Patents by Inventor Kasegn D. Tekletsadik
Kasegn D. Tekletsadik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8467158Abstract: A new type of superconducting fault current limiter is disclosed, which can advantageously be used with high voltage transmission networks. The circuit is electrically connected to two terminals, which connect to the transmission network. The superconducting circuit is located within an enclosure or tank, which is electrically isolated from ground. Therefore, the voltage difference between the enclosure and the superconducting circuit, and between the enclosure and the terminals are significantly less than exist in current deployments. In some embodiments, the enclosure is electrically connected to one of the terminals, while in other embodiments, the enclosure is electrically isolated from the terminals. The circuit can be combined with other like circuits to address a wide range of current transmission network configurations.Type: GrantFiled: June 18, 2010Date of Patent: June 18, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. Tekletsadik, Roger B. Fish, Paul J. Murphy
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Publication number: 20130130913Abstract: Techniques for protecting a superconducting (SC) article are disclosed. The techniques may be realized as an apparatus for protecting a superconducting (SC) article. The apparatus may comprise a porous sleeve configured to fit around the superconducting (SC) article. The porous sleeve may be made of non-conductive, dielectric material.Type: ApplicationFiled: November 17, 2011Publication date: May 23, 2013Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Gregory Citver, Semaan Fersan, Kasegn D. Tekletsadik, Scott Nickerson, Charles L. Stanley, Eric D. Hermanson
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Publication number: 20120275067Abstract: A connector assembly of a superconducting fault current limiter includes a first superconducting tape element, an electrical connector electrically coupled to the first superconducting element at a first region of the electrical conductor, and a second superconducting tape element electrically coupled to the electrical connector in a second region of the electrical connector. The electrical connector comprises a unitary structure. The first superconducting tape element, the electrical connector, and the second superconducting tape element comprise may comprise a layer.Type: ApplicationFiled: December 29, 2010Publication date: November 1, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventor: Kasegn D. Tekletsadik
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Publication number: 20110312498Abstract: A fault current limiter that maximizes transient stability by minimizing the power swing experienced by the generator during a fault condition is disclosed. A superconducting fault current limiter (SCFCL) is used, whereby the impedance of the SCFCL changes in the presence of a fault. In parallel with the SCFCL is a shunt impedance, which is the impedance seen by the generator during the fault. By decreasing the ratio of the reactance of the shunt impedance to its resistance, the stability of the power system may be enhanced.Type: ApplicationFiled: June 16, 2011Publication date: December 22, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventor: Kasegn D. Tekletsadik
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Patent number: 8000080Abstract: An apparatus and method for trapping particles in a housing is disclosed. A high voltage terminal/structure is situated within a housing. A conductive material, having a plurality of holes, such as a mesh, is disposed a distance away from an interior surface of the housing, such as the floor of the housing, forming a particle trap. The conductive mesh is biased so that the electrical field within the trap is either non-existent or pushing toward the floor, so as to retain particles within the trap. Additionally, a particle mover, such as a fan or mechanical vibration device, can be used to urge particles into the openings in the mesh. Furthermore, a conditioning phase may be used prior to operating the high voltage terminal, whereby a voltage is applied to the conductive mesh so as to attract particles toward the particle trap.Type: GrantFiled: December 4, 2008Date of Patent: August 16, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Stephen E. Krause, Russell J. Low, Kasegn D. Tekletsadik
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Patent number: 7999239Abstract: Techniques for reducing an electrical stress in a acceleration/deceleration system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an acceleration/deceleration system. The acceleration/deceleration system may comprise an acceleration column including a plurality of electrodes having apertures through which a charged particle beam may pass. The acceleration/deceleration system may also comprise a plurality of voltage grading components respectively electrically coupled to the plurality of electrodes. The acceleration/deceleration system may further comprise a plurality of insulated conductors disposed proximate the plurality of voltage grading components to modify an electrical field about the plurality of voltage grading components.Type: GrantFiled: January 2, 2008Date of Patent: August 16, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. Tekletsadik, Russell J. Low
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Publication number: 20110094798Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.Type: ApplicationFiled: January 3, 2011Publication date: April 28, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
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Publication number: 20110094862Abstract: Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.Type: ApplicationFiled: January 3, 2011Publication date: April 28, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Douglas E. MAY, Kasegn D. Tekletsadik, Eric Hermanson, Piotr R. Lubicki, Russell J. Low, Joseph C. Olson, Stephen E. Krause
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Publication number: 20110056746Abstract: An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor.Type: ApplicationFiled: March 2, 2010Publication date: March 10, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Kasegn D. Tekletsadik, Russell J. Low
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Patent number: 7863531Abstract: Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.Type: GrantFiled: September 26, 2007Date of Patent: January 4, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Douglas E. May, Kasegn D. Tekletsadik, Eric Hermanson, Piotr R. Lubicki, Russell J. Low, Joseph C. Olson, Stephen E. Krause
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Patent number: 7863520Abstract: Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.Type: GrantFiled: August 14, 2007Date of Patent: January 4, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Russell J. Low, Kasegn D. Tekletsadik, Anthony Renau, Piotr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Doug E. May
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Patent number: 7842934Abstract: Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.Type: GrantFiled: August 27, 2007Date of Patent: November 30, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. Tekletsadik, Eric Hermanson, Doug May, Steve Krause, Russell John Low
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Publication number: 20100296208Abstract: A new type of superconducting fault current limiter is disclosed, which can advantageously be used with high voltage transmission networks. The circuit is electrically connected to two terminals, which connect to the transmission network. The superconducting circuit is located within an enclosure or tank, which is electrically isolated from ground. Therefore, the voltage difference between the enclosure and the superconducting circuit, and between the enclosure and the terminals are significantly less than exist in current deployments. In some embodiments, the enclosure is electrically connected to one of the terminals, while in other embodiments, the enclosure is electrically isolated from the terminals. The circuit can be combined with other like circuits to address a wide range of current transmission network configurations.Type: ApplicationFiled: June 18, 2010Publication date: November 25, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Kasegn D. Tekletsadik, Roger B. Fish, Paul J. Murphy
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Patent number: 7799999Abstract: Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.Type: GrantFiled: August 20, 2007Date of Patent: September 21, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. Tekletsadik, Steve Krause, Eric Hermanson, Russell J. Low
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Patent number: 7675046Abstract: An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.Type: GrantFiled: September 27, 2006Date of Patent: March 9, 2010Assignee: Varian Semiconductor Equipment Associates, IncInventors: Kasegn D. Tekletsadik, Russell J. Low
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Ion acceleration column connection mechanism with integrated shielding electrode and related methods
Patent number: 7655928Abstract: Ion accelerating devices including connection mechanisms with integrated shielding electrode and related methods are disclosed. According to an embodiment, an ion accelerating device of an ion implantation system comprises: a first element; a first connection system within the first element, the first connection system including a first connector and a first encapsulated shielding electrode around the first connector; and a second connection system within a second element other than the first element, the second connection system being coupled to the first connector; wherein the first encapsulated shielding electrode includes a first shielding portion adjacent to a first interface surface of the first element where the second connection system interfaces with the first element, in a cross-sectional view, the first shielding portion being substantially U-shaped.Type: GrantFiled: March 29, 2007Date of Patent: February 2, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventor: Kasegn D. Tekletsadik -
Publication number: 20090147435Abstract: An apparatus and method for trapping particles in a housing is disclosed. A high voltage terminal/structure is situated within a housing. A conductive material, having a plurality of holes, such as a mesh, is disposed a distance away from an interior surface of the housing, such as the floor of the housing, forming a particle trap. The conductive mesh is biased so that the electrical field within the trap is either non-existent or pushing toward the floor, so as to retain particles within the trap. Additionally, a particle mover, such as a fan or mechanical vibration device, can be used to urge particles into the openings in the mesh. Furthermore, a conditioning phase may be used prior to operating the high voltage terminal, whereby a voltage is applied to the conductive mesh so as to attract particles toward the particle trap.Type: ApplicationFiled: December 4, 2008Publication date: June 11, 2009Inventors: Stephen E. Krause, Russell J. Low, Kasegn D. Tekletsadik
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Publication number: 20090145228Abstract: Techniques for reducing an electrical stress in a acceleration/deceleration system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an acceleration/deceleration system. The acceleration/deceleration system may comprise an acceleration column including a plurality of electrodes having apertures through which a charged particle beam may pass. The acceleration/deceleration system may also comprise a plurality of voltage grading components respectively electrically coupled to the plurality of electrodes. The acceleration/deceleration system may further comprise a plurality of insulated conductors disposed proximate the plurality of voltage grading components to modify an electrical field about the plurality of voltage grading components.Type: ApplicationFiled: January 2, 2008Publication date: June 11, 2009Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. TEKLETSADIK, Russell J. LOW
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Publication number: 20090078554Abstract: Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.Type: ApplicationFiled: September 26, 2007Publication date: March 26, 2009Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Douglas E. May, Kasegn D. Tekletsadik, Eric Hermanson, Piotr R. Lubicki, Russell J. Low, Joseph C. Olson, Stephen E. Krause
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Publication number: 20090057572Abstract: Terminal structures of an ion implanter having insulated conductors with dielectric fins are disclosed. In one particular exemplary embodiment, the terminal structures of an ion implanter may be realized with insulated conductors with one or more dielectric fins. For example, the ion implanter may comprise an ion source configured to provide an ion beam. The ion implanter may also comprise a terminal structure defining a cavity, wherein the ion source may be at least partially disposed within the cavity. The ion implanter may further comprise an insulated conductor having at least one dielectric fin disposed proximate an exterior portion of the terminal structure to modify an electric field.Type: ApplicationFiled: August 27, 2007Publication date: March 5, 2009Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Kasegn D. Tekletsadik, Eric Hermanson, Doug May, Steve Krause, Russel John Low