Patents by Inventor Katherine Dickey

Katherine Dickey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-nary group IB and VIA based semiconductor
    Patent number: 8889469
    Abstract: Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: November 18, 2014
    Assignee: aeris CAPITAL Sustainable IP Ltd.
    Inventors: David B. Jackrel, Katherine Dickey, Kristin Pollock, Jacob Woodruff, Peter Stone, Gregory Brown
  • Multi-nary group IB and VIA based semiconductor
    Patent number: 8729543
    Abstract: Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy.
    Type: Grant
    Filed: August 11, 2011
    Date of Patent: May 20, 2014
    Assignee: aeris CAPITAL Sustainable IP Ltd.
    Inventors: David B. Jackrel, Katherine Dickey, Kristin Pollock, Jacob Woodruff, Peter Stone, Gregory Brown
  • MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR
    Publication number: 20120313200
    Abstract: Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
    Type: Application
    Filed: June 26, 2012
    Publication date: December 13, 2012
    Applicant: Nanosolar, Inc.
    Inventors: David B. Jackrel, Katherine Dickey, Kristin Pollock, Jacob Woodruff, Peter Stone, Gregory Brown
  • MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR
    Publication number: 20120270363
    Abstract: Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form.
    Type: Application
    Filed: January 5, 2012
    Publication date: October 25, 2012
    Inventors: David Jackrel, Katherine Dickey, Kristin Pollock, Jacob Woodruff, Luke Ryves, Peter Stone, Gregory Brown
  • MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR
    Publication number: 20120168910
    Abstract: Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy.
    Type: Application
    Filed: August 11, 2011
    Publication date: July 5, 2012
    Inventors: David B. Jackrel, Katherine Dickey, Kristin Pollock, Jacob Woodruff, Peter Stone, Gregory Brown
  • LOW COST SOLAR CELLS FORMED USING A CHALCOGENIZATION RATE MODIFIER
    Publication number: 20110294254
    Abstract: Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form.
    Type: Application
    Filed: December 28, 2010
    Publication date: December 1, 2011
    Inventors: David B. Jackrel, Katherine Dickey, Jacob Woodruff