Abstract: A device is provided which reduces the temperature of a solar PV panel. The device includes an enclosure comprising a heat sink attachable to a bottom side of the solar PV panel to provide an air channel, and a tornado tube. The tornado pipe may be oriented vertically to the plane of the earth, and may act as a solar chimney, instigating a flow of air to enter the enclosure through an air inlet. This air flow may be drawn across the heat sink and exit back to the atmosphere through the tornado tube.

Abstract: A P-type solar cell comprises a layer stack with: a back electrode, a p-type semiconductor absorber layer disposed on the back electrode, a crystalline cadmium sulfide (CdS) layer disposed on the absorber layer, and a front electrode disposed on the side of the layer stack opposite of the back electrode. The CdS layer has Cu-doping and a layer thickness between 50 and 300 ?. A method for producing a p-type solar cell comprises: providing a p-type photoactive semiconductor absorber layer, etching the surface of the absorber layer such that crystallographic unevenness and pinholes are reduced, depositing a CdS layer on the absorber layer, with a layer thickness between 50 and 200 ?, heating at least the CdS layer to recrystallize the CdS layer, and optionally placing on the absorber layer a Cu-containing layer different from the CdS layer, either after etching or after the application of the CdS layer.

Abstract: A P-type solar cell comprises a layer stack with: a back electrode, a p-type semiconductor absorber layer disposed on the back electrode, a crystalline cadmium sulfide (CdS) layer disposed on the absorber layer, and a front electrode disposed on the side of the layer stack opposite the back electrode. The CdS layer has Cu-doping and a layer thickness between 50 and 300 ?. A method for producing a p-type solar cell comprises: providing a p-type photoactive semiconductor absorber layer, etching the surface of the absorber layer such that crystallographic unevenness and pinholes are reduced, depositing a CdS layer on the absorber layer, with a layer thickness between 50 and 200 ?, applying heat to at least the CdS layer to recrystallize the CdS layer, and optionally placing on the absorber layer a Cu-containing layer different from the CdS layer, either after etching or after the application of the CdS layer.

Abstract: There is provided a solar collector comprising at least one solar module; at least one solar module frame which supports the solar module; and at least one solar module bracket comprising a profile channel engagement hook, the profile channel engagement hook comprising a neck portion and a foot portion, the foot portion having a foot portion cross-sectional area in a first plane which is larger than a cross-sectional area of the neck portion in a second plane parallel to the first plane. There is also provided a profile channel attached to or integral with a support structure, the profile channel having at least one opening, the profile channel engagement hook engaging the opening such that the neck portion extends through the opening. There are also provided methods of making such solar collectors and methods of mounting such solar collectors on support structures.