Abstract: A dynamic read amplifier for MOS memories comprises a flip-flop which includes two first switching transistors whose low end can be applied to ground by way of a cut-through transistor in response to a first clock pulse and whose outputs are connected to data lines via cut-off transistors which are controlled by a second clock pulse, whereby the data lines can be charged to the supply voltage by way of a pair of charging transistors in response to a third clock pulse. Given such dynamic read amplifiers for semiconductor memories, the regeneration of a logic "1" level, for example, is possible after an evaluation operation without additional leakage power. Therefore, two additional switching transistors and two further charging transistors are provided, as well as two additional data lines, so that only the respective data line with the logic "1" signal is connected to the supply voltage.

Abstract: An integratable dynamic current source for semiconductor modules which generates impressed currents of brief duration and of minimum current magnitude for read-out amplifiers in dynamic MOS memory modules utilizes capacitors integrated on the semiconductor chip and driven by selected voltage pulses and can be employed with a switching transistor to produce a voltage curve having a first portion with a low rate of change and a second portion having a high rate of change with respect to time.