Abstract: In various embodiments described herein, a display device comprising a light collection film and a photovoltaic device disposed on an edge of the collection film. The collection film has a plurality of light-turning features for redirecting light between the front and back surface of the collection film and the photovoltaic device. In some embodiments, a light source is also disposed on an edge of the collection film and emits light which is turned by the light-turning features toward the display.

Abstract: Modulator devices are selectably adjustable between at least two states, wherein the transmission and/or reflection of particular wavelengths of light are modified. Certain modulator devices are substantially uniformly adjustable over a wide range of wavelengths, including visible and infrared wavelengths. Other modulator devices are adjustable over visible wavelengths without significantly affecting infrared wavelengths. In addition, the modulator devices may be used in conjunction with fixed thin film reflective structures.

Abstract: A display with a photovoltaic (PV) cells integrated as the front side and/or back side of the display is disclosed. Ambient light may reach a PV cell situated behind a display through fully or partially transmissive features within the display. Display-generated light may also reach a PV cell behind a display. A transmissive PV material situated in front of a display may collect both ambient light as well as display-generated light.

Abstract: A display with patterned photovoltaic (PV) material integrated on the front side and/or back side of the display is disclosed. Light may reach PV material situated behind a display through fully or partially transmissive features or gaps within the display. Display-generated light may also reach PV material behind a display. A patterned PV material situated in front of a display may collect both ambient light as well as display-generated light.

Abstract: Color photovoltaic (PV) devices formed using interferometric stacks tuned to reflect color covering the front side or back side of a PV cell, device, panel, or array are disclosed. Interferometric stacks covering PV devices include interferometric modulators (IMODs), or dichroic pair stacks. Such devices can be configured to reflect enough light of select wavelengths so as to impart a color, while transmitting enough light to the PV active material so as to generate useful electricity.

Abstract: Certain embodiments include interferometrically tuned photovoltaic cells wherein reflection from interfaces of layered photovoltaic devices coherently sum to produce an increased field in an active region of the photovoltaic cell where optical energy is converted into electrical energy. Such interferometrically tuned or interferometric photovoltaic devices (iPV) increase the absorption of optical energy in the active region of the interferometric photovoltaic cell and thereby increase the efficiency of the device. In various embodiments, one or more optical resonant cavities and/or optical resonant layers is included in the photovoltaic device to increase the electric field concentration and the absorption in the active region.

Abstract: In certain embodiments, a device is provided that utilizes both interferometrically reflected light and transmitted light. Light incident on the device is interferometrically reflected from a plurality of layers of the device to emit light in a first direction, the interferometrically reflected light having a first color. Light from a light source is transmitted through the plurality of layers of the device to emit from the device in the first direction, the transmitted light having a second color.

Abstract: An embodiment for a pixel for a display device on a substrate is disclosed. The pixel includes a first interferometric modulator on the substrate. The first interferometric modulator has a first normal direction substantially perpendicular to the first interferometric modulator and a first angularly-dependent reflectivity function comprising a first reflectivity in a first direction and a second reflectivity in a second direction, with the first reflectivity being greater than the second reflectivity. The pixel also includes a second interferometric modulator on the substrate. The second interferometric modulator has a second normal direction substantially perpendicular to the second interferometric modulator and a second angularly-dependent reflectivity function comprising a third reflectivity in the second direction and a fourth reflectivity in the first direction, with the third reflectivity being greater than the fourth reflectivity.

Abstract: Methods, devices, and systems provide MEMS devices exhibiting at least one of reduced stiction, reduced hydrophilicity, or reduced variability of certain electrical characteristics using MEMS devices treated with water vapor. The treatment is believed to form one or more passivated surfaces on the interior and/or exterior of the MEMS devices. Relatively gentle temperature and pressure conditions ensure modification of surface chemistry without excessive water absorption after removal of sacrificial material to release the MEMS devices.

Abstract: Disclosed are methods and systems for testing MEMS devices (e.g., interferometric modulators) so as to induce a moveable element to move from a first position to a second position and to detect the movement. The methods include applying an electrical current to the movable element in the presence of a magnetic field, thereby producing a Lorentz force on the movable element. The force required to move the movable element from the first position to the second position can then be estimated based on the magnitudes and geometric relationships of the electrical current and the magnetic field, and the geometry of the movable element. In some embodiments, the first position may be a movable element adhered to another surface (e.g., a layer on a substrate) due to stiction forces. In these embodiments, the stiction forces can be estimated.

Abstract: There is described an improved Surface Reflectance Instrument which achieves more complete detection of surface defects in the nature of small particles. One of the improvements is the use of an elliptical integrated cavity with internal surface mirrors, and another the use of a position sensing diode as the detector for the scattered light. Other improvements and the use of a stable laser at a particular wavelength resulting in greater detection are also described.

Abstract: There is described an improved Surface Reflectance Instrument which achieves more complete detection of surface defects in the nature of small particles. One of the improvements is the use of an elliptical integrated cavity with internal surface mirrors, and another the use of a position sensing diode as the detector for the scattered light. Other improvements and the use of a stable laser at a particular wavelength resulting in greater detection are also described.

Abstract: A method and apparatus for the mapping, measurement, and determination of the layer of lubrication on the surface of hard magnetic disks. This is achieved through the use of measurements made with optical instrumentation capable of making a number of measurements based on illuminating the hard disk surface with polarized light which is specularly reflected, analyzed, and recorded. An initial measurement is made of the surface layer of lubricant and then the lubricant is removed and another measurement is made of the surface of the disk. The second scan is then subtracted from the first scan to provide a representation of the lubricant layer.

Abstract: The present invention generally provides a method for depositing a low dielectric constant amorphous carbon film on a substrate or other workpiece using high density plasma chemical vapor deposition (HDP-CVD) techniques. Specifically, the present invention provides a method for forming an amorphous carbon film having a low dielectric constant of less than about 3.0 and a high thermal stability at a temperature of at least about 400° C. In a preferred embodiment, the film is deposited using methane (CH4) and argon in a HDP-CVD reactor. The amorphous carbon film formed according to the invention is useful for many applications in ultra large scale integration (ULSI) structures and devices, such as for example, an inter-metal dielectric material and an anti-reflective coating useful for patterning sub-micron interconnect features.

Abstract: A method of depositing a dielectric film on a substrate, comprising depositing a silicon oxide layer on the substrate; and treating the dielectric layer with oxygen. A layer of FSG having a fluorine content of greater than 7%, as measured by peak height ratio, deposited by HDP CVD, is treated with an oxygen plasma. The oxygen treatment stabilizes the film. In an alternative embodiment of the invention a thin (<1000 Å thick) layer of material such as silicon nitride is deposited on a layer of FSG using a low-pressure strike. The low pressure strike can be achieved by establishing flows of the process gases such that the pressure in the chamber is between 5 and 100 millitorr, turning on a bias voltage for a period of time sufficient to establish a weak plasma, which may be capacitively coupled. After the weak plasma is established a source voltage is turned on and subsequently the bias voltage is turned off.