Patents by Inventor Kartikeya Gupta

Kartikeya Gupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10180542
    Abstract: A control device that may be implemented in a single IC chip is provided that is capable of controlling EAM bias voltages and DFB bias currents and of monitoring the EAM photocurrents and received signal strength indicators (RSSIs) in a multi-channel optical transceiver module. The control device IC chip can be manufactured at relatively low cost with relatively high yield, and can be implemented in a relatively small area. To implement the control device in a single IC chip, multiple supply voltage domains are used in the IC chip, one of which is a negative supply voltage domain and one of which is a positive supply voltage domain. In order to provide these different supply voltage domains, a level shift circuit is employed in the IC chip that converts signals from the positive to the negative supply voltage domain, and vice versa, and changes the voltage levels, as needed.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: January 15, 2019
    Assignee: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
    Inventors: Samir Aboulhouda, Faouzi Chaahoub, Ahmed Rashid Syed, Kartikeya Gupta, Kazi Asaduzzaman
  • Publication number: 20180267257
    Abstract: A control device that may be implemented in a single IC chip is provided that is capable of controlling EAM bias voltages and DFB bias currents and of monitoring the EAM photocurrents and received signal strength indicators (RSSIs) in a multi-channel optical transceiver module. The control device IC chip can be manufactured at relatively low cost with relatively high yield, and can be implemented in a relatively small area. To implement the control device in a single IC chip, multiple supply voltage domains are used in the IC chip, one of which is a negative supply voltage domain and one of which is a positive supply voltage domain. In order to provide these different supply voltage domains, a level shift circuit is employed in the IC chip that converts signals from the positive to the negative supply voltage domain, and vice versa, and changes the voltage levels, as needed.
    Type: Application
    Filed: June 30, 2017
    Publication date: September 20, 2018
    Inventors: Samir Aboulhouda, Faouzi Chaahoub, Ahmed Rashid Syed, Kartikeya Gupta, Kazi Asaduzzaman
  • Publication number: 20180034432
    Abstract: A burst-mode TIA circuit for use in PON receivers is provided that supports multiple data rates, has high receiver sensitivity, wide dynamic range, and that performs burst-mode synchronization very quickly. The multi-rate burst-mode TIA circuit has a high-speed data path that has low input-referred noise. Based on the chosen data rate at which the multi-rate burst-mode TIA circuit will operate, the rate select switch selects an appropriate feedback resistor of the resistive feedback network.
    Type: Application
    Filed: July 31, 2016
    Publication date: February 1, 2018
    Inventors: Rahul Shringarpure, Georgios Asmanis, Faouzi Chaahoub, Kartikeya Gupta
  • Patent number: 9882539
    Abstract: A burst-mode TIA circuit for use in PON receivers is provided that supports multiple data rates, has high receiver sensitivity, wide dynamic range, and that performs burst-mode synchronization very quickly. The multi-rate burst-mode TIA circuit has a high-speed data path that has low input-referred noise. Based on the chosen data rate at which the multi-rate burst-mode TIA circuit will operate, the rate select switch selects an appropriate feedback resistor of the resistive feedback network.
    Type: Grant
    Filed: July 31, 2016
    Date of Patent: January 30, 2018
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Rahul Shringarpure, Georgios Asmanis, Faouzi Chaahoub, Kartikeya Gupta