the current source. The voltage divider circuit cooperates with the current source to form a feedback loop for controlling the oscillator circuit to run at variable, optimum frequency for controlling the rate-of-rise and the amplitude of the high voltage VPP while minimizing power-supply current drain.

Abstract: A charge pump system includes a charge pumping circuit for outputting a high voltage VPP at a node. An oscillator circuit, coupled to the charge pumping circuit, drives the charge pumping circuit with at least one clock signal. A current source generates a pulldown current. A voltage divider circuit is coupled between the node and the current source. The voltage divider circuit cooperates with the current source to form a feedback loop for controlling the oscillator circuit to run at variable, optimum frequency for controlling the rate-of-rise and the amplitude of the high voltage VPP while minimizing power-supply current drain.

Abstract: A method and circuits for generating a start-up signal to force a bistable reference circuit into a conducting state. The start-up signal ensures that the reference circuit operates to provide a desired output signal when power is applied. The start-up signal is self-generated and self-canceled, rather than relying on an externally supplied pulse, and is input to the reference circuit via a hysteresis circuit (e.g., Schmitt inverter).

Abstract: A voltage regulator for coupling to an unregulated power source and regulating a voltage and conveying a current received from such source includes a bias voltage generator and a voltage translator which together dissipate virtually zero power while providing such voltage regulation and current conveyance. The bias voltage generator produces a stable reference current for purposes of generating stable bias voltages for the voltage translator. The voltage translator generates a regulated output voltage by translating a reference voltage potential (e.g., circuit ground) upwards by an amount equal to multiple depletion mode transistor threshold voltages.