Abstract: The invention relates to an arrangement comprising a support body with a substrate holder, mounted thereon on a gas bearing with rotating drive. The gas bearing and the rotating drive are formed by gas flowing in through nozzles arranged in the separating gaps between support body and substrate. The support body and the substrate holder are embodied as rings, whereby the rings lie on each other in a self-centering manner and the one ring comprises a ring bead extending into a ring recess on the other ring.

Abstract: The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.

Abstract: The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; one or more heated sources where a gaseous halide is formed by chemical reaction of a halogen, especially HCl, fed to the source together with a substrate gas, and a metal, for example GA, In, Al associated with the source, which is transported through a gas inlet section to a substrate supported by the substrate support; and a hydride supply for supplying a hydride, especially NH3, AsH3 or PH3 into the reaction chamber. A plurality of rotationally driven substrate supports is disposed in an annular arrangement on a substrate support carrier, the sources being disposed in the center of said substrate carrier.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

Abstract: The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the process chamber, by means of separate delivery lines. The gas outlet areas lie one above the other between the floor of the process chamber and the cover of the process chamber and have different heights. The first reaction gas flows out of the gas outlet area that is situated next to the process chamber floor, optionally together with a carrier gas. A carrier gas is added at least to the second reaction gas, which flows out of the gas outlet area lying further away from the process chamber floor.

Abstract: The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on said substrate. The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefore provides that the preheated carrier gas washes through the starting material from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated container walls.

Abstract: The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.

Abstract: The invention relates to a method for the deposition of, in particular crystalline layers on a substrate lying on rotating substrate holders in a process chamber. The substrate holders are arranged around the center of a rotating substrate holder support. Said substrate holder support forms a process chamber base together with the substrate holders, which is opposite a process chamber cover which a central gas inlet device, through which, together with a carrier gas, one or several gaseous starting materials may be introduced into a decomposition zone, arranged above a heated central region of the process chamber floor, surrounded by a diffusion zone, from which the decomposition zone, from which the decomposition products are transported radially outwards in the carrier gas stream to the substrate.

Abstract: The invention relates to a method and a device for the thermal treatment, especially short-term, of flat objects in particular, such as semi-conductor, glass or metal substrates. Heat is, at least in part, supplied to or taken away from both sides of said substrates by means of thermal conduction via a thermal conduction medium. The invention aims to improve the method and device so that they can be used effectively. To this end, a mixture consisting of two gases, differing greatly in their thermal conductivity, is used as a thermal conductive medium. The mixture on both sides of the substrate is individually adjusted so that the respective surface temperature is time-controlled by taking the respective heat exchange due to heat radiation into account.

Abstract: The invention relates to an arrangement comprising a support body with a substrate holder, mounted thereon on a gas bearing with rotating drive. The gas bearing and the rotating drive are formed by gas flowing in through nozzles arranged in the separating gaps between support body and substrate. The support body and the substrate holder are embodied as rings, whereby the rings lie on each other in a self-centering manner and the one ring comprises a ring bead extending into a ring recess on the other ring.

Abstract: The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; one or more heated sources where a gaseous halide is formed by chemical reaction of a halogen, especially HCl, fed to the source together with a substrate gas, and a metal, for example GA, In, Al associated with the source, which is transported through a gas inlet section to a substrate supported by the substrate support; and a hydride supply for supplying a hydride, especially NH3, AsH3 or PH3 into the reaction chamber. A plurality of rotationally driven substrate supports is disposed in an annular arrangement on a substrate support carrier, the sources being disposed in the center of said substrate carrier.

Abstract: The invention relates to a method for the metered delivery of low volumetric flows by the introduction of a gaseous stream into a tank containing a liquid and the displacement of the liquid through a liquid conduit. To improve said method, a partial gaseous stream is diverted from a mass-flow controlled gaseous stream, at a pressure that is maintained at a constant level and that essentially corresponds to the gaseous pressure in the tank, and is guided into said tank to displace the liquid, the mass flow of the partial gaseous stream being measured. A variation in the pressure allows a partial gaseous mass-flow to be set, whose volumetric flow, determined by taking into consideration the gas density, corresponds to the desired value for the liquid volumetric flow.

Abstract: The invention relates to a method for supplying a CVD reactor with a liquid starting material entering into a gaseous phase, consisting of a nozzle comprising a liquid channel which leads crosswise into a gas flow channel for producing an aerosol which evaporates with heat. The aim of the invention is to improve the dosability of the generic method or device in such a way that the heat from evaporation is subsequently removed from the gas.

Abstract: The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber (I) of a CVD reactor. At least one first (GI) and one second (02) reaction gas are each led into a gas outlet area (8, 9) in an input area (E) of the process chamber (1), by means of separate delivery lines (6,7). The gas outlet areas (8, 9) lie one above the other between the floor (2) of the process chamber and the cover (3) of the process chamber and have different heights (Hi, H2). The first reaction gas (01) flows out of the gas outlet area (8) that is situated next to the process chamber floor (2), optionally together with a carrier gas (Ti). A carrier gas (T2) is added at least to the second reaction gas (02), which flows out of the gas outlet area (9) lying further away from the process chamber floor (2).

Abstract: The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they react pyrolytically. The process chamber has a first wall and a second wall, lying opposite the first. The first wall is provided with at least one heated substrate holder, to which at least one reaction gas is led by means of a gas inlet device. According to the invention, a premature decomposition of source gases and a local oversaturation of the gas flow with decomposition products may be avoided, whereby the gas inlet device is liquid cooled.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more substrates, especially substrates which are also crystalline, in a process chamber, using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device comprises a reverse-heatable support plate which forms a wall of the process chamber and which can especially be heated with a high frequency, consisting of especially inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber, said process chamber having a circular cross-section, and which is allocated to a cover plate that is situated at a distance from the support plate; and a gas outlet ring which forms the outer limit of the process chamber and which has a plurality of radial gas outlets. According to the invention, the gas outlet ring consists of solid graphite in order to keep the isothermal profile inside the process chamber as flat as possible.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

Abstract: The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by means of a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.

Abstract: The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on said substrate. The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefore provides that the preheated carrier gas washes through the starting material from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated container walls.

Abstract: In an apparatus for printing on dimensionally stable individual articles such as glass or plastic bottles, using screen printing, the articles each carried by a respective holder are transported along a transport path by a continuously circulating transport device. At least one treatment station and at least two transfer stations are associated with the transport path, one transfer station acting as a feed station and the other as a removal station for the articles. During a printing operation on an article the article is rotated about its longitudinal axis in a first direction which is governed by the printing procedure and the transport direction, and then after conclusion of the printing operation the article is rotated back into its initial position by rotation about its longitudinal axis in the opposite direction, so that the position of the article in angular terms about its longitudinal axis can be accurately defined and controlled.