Patents by Inventor Karoline Koepp

Karoline Koepp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor device with segmented contact layer
    Patent number: 9997608
    Abstract: Disclosed is a transistor device. The transistor device includes a plurality of device cells each having an active device region integrated in a semiconductor body and electrically connected to a contact layer. The contact layer includes a plurality of layer sections separated from each other by a separation layer. A resistivity of the separation layer is at least 100 times the resistivity of the layer sections.
    Type: Grant
    Filed: January 12, 2017
    Date of Patent: June 12, 2018
    Assignee: Infineon Technologies AG
    Inventors: Karoline Koepp, Herbert Gietler
  • Semiconductor device, integrated circuit and method of manufacturing a semiconductor device
    Patent number: 9748378
    Abstract: A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode adjacent to at least two sides of the channel region. The gate electrode is disposed in trenches extending in a first direction parallel to the first main surface. The gate electrode is electrically coupled to a gate terminal. The channel region and the drift zone are disposed along the first direction between the source region and the drain region. The semiconductor device further includes a conductive layer beneath the gate electrode and insulated from the gate electrode. The conductive layer is electrically connected to the gate terminal.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: August 29, 2017
    Assignee: Infineon Technologies AG
    Inventors: Karoline Koepp, Andreas Meiser, Till Schloesser
  • Transistor Device with Segmented Contact Layer
    Publication number: 20170200795
    Abstract: Disclosed is a transistor device. The transistor device includes a plurality of device cells each having an active device region integrated in a semiconductor body and electrically connected to a contact layer. The contact layer includes a plurality of layer sections separated from each other by a separation layer. A resistivity of the separation layer is at least 100 times the resistivity of the layer sections.
    Type: Application
    Filed: January 12, 2017
    Publication date: July 13, 2017
    Inventors: Karoline Koepp, Herbert Gietler
  • Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device
    Publication number: 20160268423
    Abstract: A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode adjacent to at least two sides of the channel region. The gate electrode is disposed in trenches extending in a first direction parallel to the first main surface. The gate electrode is electrically coupled to a gate terminal. The channel region and the drift zone are disposed along the first direction between the source region and the drain region. The semiconductor device further includes a conductive layer beneath the gate electrode and insulated from the gate electrode. The conductive layer is electrically connected to the gate terminal.
    Type: Application
    Filed: March 12, 2015
    Publication date: September 15, 2016
    Inventors: Karoline Koepp, Andreas Meiser, Till Schloesser