Abstract: A device for treatment of limbs affected with Lymphedema. The device is a crevice collar which fits into depressed areas and crevices created by over-hanging lobules and protrusions of tissue so that the tissue may be comfortably wrapped with a pressure wrap with exacerbating sores and crevice areas in the skin caused by the Lymphedema.

Abstract: A device for treatment of limbs affected with Lymphedema. The device is a crevice collar which fits into depressed areas and crevices created by over-hanging lobules and protrusions of tissue so that the tissue may be comfortably wrapped with a pressure wrap with exacerbating sores and crevice areas in the skin caused by the Lymphedema.

Abstract: An Internet-facilitated storage, shipping, cleaning and maintenance service and method thereof, wherein the repeated, time-consuming management and organization of personal belongings, the burdensome process of packing, and the increasingly complicated chore of carrying and/or checking luggage may be essentially eliminated.

Abstract: A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminium to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminium mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10?4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10?8 mbar and aluminium is supplied at a beam equivalent pressure of at least 1 10?8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminium enables a second (Al,Ga)N layer, having a different aluminium mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.

Abstract: A method of growing a p-type nitride semiconductor material by molecular beam epitaxy (MBE) uses bis(cyclopentadienyl)magnesium (Cp2Mg) as the source of magnesium dopant atoms. Ammonia gas is used as the nitrogen precursor for the MBE growth process. To grow p-type GaN, for example, by the method of the invention, gallium, ammonia and Cp2Mg are supplied to an MBE growth chamber; to grow p-type AlGaN, aluminium is additionally supplied to the growth chamber. The growth process of the invention produces a p-type carrier concentration, as measured by room temperature Hall effect measurements, of up to 2 1017 cm-3, without the need for any post-growth step of activating the dopant atoms.

Abstract: A semiconductor light-emitting device and a method of manufacture thereof A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure (16) fabricated in a nitride materials system and including an aluminium-containing cladding region or an aluminium-containing optical guiding region (5). The etching step forms a mesa (17), and also exposes one or more portions of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5). The or each exposed portion of the aluminium-containing cladding region or the aluminium-containing optical guiding region (5) Is then oxidised to form a current blocking layer (18) laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer (11) is deposited, the current blocking layer (18) will prevent the contact layer (11) from making direct contact with the buffer layer (3).

Abstract: A method of manufacturing a semiconductor light-emitting device is provided. The method includes the step of depositing an electrically conductive material on one or more selected portions of the surface of a semiconductor wafer including a substrate and a layer structure, the layer structure having at least a first semiconductor layer of a first conductivity type and a second semiconductor conductivity layer of a second conductivity type different from the first conductivity type, the first layer being between the second layer and the substrate, such that the electrically conductive material forms a contact to the first semiconductor layer. The method further includes the step of dicing the wafer to form a plurality of light-emitting devices, each light-emitting device having a respective part of the electrically conductive material.

Abstract: A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers (11,13,15,17) with each pair of barrier layers being separated by a quantum well layer (12,14,16), comprises annealing each barrier layer (11,13,15,17) separately. Each barrier layer (11,13,15,17) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step.

Abstract: A method of fabricating a continuous wave semiconductor laser diode in the (Al,Ga,In)N materials system comprises: growing, in sequence, a first cladding region (4), a first optical guiding region (5), an active region (6), a second optical guiding region (7) and a second cladding region (8). Each of the first cladding region (4), the first optical guiding region (5), the active region (6), the second optical guiding region (7) and the second cladding region (8) is deposited by molecular beam epitaxy.

Abstract: A semiconductor light-emitting device fabricated in a nitride material system has an active region (5) disposed over a substrate (1). The active region (5) comprises a first aluminium-containing layer (12) forming the lowermost layer of the active region, a second aluminium-containing layer (14) forming the uppermost layer of the active region, and at least one InGaN quantum well layer (13) disposed between the first aluminium-containing layer (12) and the second aluminum-containing layer (14). The aluminium-containing layers (12,14) provide improved carrier confinement in the active region (5), and so increase the output optical power of the device. The invention may be applied to a light-emitting diode (11) or to a laser diode.

Abstract: A portable image analysis system including a hand held head assembly with an imaging window in the bottom of a housing, at least one light source in the housing directed at the imaging window, and an imaging device in the housing optically coupled to the imaging window. A computer, coupled to the hand held head assembly includes an imaging quality analysis program and a monitor for displaying images in the imaging window of the housing captured by the imaging device of the hand held head assembly for performing in situ image quality measurements.