Abstract: A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.

Abstract: The method comprises providing a semiconductor substrate, which has a main surface and an opposite further main surface, arranging a contact pad above the further main surface, forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via above the contact pad, arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.

Abstract: A wiring (3) comprising electrical conductors (4, 5, 6, 7) is formed in a dielectric layer (2) on or above a semiconductor substrate (1), an opening is formed in the dielectric layer to uncover a contact pad (8), which is formed by one of the conductors, and a further opening is formed in the dielectric layer to uncover an area of a further conductor (5), separate from the contact pad. The further opening is filled with an electrically conductive material (9), and the dielectric layer is thinned from a side opposite the substrate, so that the electrically conductive material protrudes from the dielectric layer.

Abstract: A wiring (3) comprising electrical conductors (4, 5, 6, 7) is formed in a dielectric layer (2) on or above a semiconductor substrate (1), an opening is formed in the dielectric layer to uncover a contact pad (8), which is formed by one of the conductors, and a further opening is formed in the dielectric layer to uncover an area of a further conductor (5), separate from the contact pad. The further opening is filled with an electrically conductive material (9), and the dielectric layer is thinned from a side opposite the substrate, so that the electrically conductive material protrudes from the dielectric layer.

Abstract: The method comprises the steps of providing a semiconductor body or substrate (1) with a recess or trench (2) in a main surface (10), applying a mask (3) on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (4), which is filled with a gas, and forming at least one opening (5) in the mask at a distance from the recess or trench, the distance (6) being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.

Abstract: The method comprises providing a semiconductor substrate, which has a main surface and an opposite further main surface, arranging a contact pad above the further main surface, forming a through-substrate via from the main surface to the further main surface at a distance from the contact pad and, by the same method step together with the through-substrate via, forming a further through-substrate via above the contact pad, arranging a hollow metal via layer in the through-substrate via and, by the same method step together with the metal via layer, arranging a further metal via layer in the further through-substrate via, the further metal via layer contacting the contact pad, and removing a bottom portion of the metal via layer to form an optical via laterally surrounded by the metal via layer.

Abstract: The method comprises the steps of providing a semiconductor body or substrate (1) with a recess or trench (2) in a main surface (10), applying a mask (3) on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (4), which is filled with a gas, and forming at least one opening (5) in the mask at a distance from the recess or trench, the distance (6) being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.