Patents by Inventor Kartik Ramaswamy

Kartik Ramaswamy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200035454
    Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.
    Type: Application
    Filed: October 7, 2019
    Publication date: January 30, 2020
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Patent number: 10546731
    Abstract: A method, apparatus and system for dechucking a processing object from a surface of an electrostatic chuck (ESC) in a processing chamber can include applying to the ESC for a first time interval, a first dechuck voltage having a substantially equal magnitude and opposite polarity of a chuck voltage chucking the processing object to the surface of the ESC, selecting a second dechuck voltage having an opposite polarity as the first dechuck voltage, linearly sweeping the ESC voltage from the first dechuck voltage to the second dechuck voltage over a second time interval, monitoring the ESC current during the second time interval until a current spike in the ESC current above a threshold is detected, communicating a command to move support pins up to remove the processing object from the ESC surface, and maintaining the second dechuck voltage until the processing object is separated from the surface of the ESC.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: January 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Haitao Wang, Michael G. Chafin, Kartik Ramaswamy, Yue Guo, Valentin Todorow, Kenny Doan, Sergio F. Shoji, Brad L. Mays, Usama Dadu
  • Patent number: 10546728
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10544505
    Abstract: A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: January 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yang Yang, Kartik Ramaswamy, Kenneth S. Collins, Steven Lane, Gonzalo Antonio Monroy, Lucy Chen, Yue Guo
  • Patent number: 10535502
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20200006036
    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.
    Type: Application
    Filed: April 22, 2019
    Publication date: January 2, 2020
    Inventors: Yue GUO, Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN
  • Publication number: 20190393053
    Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 26, 2019
    Inventors: Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Patent number: 10510515
    Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: December 17, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, Shahid Rauf, Kallol Bera, James D. Carducci, Michael R. Rice, Yue Guo
  • Patent number: 10504765
    Abstract: Embodiments include an electrostatic chuck assembly having an electrostatic chuck mounted on an insulator. The electrostatic chuck and insulator may be within a chamber volume of a process chamber. In an embodiment, a ground shield surrounds the electrostatic chuck and the insulator, and a gap between the ground shield and the electrostatic chuck provides an environment at risk for electric field emission. A dielectric filler can be placed within the gap to reduce a likelihood of electric field emission. The dielectric filler can have a flexible outer surface that covers or attaches to the electrostatic chuck, or an interface between the electrostatic chuck and the insulator Other embodiments are also described and claimed.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: December 10, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Anwar Husain, Haitao Wang, Evans Yip Lee, Jaeyong Cho, Hamid Noorbakhsh, Kenny L. Doan, Sergio Fukuda Shoji, Chunlei Zhang
  • Publication number: 20190348260
    Abstract: Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (VHF) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more VHF sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more VHF sources to generate a VHF signal and the two or more low frequency sources to generate two or more low frequency signals.
    Type: Application
    Filed: July 24, 2019
    Publication date: November 14, 2019
    Inventors: WONSEOK LEE, KARTIK RAMASWAMY, Ankur AGARWAL, Haitao WANG
  • Patent number: 10475626
    Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: November 12, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Publication number: 20190330748
    Abstract: A gas distribution hub for a plasma reactor chamber has a nozzle includes an inner gas injection passage and an outer gas injection passage, each open to a bottom surface of the hub. For each of the inner and outer gas injection passages, multiple radial elevated feed lines have input ends at a periphery of the hub to receive gas and output ends overlying the respective gas injection passage. Respective axial drop lines connect the respective output ends of the radial elevated feed lines to the respective gas injection passages.
    Type: Application
    Filed: July 8, 2019
    Publication date: October 31, 2019
    Inventors: Andrew Nguyen, Kenneth S. Collins, Kartik Ramaswamy
  • Patent number: 10453655
    Abstract: A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: October 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Satoru Kobayashi, Hideo Sugai, Soonam Park, Kartik Ramaswamy, Dmitry Lubomirsky
  • Patent number: 10453656
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: October 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20190287765
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Application
    Filed: June 6, 2019
    Publication date: September 19, 2019
    Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
  • Patent number: 10418225
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: September 17, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Publication number: 20190271082
    Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.
    Type: Application
    Filed: May 21, 2019
    Publication date: September 5, 2019
    Inventors: Haitao WANG, Hamid NOORBAKHSH, Chunlei ZHANG, Sergio Fukuda SHOJI, Kartik RAMASWAMY, Roland SMITH, Brad L. MAYS
  • Patent number: 10395896
    Abstract: Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (VHF) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more VHF sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more VHF sources to generate a VHF signal and the two or more low frequency sources to generate two or more low frequency signals.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: August 27, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wonseok Lee, Kartik Ramaswamy, Ankur Agarwal, Haitao Wang
  • Patent number: 10395904
    Abstract: Plural sensors on an interior surface of a reactor chamber are linked by respective RF communication channels to a hub inside the reactor chamber, which in turn is linked to a process controller outside of the chamber.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: August 27, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Lawrence Wong, Kartik Ramaswamy, Yang Yang, Steven Lane, Richard Fovell
  • Patent number: 10378108
    Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: August 13, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Haitao Wang, Hamid Noorbakhsh, Chunlei Zhang, Sergio Fukuda Shoji, Kartik Ramaswamy, Roland Smith, Brad L. Mays