Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume, a carrier disposed in the first processing volume, comprising a first thermoelectric module (TEM), and configured to support the substrate while the substrate is being heated or cooled, a chuck disposed within the second processing volume, comprising a second TEM, and configured to receive the substrate from the carrier and to support the substrate while the substrate is being heated or cooled, and a system controller configured to monitor a temperature of at least one of the substrate, the carrier, or the chuck during operation, and based on the temperature of the at least one of the substrate, the carrier, or the chuck, supply current to at least one of the first TEM or the second TEM.

Abstract: Embodiments of methods and apparatus for handling substrates of different sizes are provided herein. In some embodiments, an apparatus for handling substrates of different sizes includes: a pair of end effectors having a first set of contact pads configured to support a substrate having a first size and a second set of contact pads configured to support a substrate having a second size, smaller than the first size.

Abstract: Methods and apparatus for reducing warpage of a substrate. In some embodiments, a method of reducing substrate warpage comprises heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; maintaining the at least the glass transition temperature of the substrate until the substrate is constrained; constraining the substrate with a total clamping force of approximately 5000N to approximately 7000N exerted towards the substrate from a top direction and a bottom direction; applying at least one electrostatic field to the substrate with a first electrostatic chuck positioned above the substrate and a second electrostatic chuck positioned below the substrate; and rapidly cooling the substrate using a first liquid convection heat sink positioned above the substrate and a second liquid convection heat sink positioned below the substrate.

Abstract: Methods for bonding and de-bonding a thin substrate film to a carrier plate are provided herein. In some embodiments, a method of processing a semiconductor substrate includes applying a polymer layer that is non-adhesive to a carrier plate formed of a dielectric material. A second layer is then applied to the polymer layer. One or more redistribution layers are then formed on the second layer. The second layer is then separated from the carrier plate via at least one of magnetic induction heating, infrared exposure, or electrostatic repulsion.

Abstract: Methods for bonding and de-bonding a thin substrate film to a carrier plate are provided herein. In some embodiments, a method of processing a semiconductor substrate includes applying a polymer layer that is non-adhesive to a carrier plate formed of a dielectric material. A second layer is then applied to the polymer layer. One or more redistribution layers are then formed on the second layer. The second layer is then separated from the carrier plate via at least one of magnetic induction heating, infrared exposure, or electrostatic repulsion.

Abstract: A bridging front opening unified pod (FOUP) is provided herein. In some embodiments, the bridging FOUP includes a bottom floor, side walls, a ceiling and a back wall that forms an enclosure volume having a front opening, a plurality of supports coupled to the side walls and extending into the enclosure volume, wherein the plurality of supports are configured to support a substrate carrier, a base plate assembly comprising a base plate coupled to the bottom floor, a pair of L-brackets coupled to the base plate, wherein each L-brackets includes a short lift pin, a long lift pin coupled to the base plate, wherein the height of the short lift pins and the long lift pin is selected such that the substrate is kept level when disposed thereon, and a docking support disposed proximate the base plate assembly and configured to support a substrate carrier.

Abstract: Embodiments of a process kit for processing reduced size substrates are provided herein. In some embodiments, a process kit includes a substrate carrier having a pocket configured to hold a substrate, wherein the pocket extends partially through a thickness of the substrate carrier; and wherein the pocket includes an annular trench disposed at a periphery of a floor of the pocket.

Abstract: Embodiments of a process kit for processing reduced size substrates are provided herein. In some embodiments, a process kit includes a deposition ring having an annular body; and a plurality of protrusions extending upwardly from the annular body and disposed about and equidistant from a central axis of the annular body, wherein an angle between a first protrusion and a second protrusion is between about 140° and about 180°.

Abstract: Embodiments of methods and apparatus for handling substrates of different sizes are provided herein. In some embodiments, an apparatus for handling substrates of different sizes includes: a pair of end effectors having a first set of contact pads configured to support a substrate having a first size and a second set of contact pads configured to support a substrate having a second size, smaller than the first size.

Abstract: A bridging front opening unified pod (FOUP) is provided herein. In some embodiments, the bridging FOUP includes a bottom floor, side walls, a ceiling and a back wall that forms an enclosure volume having a front opening, a plurality of supports coupled to the side walls and extending into the enclosure volume, wherein the plurality of supports are configured to support a substrate carrier, a base plate assembly comprising a base plate coupled to the bottom floor, a pair of L-brackets coupled to the base plate, wherein each L-brackets includes a short lift pin, a long lift pin coupled to the base plate, wherein the height of the short lift pins and the long lift pin is selected such that the substrate is kept level when disposed thereon, and a docking support disposed proximate the base plate assembly and configured to support a substrate carrier.