Patents by Inventor Katashi Masumoto

Katashi Masumoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5849113
    Abstract: High temperature coefficient of resistance (TCR) appropriate for the sensor evices is attained by an alloy consisting, by atomic %, of from 5 to 65% of Fe, and from 0.01 to 20% in total of at least one auxiliary component selected from the group consisting of 20% or less of Ni, 20% or less of Co, 20% or less of Ag, 20% or less of Au, 20% or less of Pt, 10% or less of Rh, 10% or less of Ir, 10% or less of Os, 10% or less of Ru, 10% or less of Cr, 5% or less of V, 5% or less of Ti, 5% or less of Zr, 5% or less of Hf, 8% or less of Mo, 5% or less of Nb, 10% or less of W, 8% or less of Ta, 3% or less of Ga, 3% or less of Ge, 3% or less of In, 3% or less of Be, 5% or less of Sn, 3% or less of Sb, 5% or less of Cu, 5% or less of Al, 5% or less of Si, 2% or less of C, 2% or less of B, and 5% or less of a rare earth element, the balance being essentially Pd and minor amount of impurities, and said alloy having 4000.times.10.sup.-6.degree. C..sup.-1 or more of TCR in a temperature range of from 0.degree. to 200.
    Type: Grant
    Filed: September 27, 1996
    Date of Patent: December 15, 1998
    Assignee: The Foundation: The Research Institute of Electric and Magnetic Alloys
    Inventors: Yuetsu Murakami, Katashi Masumoto, Naoji Nakamura
  • Patent number: 5725687
    Abstract: The present invention relates to a wear-resistant high permeability alloy nsisting of Ni, Nb, C and Fe, a wear-resistant high permeability alloy consisting of Ni, Nb, C and Fe as main components and at least one element selected from the group consisting of Cr, Mo, Ge, Au, Co, V, W, Cu, Ta, Mn, Al, Si, Ti, Zr, Hf, Sn, Sb, Ga, In, Tl, Zn, Cd, rare earth element, platinum element, Be, Ag, Sr, B, P, N, O, S as a secondary component and a method of manufacturing the same and a magnetic recording and reproducing head, and an object of the invention is to obtain an excellent wear-resistant magnetic alloy having easy forging processability, a large effective permeability, a saturated flux density of more than 4000G, and a recrystallization texture of {110}<112>+{311}<112>+{111}<112>, and a wear-resistant high permeability alloy consisting by weight of Ni 60-90%, Nb 0.5-14%, C 0.0003-0.
    Type: Grant
    Filed: October 30, 1995
    Date of Patent: March 10, 1998
    Assignee: The Foundation: The Research Institute of Electric and Magnetic Alloys
    Inventors: Yuetsu Murakami, Katashi Masumoto
  • Patent number: 5547520
    Abstract: The present invention provides a method for manufacturing a wear resistant igh permeability alloy consisting by weight of 60-90% Ni, 0.5-14% Nb, 0.0003-0.3% N and O in total (excluding 0% of N or O), and a remainder of Fe. The alloy has more than 3000 of effective permeability at 1 KHz, more than 4000 G of a saturated flux density and a recrystallization texture of {110}<112>+{311}<112>.
    Type: Grant
    Filed: January 31, 1995
    Date of Patent: August 20, 1996
    Assignee: The Foundation: The Research Institute of Electric and Magnetic Alloys
    Inventors: Yuetsu Murakami, Katashi Masumoto
  • Patent number: 5496419
    Abstract: The present invention provides a wear resistant high permeability magnetic lloy Ni, Nb, N, O and Fe as main components. The alloy may include secondary components of at least one element selected from the group consisting of Cr, Mo, Ge, Au, Co, V, W, Cu, Ta, Mn, Al, Si, Ti, Zr, Hf, Sn, Sb, Ga, In, Tl, Zn, Cd, rare earth element, platinum element, Be, Ag, Sr, Ba, B, P, C and S. The magnetic alloy has good wear resistance having easy forgeability, a large effective permeability, more than 4000 G of a saturated flux density and a recrystallization texture of {110}<112>+{311}<112>.
    Type: Grant
    Filed: June 6, 1994
    Date of Patent: March 5, 1996
    Assignee: The Foundation: The Research Institute of Electric and Magnetic Alloys
    Inventors: Yuetsu Murakami, Katashi Masumoto
  • Patent number: 5323410
    Abstract: The present invention relates to a solid solution semiconductor laser element material which can be used for a laser element which oscillates within an inflated region of wavelength range of 0.4-8 .mu.m, can vary wavelength and can be operable in the vicinity of room temperature. The present invention more particularly relates to a material which can be used for a laser element having a lattice matching type double hetero-structure or lattice matching type quantum well structure.
    Type: Grant
    Filed: September 24, 1992
    Date of Patent: June 21, 1994
    Assignee: The Foundation: The Research Institute of Electric and Magentic Alloys
    Inventors: Katashi Masumoto, Katsumi Mochizuki, Naoji Nakamura, Seishi Abe
  • Patent number: 5319658
    Abstract: The present invention relates to a solid solution semiconductor laser element material which can form a laser element which oscillates in an infrared region of wavelength 0.2-8 .mu.m, varies wavelength and is operable in the vicinity of room temperature, particularly a laser element of a lattice-matching double hetero junction or lattice-matching quantum well structure. The disclosed solid state semiconductor is made of a material selected from a material having the general chemical formulaCa.sub.1-x Pb.sub.x Xwhere, 0<x<0.5 and X is at least one element selected from S, Se and Te, a material having the general chemical formulaCa.sub.1-x (Pb.sub.1-y Y.sub.y).sub.x Xwhere, 0<x.ltoreq.0.5, 0<y<1, X is at least one element selected from S, Se and Te and Y is at least one element selected from Zn and Mn, and a material having the general chemical formulaCa.sub.1-x Pb.sub.x S.sub.1-z Se.sub.zwhere, <x.ltoreq.0.4 and 0.ltoreq.z.ltoreq.1.
    Type: Grant
    Filed: December 29, 1992
    Date of Patent: June 7, 1994
    Assignee: The Foundation: The Research Institute of Electric and Magnetic Alloys
    Inventors: Katashi Masumoto, Katsumi Mochizuki, Seishi Abe
  • Patent number: 4599184
    Abstract: A process for producing a ferromagnetic liquid comprising fine particles of a ferromagnetic material and a surface-active liquid, which comprises a step of heating said ferromagnetic material to evaporate it, and a step of bringing the resulting vapor of the ferromagnetic material into contact with the surface-active liquid being stirred.
    Type: Grant
    Filed: January 29, 1985
    Date of Patent: July 8, 1986
    Assignee: National Research Institute
    Inventors: Isao Nakatani, Katashi Masumoto
  • Patent number: 4589918
    Abstract: A thermoelectric material comprising an alloy, a solid solution or an alloy and a solid solution consisting essentially of(a) iron disilicide,(b) 0.3 to 4.6 atomic %, based on the total amount of the whole component elements, of boron and optionally,(c) 0.1 to 5.0 atomic %, based on the total amount of the whole component elements, of one element or more selected from the group of zinc, cadmium and mercury of Group IIB, aluminum, gallium, indium and thallium of Group IIIB, phosphorus, arsenic, antimony and bismuth of Group VB, sulfur, selenium and tellurium of Group VIB, chromium, molybdenum and tungsten of Group VIA, manganese, technetium and rhenium of Group VIIA and cobalt, nickel, rhodium, palladium, iridium and platinum of Group VIII in the periodic table of elements.
    Type: Grant
    Filed: March 28, 1984
    Date of Patent: May 20, 1986
    Assignee: National Research Institute for Metals
    Inventors: Isao Nishida, Katashi Masumoto
  • Patent number: 4176370
    Abstract: A photovoltaic converter, useful for example as a photodetector or solar cell, comprising a main unit consisting of a p-n heterojunction of a p- or n-type magnetic semiconductor MCr.sub.2 X.sub.4 in which M is Zn, Cd or Hg and X is O, S, Se or Te and an n- or p-type semiconductor M'In.sub.2 S.sub.4 in which M' is Zn, Cd or Hg and which has an optical absorption edge at a shorter wavelength than the optical absorption edge of the MCr.sub.2 X.sub.4 ; a first electrode ohmically fixed to the surface of the MCr.sub.2 X.sub.4 ; and a second electrode fixed ohmically to the surface of the M'In.sub.2 S.sub.4 and allowing light to reach the surface of M'In.sub.2 S.sub.4. With a decrease in temperature, the photovoltaic converter has the long wavelength edge of its spectral photovoltaic response shifted to a longer wavelength contrary to known photovoltaic converters.
    Type: Grant
    Filed: February 22, 1978
    Date of Patent: November 27, 1979
    Assignee: National Research Institute for Metals
    Inventors: Nobuyuki Koguchi, Katashi Masumoto
  • Patent number: 4086508
    Abstract: A can for use in a canned motor made of a soft magnetic metal plate. Said metal plate has the magnetically hard direction of the texture oriented to the circumferential direction of the can body. Said metal plate also has the magnetically easy direction of the texture oriented to the normal direction of the can body.
    Type: Grant
    Filed: August 15, 1977
    Date of Patent: April 25, 1978
    Assignees: The Director National Research Institute for Metals, Kabushiki Kaisha Maekawa Seisakusho
    Inventors: Katashi Masumoto, Ei-ichi Furubayashi, Wahei Inoue
  • Patent number: 3986194
    Abstract: An injection-type laser light emitting semiconductor device comprising a main unit in the shape of a generally rectangular parallelepiped comprising a layer of a magnetic semiconductor for emitting laser light and at least one layer of semiconductor having the same crystal structure and substantially the same lattice constant as those of the magnetic semiconductor and also having a greater optical energy gap than that of the magnetic semiconductor, both end surface of the main unit perpendicular to the coalescing surface of the two layers serving as reflecting plates for the emission of laser light, and a pair of electrodes fixed ohmically to the under surface and top surface of the main unit. This device affords laser light whose wavelength varies over a relatively wide range according to changes in the oprical energy gap of the magnetic semiconductor as a result of changing the temperature and/or applied magnetic field.
    Type: Grant
    Filed: August 11, 1975
    Date of Patent: October 12, 1976
    Assignee: National Research Institute for Metals
    Inventors: Katashi Masumoto, Nobuyuki Koguchi