Abstract: An assembly for an electrochemical device is provided, including a gas diffusion layer and a sealing element produced on the gas diffusion layer. The sealing element includes an inner sealing region fixed to the gas diffusion layer and an outer sealing region connected to the gas diffusion layer via the inner sealing region. The assembly has minimal warpage without the temperature in the injection molding tool having to be lowered and/or a geometric pre-compensation of the warpage of the sealing element in the inner sealing region. The sealing element includes a relief region arranged between the inner and outer sealing regions and a) includes a relief opening extending through the sealing element and/or b) has a smallest height (he), which is smaller than both one fourth of the greatest height (HI) of the inner sealing region and one fourth of the greatest height (HA) of the outer sealing region.

Abstract: In one aspect, a device includes a first power switch having a first gate, a second power switch paralleled with the first power switch and having a second gate, a gate driver to output a gate drive signal to drive both the first gate and the second gate, a first conduction path to couple the gate drive signal to the first gate, a second conduction path to couple the gate drive signal to the second gate, and a distribution choke to distribute the gate drive signal to the first and second power switches. The distribution choke has a first winding disposed in the first conduction path and a second winding disposed in the second conduction path. The distribution choke is coupled in a differential mode.

Abstract: Circuitry for soft shutdown of a power switch and a power converters that includes circuitry for soft shutdown are described. In one aspect, circuitry for soft shutdown of a power switch includes a sense input to be coupled to a power switch receive a signal representative of current passing through the power switch, a comparator to compare the signal with an overcurrent threshold indicative of an overcurrent condition of the power switch and to output a triggering signal in response to the comparison indicating the overcurrent condition, and a gating transistor to be coupled to a control terminal of the power switch, the gating transistor configured to divert a portion of a drive signal away from the control terminal of the power switch in response to the triggering signal.

Abstract: Circuitry for soft shutdown of a power switch and a power converters that includes circuitry for soft shutdown are described. In one aspect, circuitry for soft shutdown of a power switch includes a sense input to be coupled to a power switch receive a signal representative of current passing through the power switch, a comparator to compare the signal with an overcurrent threshold indicative of an overcurrent condition of the power switch and to output a triggering signal in response to the comparison indicating the overcurrent condition, and a gating transistor to be coupled to a control terminal of the power switch, the gating transistor configured to divert a portion of a drive signal away from the control terminal of the power switch in response to the triggering signal.

Abstract: Circuitry for soft shutdown of a power switch and a power converters that includes circuitry for soft shutdown are described. In one aspect, circuitry for soft shutdown of a power switch includes a sense input to be coupled to a power switch receive a signal representative of current passing through the power switch, a comparator to compare the signal with an overcurrent threshold indicative of an overcurrent condition of the power switch and to output a triggering signal in response to the comparison indicating the overcurrent condition, and a gating transistor to be coupled to a control terminal of the power switch, the gating transistor configured to divert a portion of a drive signal away from the control terminal of the power switch in response to the triggering signal.

Abstract: In one aspect, a device includes a first power switch having a first gate, a second power switch paralleled with the first power switch and having a second gate, a gate driver to output a gate drive signal to drive both the first gate and the second gate, a first conduction path to couple the gate drive signal to the first gate, a second conduction path to couple the gate drive signal to the second gate, and a distribution choke to distribute the gate drive signal to the first and second power switches. The distribution choke has a first winding disposed in the first conduction path and a second winding disposed in the second conduction path. The distribution choke is coupled in a differential mode.

Abstract: Circuitry for soft shutdown of a power switch and a power converters that includes circuitry for soft shutdown are described. In one aspect, circuitry for soft shutdown of a power switch includes a sense input to be coupled to a power switch receive a signal representative of current passing through the power switch, a comparator to compare the signal with an overcurrent threshold indicative of an overcurrent condition of the power switch and to output a triggering signal in response to the comparison indicating the overcurrent condition, and a gating transistor to be coupled to a control terminal of the power switch, the gating transistor configured to divert a portion of a drive signal away from the control terminal of the power switch in response to the triggering signal.

Abstract: In a converter for converting energy from a generator to a power network, wherein the converter comprises multiple power modules, wherein each power module includes at least two power cells and a transformer for connecting the power cells to the power network, wherein each power cell includes a phase input, a phase output, a transformer output connected to the transformer, a rectifier circuit and an inverter, the transformer (T) of a power module (4.1, . . . , 4.n) includes one generator-side winding (10) for each of the power cells (5) and exactly one common grid-side winding for balancing an energy flow through the power cells (5) of a power module (4.1, . . . , 4.n).

Abstract: In a converter for converting energy from a generator to a power network, wherein the converter comprises multiple power modules, wherein each power module includes at least two power cells and a transformer for connecting the power cells to the power network, wherein each power cell includes a phase input, a phase output, a transformer output connected to the transformer, a rectifier circuit and an inverter, the transformer (T) of a power module (4.1, . . . , 4.n) includes one generator-side winding (10) for each of the power cells (5) and exactly one common grid-side winding for balancing an energy flow through the power cells (5) of a power module (4.1, . . . , 4.n).

Abstract: A method and an arrangement are provided for balancing the switching transient behavior of parallel connected power semiconductor components. The method includes providing a switch signal to the parallel connected power semiconductor components for changing the state of the components, forming control signals for each of the parallel connected components from the switch signal, and determining, during the change of state of the power semiconductor component, the voltage induced to an inductance in the main current path of the component in each of the parallel connected components. The method also includes comparing each of the induced voltages with a predetermined threshold voltage, measuring time differences between the time instants at which the induced voltages crosses the threshold voltage, and modifying one or more of the control signals on the basis of the measured time differences in the respective following state change for balancing the switching transient behavior.

Abstract: A method and an arrangement are provided for balancing the switching transient behavior of parallel connected power semiconductor components. The method includes providing a switch signal to the parallel connected power semiconductor components for changing the state of the components, forming control signals for each of the parallel connected components from the switch signal, and determining, during the change of state of the power semiconductor component, the voltage induced to an inductance in the main current path of the component in each of the parallel connected components. The method also includes comparing each of the induced voltages with a predetermined threshold voltage, measuring time differences between the time instants at which the induced voltages crosses the threshold voltage, and modifying one or more of the control signals on the basis of the measured time differences in the respective following state change for balancing the switching transient behavior.