Patents by Inventor Kasra Daneshvar

Kasra Daneshvar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5698942
    Abstract: A field emitter flat panel display and associated method of operation provides an electron emission path along which a beam of electrons emitted by a microelectronic field emitter travels such that the electrons impinge upon a light emitting element without passing through a mirror. The light emitting element is spaced apart from the microelectronic field emitter and includes a mirror and a luminescence layer on the mirror. The flat panel display can also include a deflector, such as a deflector electrode, which is spaced apart from both the microelectronic field emitter and the associated light emitting element and which controllably deflects the beam of electrons emitted by the microelectronic field emitter toward the luminescent layer of the associated light emitting element and along a curved electron emission path which is independent of the underlying mirror.
    Type: Grant
    Filed: July 22, 1996
    Date of Patent: December 16, 1997
    Assignee: University of North Carolina
    Inventors: Richard F. Greene, Stephen M. Bobbio, Farid M. Tranjan, Kasra Daneshvar, Thomas D. DuBois
  • Patent number: 5216359
    Abstract: Internal test sites on integrated circuit chips may be tested with minimal input/output pad or chip area overhead by providing transient interconnections to the internal test sites using an optically activated photoconductive layer which is formed over the active device layers of the integrated circuit to be tested. The photoconductive layer may be optically activated using an optical mask or hologram, to electrically access the desired internal test sites. Different test sites may be tested using different masks or holograms. The photoconductive layer is preferably hydrogenated amorphous silicon which is highly compatible with standard integrated circuit processing.
    Type: Grant
    Filed: January 18, 1991
    Date of Patent: June 1, 1993
    Assignee: University of North Carolina
    Inventors: Rafic Z. Makki, Kasra Daneshvar, Farid M. Tranjan, Richard F. Greene