Abstract: In a magnetic data storage system or a magnetic sensing system including a GMR-structure, a set of structures is introduced that influences an intrinsic magnetic or magneto resistance characteristic such as the field-offset of the GMR-structure. The set of structures is separated from the GMR-structure by a high-resistive metallic material such as Ta.

Abstract: Magnetic field sensors and magnetic memories have at least two magnetoresistive bridge elements (A,B,C,D), wherein each magnetoresistive element comprises a free (F) and a pinned (P) ferromagnetic layer. The magnetization directions of pinned ferromagnetic layers are different for the two bridge elements. In the method, in a first deposition step, a first ferromagnetic layer of one of the two said elements is deposited, during which deposition a magnetic field is applied to pin the magnetization direction MP in the first ferromagnetic layer in a first direction. Then, in a second deposition step, a second ferromagnetic layer of the other of the two said elements is deposited, during which deposition a magnetic field is applied to pin the magnetization direction in the second ferromagnetic layer in a second direction different from, preferably opposite to, the magnetization direction in the first ferromagnetic layer.

Abstract: A magnetic field element provided with a stack of a first magnetic layer structure (7), a second magnetic layer structure (11) having a substantially fixed direction of magnetization (M11), and a spacer layer structure (9) separating the first magnetic layer structure and the second magnetic layer structure from each other. The magnetic field element is further provided with a biasing means for applying a longitudinal bias field to the first magnetic layer structure, which biasing means includes a thin biasing magnetic layer structure (3) located opposite to the first magnetic layer structure. The biasing magnetic layer structure provides a magnetic coupling field component (M3) perpendicular to the direction of magnetization of the second magnetic layer structure and is separated from the first magnetic layer structure by a non-magnetic layer structure (5). The first magnetic layer structure is ferromagnetically coupled to the biasing magnet layer structure.

Abstract: The information carrier (1) contains a storage unit (9), an integrated circuit (10) and a first and a second coupling element (31,32). Said coupling elements (31,32) are intermediate in the transfer of data and energy from a base station (50) to the integrated circuit (10) and vice versa. Between the base station (50) and said coupling elements (31,32) the transfer of data and energy is contactless, and preferably by capacitive coupling. Between at least the first (31) of and preferably both of the coupling elements (31,32) data and energy are transferred by means of capacitive coupling. The base station (50) is preferably incorporated in an apparatus (40) further containing the reading device (60) of the storage unit (9). To facilitate the capacitive coupling, the base station (50) contains a first and a second capacitor plate (54,55).

Abstract: A robust GMR or TMR effect type multilayer structure comprising a free and a pinned ferromagnetic layer, with a wide magnetic field range is described, as required, for example in automotive applications. The improvement is obtained by using an odd number of non-adjacent ferromagnetic layers in an exchange-biased Artificial Anti-Ferromagnet as the pinned layer.

Abstract: The object of the invention is the shielding of a magnetic memory against high external magnetic fields. The magnetic memory (1) comprises an array of magnetic memory elements (2), each memory element (3) including at least one layer of magnetic material (4). The operation of the magnetic memory elements (3) is based on a magnetoresistance effect. The memory (1) is protected against high external magnetic fields by a shielding layer (14), which has been split into regions (5) covering the memory elements (3). The magnetic memory (1) is not erased by high external magnetic fields because of a strong attenuation of the external magnetic field by the regions (5) of the shielding layer (14).

Abstract: A magnetic field element provided with a stack of a first magnetic layer structure (7), a second magnetic layer structure (11) having a substantially fixed direction of magnetization (M11), and a spacer layer structure (9) separating the first magnetic layer structure and the second magnetic layer structure from each other. The magnetic field element is further provided with a biasing means for applying a longitudinal bias field to the first magnetic layer structure, which biasing means includes a thin biasing magnetic layer structure (3) located opposite to the first magnetic layer structure. The biasing magnetic layer structure provides a magnetic coupling field component (M3) perpendicular to the direction of magnetization of the second magnetic layer structure and is separated from the first magnetic layer structure by a non-magnetic layer structure (5). The first magnetic layer structure is ferromagnetically coupled to the biasing magnet layer structure.