Patents by Inventor Karthik S. Colinjivadi

Karthik S. Colinjivadi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250191926
    Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.
    Type: Application
    Filed: February 19, 2025
    Publication date: June 12, 2025
    Inventors: Jon HENRI, Karthik S. COLINJIVADI, Francis Sloan ROBERTS, Kapu Sirish REDDY, Samantha SiamHwa TAN, Shih-Ked LEE, Eric HUDSON, Todd SHROEDER, Jialing YANG, Huifeng ZHENG
  • Patent number: 12249514
    Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: March 11, 2025
    Assignee: Lam Research Corporation
    Inventors: Jon Henri, Karthik S. Colinjivadi, Francis Sloan Roberts, Kapu Sirish Reddy, Samantha Siamhwa Tan, Shih-Ked Lee, Eric Hudson, Todd Shroeder, Jialing Yang, Huifeng Zheng
  • Patent number: 11670516
    Abstract: Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten carbonitride, a tungsten sulfide, tin, a tin-containing compound, molybdenum, a molybdenum-containing compound, a ruthenium carbonitride, a ruthenium sulfide, an aluminum carbonitride, an aluminum sulfide, zirconium, and a zirconium-containing compound. A number of optional steps may be taken including, for example, doping the mask layer, pre-treating the substrate prior to deposition, removing the protective film from the sidewalls, and oxidizing any remaining protective film.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: June 6, 2023
    Assignee: Lam Research Corporation
    Inventors: Karthik S. Colinjivadi, Samantha SiamHwa Tan, Shih-Ked Lee, George Matamis, Yongsik Yu, Yang Pan, Patrick Van Cleemput, Akhil Singhal, Juwen Gao, Raashina Humayun
  • Publication number: 20220199417
    Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.
    Type: Application
    Filed: March 16, 2020
    Publication date: June 23, 2022
    Inventors: Jon HENRI, Karthik S. COLINJIVADI, Francis Sloan ROBERTS, Kapu Sirish REDDY, Samantha SiamHwa TAN, Shih-Ked LEE, Eric HUDSON, Todd SHROEDER, Jialing YANG, Huifeng ZHENG
  • Publication number: 20210242032
    Abstract: Various embodiments herein relate to methods, apparatus, and systems for etching a feature in a substrate. Typically the feature is etched in a dielectric-containing stack. The etching process involves cyclically etching the feature and depositing a protective film on sidewalls of the partially etched feature. These stages are repeated until the feature reaches its final depth. The protective film may have a particular composition, for example including at least one of a tungsten carbonitride, a tungsten sulfide, tin, a tin-containing compound, molybdenum, a molybdenum-containing compound, a ruthenium carbonitride, a ruthenium sulfide, an aluminum carbonitride, an aluminum sulfide, zirconium, and a zirconium-containing compound. A number of optional steps may be taken including, for example, doping the mask layer, pre-treating the substrate prior to deposition, removing the protective film from the sidewalls, and oxidizing any remaining protective film.
    Type: Application
    Filed: August 19, 2019
    Publication date: August 5, 2021
    Inventors: Karthik S. COLINJIVADI, Samantha SiamHwa TAN, Shih-Ked LEE, George MATAMIS, Yongsik YU, Yang PAN, Patrick VAN CLEEMPUT, Akhil SINGHAL, Juwen GAO, Raashina HUMAYUN
  • Patent number: 11062897
    Abstract: Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: July 13, 2021
    Assignee: Lam Research Corporation
    Inventors: Yongsik Yu, David Wingto Cheung, Kirk J. Ostrowski, Nikkon Ghosh, Karthik S. Colinjivadi, Samantha Tan, Nathan Musselwhite, Mark Naoshi Kawaguchi
  • Publication number: 20180358220
    Abstract: Methods and apparatuses for etching metal-doped carbon-containing materials are provided herein. Etching methods include using a mixture of an etching gas suitable for etching the carbon component of the metal-doped carbon-containing material and an additive gas suitable for etching the metal component of the metal-doped carbon-containing material and igniting a plasma to selectively remove metal-doped carbon-containing materials relative to underlayers such as silicon oxide, silicon nitride, and silicon, at high temperatures. Apparatuses suitable for etching metal-doped carbon-containing materials are equipped with a high temperature movable pedestal, a plasma source, and a showerhead between a plasma generating region and the substrate.
    Type: Application
    Filed: June 30, 2017
    Publication date: December 13, 2018
    Inventors: Yongsik Yu, David Wingto Cheung, Kirk J. Ostrowski, Nikkon Ghosh, Karthik S. Colinjivadi, Samantha Tan, Nathan Musselwhite, Mark Naoshi Kawaguchi