Patents by Inventor Katano Kizuku

Katano Kizuku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-type gaas single crystal and method for manufacturing the same
    Patent number: 6325849
    Abstract: Disclosed are a P-type GaAs single crystal having an average dislocation density of 500 cm−2 or lower, and a manufacturing method therefor. The P-type GaAs single crystal is characterized by containing, as dopants, Si at an atomic concentration of from 1×1017 to 1×1019 cm−3 and Zn at an atomic concentration of from 2×1018 to 6×1019 cm−3. Further, as another example, B is contained at an atomic concentration of from 1×1017 to 1×1020 cm−3.
    Type: Grant
    Filed: July 7, 1999
    Date of Patent: December 4, 2001
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Fujisawa Hideo, Katano Kizuku, Yamamoto Osamu