Abstract: The copper-indium-gallium (CuInGa) alloy is in particular to be used for the production of sputter targets, tubular cathodes and similar coating material sources. It has a phase corresponding to a Cu5Zn8 prototype phase in which the lattice sites of the zinc atoms (Zn) are occupied by gallium atoms (gallium-substituted Cu5Zn8 phase) and in which indium is simultaneously introduced into the elementary cell or phase, making up a proportion of up to 26 wt %.

Abstract: The copper-indium-gallium (CuInGa) alloy is in particular to be used for the production of sputter targets, tubular cathodes and similar coating material sources. It has a phase corresponding to a Cu5Zn8 prototype phase in which the lattice sites of the zinc atoms (Zn) are occupied by gallium atoms (gallium-substituted Cu5Zn8 phase) and in which indium is simultaneously introduced into the elementary cell or phase, making up a proportion of up to 26 wt %.

Abstract: A method of producing a titanium-suboxide-based coating material comprises the following steps: providing a titanium-suboxide base material; and treating the titanium-suboxide base material under oxidizing conditions for in-situ development of a finely dispersed titanium-dioxide component in the ceramic titanium-suboxide base material.

Abstract: The invention relates to a composite composed of a plastic substrate and a thin, continuous metal-containing layer, characterised in that the metal-containing layer is ductile, adheres firmly to the plastic substrate, has a thickness of <2 .mu.m and is composed of a compound corresponding to the formulaM.sub.a O.sub.b C.sub.x N.sub.y B.sub.zwherein:M means one or more metals from the group comprising Ti, Ta, Nb, Zr and Hf,a=0.025 to 0.9b=0.025 to 0.7x=0.2 to 0.9y=0 to 0.7z=0 to 0.7a+b+x+y+z=1provided that the value of a, starting from the substrate surface, increases from a value approximating zero towards to the layer surface, and at least 50% of the carbon atoms at the base of the layer are bound to other carbon atoms by C--C bonds.