Patents by Inventor Katharina Kaiser

Katharina Kaiser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tuning local conductances of molecular networks: applications to artificial neural networks
    Patent number: 11823032
    Abstract: A method for tuning the conductance of a molecular network includes a network of covalently bound molecular units, which are molecular entities assembled so as to form a network that can typically be compared to a finite, imperfect 2D crystal. Each of the molecular entities includes: a branching junction; M branches (M?3) branching from said branching junction, where each of the M branches comprises an aliphatic group; and M linkers, each terminating a respective one of the M branches. Each of the M linkers is covalently bound to a linker of another molecular entity of the network. The method involves tuning the electrical conductance of molecular entities of a subset of the molecular entities of the network, in one or several (e.g., parallel or successive) steps.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: November 21, 2023
    Assignee: International Business Machines Corporation
    Inventors: Leo Gross, Shadi Fatayer, Florian Albrecht, Fabian Schulz, Katharina Kaiser
  • Semiconductor device, microphone and methods for forming a semiconductor device
    Patent number: 11352253
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Grant
    Filed: September 17, 2020
    Date of Patent: June 7, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • Semiconductor Device, Microphone and Methods for Forming a Semiconductor Device
    Publication number: 20210002132
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • Semiconductor device, microphone and methods for forming a semiconductor device
    Patent number: 10858246
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: December 8, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg
  • Tuning Local Conductances Of Molecular Networks: Applications To Artificial Neural Networks
    Publication number: 20200234104
    Abstract: A method for tuning the conductance of a molecular network includes a network of covalently bound molecular units, which are molecular entities assembled so as to form a network that can typically be compared to a finite, imperfect 2D crystal. Each of the molecular entities includes: a branching junction; M branches (M?3) branching from said branching junction, where each of the M branches comprises an aliphatic group; and M linkers, each terminating a respective one of the M branches. Each of the M linkers is covalently bound to a linker of another molecular entity of the network. The method involves tuning the electrical conductance of molecular entities of a subset of the molecular entities of the network, in one or several (e.g., parallel or successive) steps.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 23, 2020
    Inventors: Leo Gross, Shadi Fatayer, Florian Albrecht, Fabian Schulz, Katharina Kaiser
  • SEMICONDUCTOR DEVICE, MICROPHONE AND METHODS FOR FORMING A SEMICONDUCTOR DEVICE
    Publication number: 20180237292
    Abstract: A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 23, 2018
    Inventors: Markus Kahn, Anna-Katharina Kaiser, Soenke Pirk, Juergen Steinbrenner, Julia-Magdalena Straeussnigg