Abstract: A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.

Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

Abstract: Methods of forming transistor arrangements using alternating phase shift masks are provided. The mask may include two parallel opaque lines, a first transparent section separating the opaque lines and a second transparent section in the rest. The second transparent section may shift the phase with respect to the first transparent section by 180 degree. A phase conflict occurs along an edge between the first and the second transparent sections. A semiconductor substrate is patterned via the mask and, from the opaque lines functional active areas of a transistor pair and from the phase conflict edge, thereby resulting in a parasitic area. A separation gate is provided that is capable of switching off a parasitic transistor being formed within the parasitic area. Channel widths may be stabilized and maximized within dense transistor arrangements, for example, in a multiplexer portion of a sense amplifier arrangement for memory cell arrays.

Abstract: A mask arrangement or an optical projection system includes a diffractive optical element. The diffractive optical element includes grid sections having gratings with defined grating parameters and absorbing elements with defined absorption properties, wherein each grid section corresponds to a respective mask section with mask pattern elements. The diffractive optical element may correct dimension deviations of resist pattern elements obtained from the respective mask pattern elements, wherein the deviations are caused by dimension deviations of the mask pattern elements or by local deviations and defects of the projection system.

Abstract: An imaging system having a dipole diaphragm (2) having two diaphragm openings (2b) arranged one behind the other in a dipole axis (y), and a mask having mask structures (20, 23) is used for producing semiconductor structures (10?, 13?) on a wafer (15?) by imaging the mask (25) onto the wafer (15?). The dipole diaphragm (2) is provided for the imaging of the mask (25), and the mask (25), for producing main semiconductor structures (10; 10?) on the wafer (15?), has main mask structures (20) parallel to an imaging axis (x) running perpendicular to the dipole axis (y). At least one connecting mask structure (23?) oriented obliquely with respect to the dipole axis (y) at least in sections is formed on the mask (25), which structure connects at least two main mask structures (20) to one another.

Abstract: An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

Abstract: A method is used to produce semiconductor patterns (10?, 13?) on a wafer (15?). For this purpose, a mask (25) and a dipole aperture (2) with two aperture openings (2b) arranged behind one another in a dipole axis (y) are used. The mask (25) is imaged on the wafer (15?) by means of the dipole aperture (2) and, by the imaging of the mask (25) on the wafer (15?), main semiconductor patterns (10?) are produced which are aligned perpendicularly to the dipole axis (y) and in parallel with an imaging axis (x). A second mask (35) with at least one connecting mask pattern (33) is imaged on the wafer (15?) by means of a second aperture (6), as a result of which a connecting semiconductor pattern (13) is produced on the wafer (15?), by means of which at least two of the main semiconductor patterns (10?) are connected to one another.

Abstract: A set of at least two masks for the projection of structure patterns, coordinated with one another, by a projection system into the same photosensitive layer of a semiconductor wafer can include a second mask.