Patents by Inventor Karl W. Holtzclaw

Karl W. Holtzclaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9871044
    Abstract: Volatile memory cells including dielectric materials exhibiting a nonlinear capacitance as a function of voltage. The volatile memory cells comprise a source region and a drain region within a substrate and a capacitor coupled to one of the source region and the drain region. The capacitor includes a charge storage material disposed between a pair of electrodes. The charge storage material has a crystal structure comprising an oxide of zirconium, hafnium, and bismuth, and is configured and formulated to transition from a first phase to a second phase exhibiting a higher capacitance than the first phase responsive to application of an electrical field. A digit line is electrically coupled to at least one electrode of the pair of electrodes and one of the source region and the drain region. Semiconductor devices and systems including the volatile memory cells and related methods of operating the volatile memory cells are also described.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: January 16, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Sumeet C. Pandey, Gurtej S. Sandhu, Wayne I. Kinney, Karl W. Holtzclaw
  • Publication number: 20170133383
    Abstract: Volatile memory cells including dielectric materials exhibiting a nonlinear capacitance as a function of voltage. The volatile memory cells comprise a source region and a drain region within a substrate and a capacitor coupled to one of the source region and the drain region. The capacitor includes a charge storage material disposed between a pair of electrodes. The charge storage material has a crystal structure comprising an oxide of zirconium, hafnium, and bismuth, and is configured and formulated to transition from a first phase to a second phase exhibiting a higher capacitance than the first phase responsive to application of an electrical field. A digit line is electrically coupled to at least one electrode of the pair of electrodes and one of the source region and the drain region. Semiconductor devices and systems including the volatile memory cells and related methods of operating the volatile memory cells are also described.
    Type: Application
    Filed: November 6, 2015
    Publication date: May 11, 2017
    Inventors: Sumeet C. Pandey, Gurtej S. Sandhu, Wayne I. Kinney, Karl W. Holtzclaw
  • Patent number: 5461477
    Abstract: A spectrometer comprises a tunable interferometer for producing a monochromatic continuous image at an image plane and including two mirrors having substantially parallel surfaces and an adjustable spacing therebetween, a radiation detector located at the image plane for recording the image, a filter arrangement for allowing at least one predetermined range of wavelengths to pass to the detector, and a lens arrangement for collecting radiation and limiting radiation incident on the interferometer to an angle which is substantially perpendicular to the substantially parallel surfaces of the two mirrors.
    Type: Grant
    Filed: March 10, 1995
    Date of Patent: October 24, 1995
    Assignee: Physical Sciences, Inc.
    Inventors: William J. Marinelli, Karl W. Holtzclaw, Steven J. Davis, Byron D. Green