Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: Methods and apparatus for generating a variable clock used to control a component of a substrate processing system are provided herein. In some embodiments, an apparatus for controlling a substrate processing system includes: a phase locked loop circuit for generating a relative clock that is phase locked to a variable frequency signal being used by a substrate processing chamber; and a controller, coupled to the phase locked loop circuit, for producing a control signal for a component of the substrate processing system, wherein the control signal is based upon the relative clock and an operating indicia of the substrate processing system.

Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution.

Abstract: Phase angle between opposing electrodes in a plasma reactor is controlled in accordance with a user selected phase angle. Direct digital synthesis of RF waveforms of different phases for the different electrodes is employed. The synthesis is synchronized with a reference clock. The address generator employed for direct digital synthesis is synchronized with an output clock signal that is generated in phase with the reference clock using a phase lock loop. The phase lock loop operates only during a limited initialization period.

Abstract: A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary 7 source utilizes RF energy of a first frequency, while the secondary source utilizes RF energy of second, different frequency. The showerhead electrode is coupled to ground through a frequency dependent filter that adequately discriminates between the first and second frequencies for the showerhead electrode to be RF powered during operation of the primary source, yet adequately grounded during operation of the secondary plasma source without electrical contact switching or reliance on physically moving parts.

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: Radial transmission line based plasma sources for etch chambers are described. In an example, a radial transmission line based plasma source includes a gas delivery channel having a first end coupled to a gas inlet and having a second end coupled to a plasma showerhead. A folded or co-axial stub surrounds at least a portion of the gas delivery channel. An RF input is coupled to the folded or co-axial stub.

Abstract: Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.

Abstract: Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without exposing the lower thin film layer, and then the etch process is completed in a toroidal source plasma reactor.

Abstract: A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

Abstract: A plasma reactor includes an RF-driven ceiling electrode overlying a process zone and two (or more) counter electrodes underlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract: A plasma reactor includes an RF-driven wafer support electrode underlying a process zone and two (or more) counter electrodes overlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract: A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workplace support. A grid may be included for masking spatial effects of the struts from the processing region.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and symmetrical RF shielding around the symmetric RF feeds.