Abstract: A method for compensating for multipath effects when receiving a vestigial sideband modulated TV signal, one portion of the spectrum of the undistorted TV signal being symmetrical with respect to a video carrier frequency, and deviations from the symmetry of the relevant portion of the spectrum that exists in the undistorted state being analyzed in order to suppress the multipath effects.

Abstract: A method for compensating for multipath effects when receiving a vestigial sideband modulated TV signal, one portion of the spectrum of the undistorted TV signal being symmetrical with respect to a video carrier frequency, and deviations from the symmetry of the relevant portion of the spectrum that exists in the undistorted state being analyzed in order to suppress the multipath effects.

Abstract: The invention relates to a semiconductor device which includes a packaged electrical component such as an IC chip, wherein terminal posts are realized within the chip area without additional wafer surface being required beyond the chip edge. A direct feedthrough of the individual electrical connections by way of downwardly extending terminal posts that are connected to bonding pads at the top of the chip results in a small lead length and thus lesser parasitic influences, which in turn results in optimum conditions for use at super-high frequencies. Furthermore, a process for making the semiconductor device offers the option of forming deep vertical trenches on the chip edge and to thus implement separation etching for dicing. During this process, the coverage of the side surface with encapsulating material effects a passivation on the chip edge without further outlay. Expensive rewiring of the connections on the bottom side of the chip is not necessarily due to the terminal posts.

Abstract: A method for manufacturing semiconductor components contactable on both sides, in particular IMPATT diodes. The active silicon layers of the IMPATT diode are grown onto a silicon substrate. The first silicon layer grown onto the silicon substrate has a high boron/germanium doping level and acts as an etch atop layer when the substrate is removed. The boron/germanium doping of the first silicon layer compensates for the mechanical stress in the silicon layer generated by the boron doping.

Abstract: The invention relates to a semiconductor body, which is composed of at least one semiconductor device, especially one impatt-diode, with integrated heat sink. The series of semiconductor layers, out of which the semiconductor device is produced, is made up of one first p.sup.+ -doped semiconductor layer, which has the function of an etching stop layer, of a contact layer and a buffer layer at the same time.

Abstract: The invention relates to a mask for X-ray lithography, in particular, for the manufacture of VLSI semiconductor components, which is economical and reliable in its manufacture. The mask should transfer absorber structures down to the submicron range. Lateral mechanical distortions are avoided by a tension-compensated carrier membrane of simultaneously B and Ge doped silicon. This carrier membrane is also optically more transparent than known Si membranes doped only with B, which facilitates optical alignment of the mask.