Abstract: A method and circuit for implementing an embedded dynamic random access memory (eDRAM), and a design structure on which the subject circuit resides are provided. The embedded dynamic random access memory (eDRAM) circuit includes a stacked field effect transistor (FET) and capacitor. The capacitor is fabricated directly on top of the FET to build the eDRAM.

Abstract: A method and circuit for implementing an embedded dynamic random access memory (eDRAM), and a design structure on which the subject circuit resides are provided. The embedded dynamic random access memory (eDRAM) circuit includes a stacked field effect transistor (FET) and capacitor. The capacitor is fabricated directly on top of the FET to build the eDRAM.

Abstract: A method and an eFuse programming circuit for implementing resistance determination of an eFuse before initiating eFuse blow, and a design structure on which the subject circuit resides are provided. An eFuse on a chip is used to set current flow through a known resistor and measure the eFuse resistance. An applied voltage to program selected eFuses on the chip is selected responsive to an identified eFuse voltage value.

Abstract: A method and an eFuse programming circuit for implementing resistance determination of an eFuse before initiating eFuse blow, and a design structure on which the subject circuit resides are provided. An eFuse on a chip is used to set current flow through a known resistor and measure the eFuse resistance. An applied voltage to program selected eFuses on the chip is selected responsive to an identified eFuse voltage value.

Abstract: A FinFET body contact structure and a method for creating the FinFET body contact structure are disclosed. The body contact structure comprises a wide fin portion of a semiconductor fin, the wide fin portion having a polysilicon polygon shape formed on a top surface of the wide fin portion. The polysilicon polygon shape has a center area having no polysilicon. FinFETs are formed on two vertical surfaces of the wide fin portion and gates of the FinFETs are coupled to the polysilicon polygon shape. Top surfaces of the wide fin portion and the polysilicon polygon shape are silicided. Silicide bridging is prevented by sidewall spacers. All convex angles on the polysilicon polygon shape are obtuse enough to prevent creation of bridging vertices. The center area is doped of an opposite type from a source and a drain of an associated FinFET.

Abstract: An apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area. The apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area comprises the silicon area, and a plurality of polysilicon shapes each having a unique orientation relative to the silicon area wherein each of the polysilicon shapes is formed having an angle less than or equal to a critical angle. The critical angle is an angle at or below which a sidewall spacer no longer is formed on a polysilicon shape, thereby causing the polysilicon shape to short circuit to an underlying portion of the silicon area by way of a silicide bridge.

Abstract: A method is disclosed for measuring alignment of polysilicon shapes relative to a silicon area wherein the presence of an electrical coupling is used to determine the presence of bias or misalignment. Bridging vertices on the polysilicon shapes are formed. Bridging vertices over the silicon area create low resistance connections between those bridging vertices and the silicon area; other bridging vertices over ROX (recessed oxide) areas do not create low resistance connections between those other bridging vertices and the silicon area. Determining which bridging vertices have low resistance connections to the silicon area and how many bridging vertices have low resistance connections to the silicon area are used to determine the bias and misalignment of the polysilicon shapes relative to the silicon area.

Abstract: An apparatus and method are disclosed for measuring bias of polysilicon shapes relative to a silicon area wherein the presence of an electrical coupling is used to determine the presence of bias. Bridging vertices on the polysilicon shapes are formed. Bridging vertices over the silicon area create low resistance connections between those bridging vertices and the silicon area; other bridging vertices over ROX (recessed oxide) areas do not create low resistance connections between those other bridging vertices and the silicon area. Determining which bridging vertices have low resistance connections to the silicon area and how many bridging vertices have low resistance connections to the silicon area are used to determine the bias of the polysilicon shapes relative to the silicon area.

Abstract: A FinFET body contact structure and a method for creating the FinFET body contact structure are disclosed. The body contact structure comprises a wide fin portion of a semiconductor fin, the wide fin portion having a polysilicon polygon shape formed on a top surface of the wide fin portion. The polysilicon polygon shape has a center area having no polysilicon. FinFETs are formed on two vertical surfaces of the wide fin portion and gates of the FinFETs are coupled to the polysilicon polygon shape. Top surfaces of the wide fin portion and the polysilicon polygon shape are silicided. Silicide bridging is prevented by sidewall spacers. All convex angles on the polysilicon polygon shape are obtuse enough to prevent creation of bridging vertices. The center area is doped of an opposite type from a source and a drain of an associated FinFET.

Abstract: An apparatus for measuring alignment of polysilicon shapes to a silicon area. Each polysilicon shape in a first plurality of polysilicon shapes has a bridging vertex positioned near the silicon area. Each polysilicon shape in a second plurality of polysilicon shapes has a bridging vertex positioned near the silicon area. The second plurality of silicon shapes is positioned on the opposite side of the silicon area from the first plurality of silicon shapes. An electrical measurement of how many of the polysilicon shapes in the first plurality of polysilicon shapes and in the second plurality of polysilicon shapes provides a measurement of alignment of the polysilicon shapes and the silicon area.

Abstract: A method for making a magnetic disk, without chemical mechanical polishing to remove asperities, includes the steps of placing an annular-shaped element in a vacuum chamber, exposing a surface of the element to a beam of gas clusters while it is in the vacuum chamber, and thereafter applying a magnetic coating. The annular-shaped element may be a substrate, or it may be a substrate with a base coating such as glassy carbon or amorphous carbon. The substrate may be made of glass, preferably high quality fusion glass. The surface of the annular element may be textured by forming a sequence of concentric annular valleys, with plateaus being left between the valleys, before the magnetic coating is applied. A semiconductor wafer may also be smoothed by a beam of gas clusters to prepare the wafer for photolithography.

Abstract: A method for making a magnetic disk, without chemical mechanical polishing to remove asperities, includes the steps of placing an annular-shaped element in a vacuum chamber, exposing a surface of the element to a beam of gas clusters while it is in the vacuum chamber, and thereafter applying a magnetic coating. The annular-shaped element may be a substrate, or it may be a substrate with a base coating such as glassy carbon or amorphous carbon. The substrate may be made of glass, preferably high quality fusion glass. The surface of the annular element may be textured by forming a sequence of concentric annular valleys, with plateaus being left between the valleys, before the magnetic coating is applied. A semiconductor wafer may also be smoothed by a beam of gas clusters to prepare the wafer for photolithography.

Abstract: A fluid jet cutting method and apparatus for cutting an object from a sheet. In one embodiment, a fluid jet stream is directed against a glass sheet to cut an annular disk substrate for use in a data storage device. The sheet is supported by first, second and third support members. The support surfaces of the second and third support members are respectively positioned inside central openings in the first and second support members. A vacuum pulls the sheet against the support surface of at least the second support member. Preferably, plural central openings in the first support member accommodate plural second and third support members, whereby plural substrates are cut from the sheet. The sheet preferably includes plural layers removably adhered to one another, whereby plural substrates are simultaneously formed by a single fluid jet stream. A protective layer may cover at least one surface to the sheet.

Abstract: A fluid jet cutting method and apparatus for cutting an object from a sheet. In one embodiment, a fluid jet stream is directed against a glass sheet to cut an annular disk substrate for use in a data storage device. The sheet is supported by first, second and third support members. The support surfaces of the second and third support members are respectively positioned inside central openings in the first and second support members. A vacuum pulls the sheet against the support surface of at least the second support member. Preferably, plural central openings in the first support member accommodate plural second and third support members, whereby plural substrates are cut from the sheet. The sheet preferably includes plural layers removably adhered to one another, whereby plural substrates are simultaneously formed by a single fluid jet stream. A protective layer may cover at least one surface to the sheet.

Abstract: An abrasive fluid jet cutting composition, method and apparatus for cutting an object from a sheet. In one embodiment, a fluid jet stream is directed against a glass sheet to cut a disk substrate for use in a data storage device. An abrasive slurry is delivered to a fluid jet head from a slurry tank. The slurry is formed by mixing water, abrasive particles, a surfactant or surfactants, and an acid or base. The head also receives a pressurized fluid from a fluid pump. The abrasive slurry and the pressurized fluid are mixed in the head to form the fluid jet stream. Preferably, the abrasive particles are 8-64 microns and may include recycled scrap. The slurry may also contain polishing particles that are smaller than the abrasive particles to affect polishing. In addition to reducing surface tension, the surfactant may cause the abrasive particles to flocculate or disperse.