Abstract: A seal ring includes a weld and a thermoplastic material. The thermoplastic material has a weld elongation-at-break of at least 3%. The thermoplastic material can have a glass transition temperature of at least 100° C. The thermoplastic material with the weld can have a weld elongation-at-break of at least 3%. The seal ring can have a circumference of at least 0.62 meters. The seal ring can have a coefficient of friction of not greater than 0.45.

Abstract: A seal includes a polymeric jacket defining a seal surface and an inner cavity extending within the polymeric jacket along a length of the polymeric jacket. The seal further includes a spring extending within the inner cavity and including a plurality of laser cut spring elements. The seal can be disposed between a static component and a rotatable component.

Abstract: A seal includes a polymeric jacket defining a seal surface and an inner cavity extending within the polymeric jacket along a length of the polymeric jacket. The seal further includes a spring extending within the inner cavity and including a plurality of laser cut spring elements. The seal can be disposed between a static component and a rotatable component.

Abstract: A method of forming a seal ring includes heating an extruded rod to a temperature above a glass transition temperature. The extruded rod has first and second ends. The method further includes bending the extruded rod into a circular structure while the temperature is above the glass transition temperature, joining the first and second ends of the extruded rod to form a semi-finished ring, and annealing the semi-finished ring.

Abstract: A seal ring includes a weld and a thermoplastic material. The thermoplastic material has a weld elongation-at-break of at least 3%. The thermoplastic material can have a glass transition temperature of at least 100° C. The thermoplastic material with the weld can have a weld elongation-at-break of at least 3%. The seal ring can have a circumference of at least 0.62 meters. The seal ring can have a coefficient of friction of not greater than 0.45.

Abstract: A seal is formed of a material including a crosslinked fluoropolymer. The seal substantially prevents leaks in a high pressure pump.

Abstract: A seal is formed of a material including a crosslinked fluoropolymer. The seal substantially prevents leaks in a high pressure pump.

Abstract: A seal is formed of a material including a crosslinked fluoropolymer. The seal substantially prevents leaks in a high pressure pump.

Abstract: A seal includes a polymeric jacket defining a seal surface and an inner cavity extending within the polymeric jacket along a length of the polymeric jacket. The seal further includes a spring extending within the inner cavity and including a plurality of laser cut spring elements. The seal can be disposed between a static component and a rotatable component.

Abstract: A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.

Abstract: A seal includes a seal body including an annular cavity, and an annular spring within the annular cavity. The seal body, the seal body includes a composite material having a thermoplastic material and a filler. The composite material can have a Young's Modulus of at least about 0.5 GPa, a volume resistitivity of not greater than about 200 Ohm-cm, an elongation of at least about 20%, a surface resistitivity of not greater than about 104 Ohm/sq, or any combination thereof.

Abstract: A cross-diametric compression spring includes a conductive ribbon formed into an overlapping helical coil wherein adjacent loops of the conductive ribbon overlap. The conductive ribbon has a width extending substantially parallel to length of the overlapping helical coil.

Abstract: A micro-fluid ejection assembly and method therefor. The micro-fluid ejection assembly includes a silicon substrate having a fluid supply slot therein. The fluid supply slot is formed by an etch process conducted on a substrate using, a first etch mask circumscribing the fluid supply slot, and a second etch mask applied over a functional layer on the substrate.

Abstract: A seal is formed of a material including a crosslinked fluoropolymer. The seal substantially prevents leaks in a high pressure pump.

Abstract: A method of forming a seal ring includes heating an extruded rod to a temperature above a glass transition temperature. The extruded rod has first and second ends. The method further includes bending the extruded rod into a circular structure while the temperature is above the glass transition temperature, joining the first and second ends of the extruded rod to form a semi-finished ring, and annealing the semi-finished ring.

Abstract: A seal ring includes a weld and a thermoplastic material. The thermoplastic material has a weld elongation-at-break of at least 3%. The thermoplastic material can have a glass transition temperature of at least 100° C. The thermoplastic material with the weld can have a weld elongation-at-break of at least 3%. The seal ring can have a circumference of at least 0.62 meters. The seal ring can have a coefficient of friction of not greater than 0.45.

Abstract: A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.

Abstract: A radiation curable resin composition having improved flexibility. The radiation curable composition having from about 5 to about 50 weight percent of a difunctional polymeric compound; from about 1 to about 10 weight percent of a photoinitiator; from about 1 to about 10 weight percent of a flexibilizer agent, wherein the flexibilizer agent has a molecular weight ranging from about 400 to about 10,000; and about 30 to about 90 weight percent of the non-photoreactive solvent, wherein the weight percents are based on the total weight of the resin composition. Ink jet print heads and ink jet printing apparatusess comprising ink jet print heads utilizing the radiation curable resin compositions are also included.

Abstract: A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (referred to collectively as “slots”) in the substrates. The process includes applying a first layer to a first surface of substrate to provide an etch mask material layer on the first surface of the substrate. A second layer is applied to a second surface of the substrate to provide an etch stop material layer on the second surface of the substrate. The first layer and the second layer have similar solubilities in one or more organic solvents. The substrate is etched from the first surface of the wafers to provide a slot in the substrate. After etching the substrate, the etch mask material layer and the etch stop material layer are removed by contacting the first surface and the second surface of the substrate with a single organic solvent.

Abstract: A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter “slots”) in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.