Patents by Inventor KARLA BERNAL RAMOS

KARLA BERNAL RAMOS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors
    Patent number: 11075276
    Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: July 27, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yongjing Lin, Shih Chung Chen, Naomi Yoshida, Lin Dong, Liqi Wu, Rongjun Wang, Steven Hung, Karla Bernal Ramos, Yixiong Yang, Wei Tang, Sang-Ho Yu
  • METHODS AND APPARATUS FOR N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) METAL GATE MATERIALS USING ATOMIC LAYER DEPOSITION (ALD) PROCESSES WITH METAL BASED PRECURSORS
    Publication number: 20200111885
    Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Inventors: YONGJING LIN, SHIH CHUNG CHEN, NAOMI YOSHIDA, LIN DONG, LIQI WU, RONGJUN WANG, STEVEN HUNG, KARLA BERNAL RAMOS, YIXIONG YANG, WEI TANG, SANG-HO YU