Abstract: A method is described for manufacturing solar cells having a selective emitter. Wafers free of saw damage are initially provided. A doping source is then applied over the entire surface of the wafer and the dopant is initially lightly diffused into the wafer until a first layer resistance area is obtained. The applied doping source is subsequently structured, only those areas which essentially correspond to the sections on the wafer to be subsequently contacted remaining as a result of the structuring.

Abstract: A method for producing a monocrystalline solar cell having a passivated back side and a back side contact structure, having the following steps: applying a passivating dielectric layer onto the back side of the cell over the entire surface; removing the passivating layer locally in the area of bus bars and local contact locations; coating the back side of the cell homogeneously to develop an unpatterned, thin metal layer, which touches the surface of the substrate material in the areas free of the passivating layer; generating a thick layer from a conductive paste in the area of the bus bars and the local contact locations; and sintering of the thick layer at a temperature above a predefined eutectic temperature, and the formation of a eutectic, low-resistance connection of the thin metal layer to the surface of the substrate material as well as to the conductive particles of the thick layer paste.