Abstract: A transistor device includes a first source/drain region and a second source/drain region spaced apart from each other; a channel layer electrically connected to the first and second source/drain regions; a gate insulator layer; a gate electrode isolated from the channel layer by the gate insulator layer; and a UV-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by UV light.

Abstract: Methods of protecting a metallic substrate from corrosion include introducing an aqueous or powder-form composition including at least one corrosion inhibitor into a crevice that traverses one or more layers covering the metallic substrate to deliver the composition via the crevice into contact with a surface of the metallic substrate. The corrosion inhibitors present in the composition bond to the surface of the metallic substrate, resulting in formation of a film on the surface of the metallic substrate. This film protects the surface of the metallic substrate against corrosion.