Patents by Inventor Kathleen A. Kehle

Kathleen A. Kehle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrode for thin film capacitor devices
    Patent number: 7545625
    Abstract: A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: June 9, 2009
    Assignee: Raytheon Company
    Inventors: John J. Drab, Thomas K. Dougherty, Kathleen A. Kehle
  • Electrode for thin film capacitor devices
    Publication number: 20080106846
    Abstract: A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.
    Type: Application
    Filed: December 20, 2007
    Publication date: May 8, 2008
    Inventors: John Drab, Thomas Dougherty, Kathleen Kehle
  • Electrode for thin film capacitor devices
    Patent number: 7335552
    Abstract: A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: February 26, 2008
    Assignee: Raytheon Company
    Inventors: John J. Drab, Thomas K. Dougherty, Kathleen A. Kehle
  • Electrode for thin film capacitor devices
    Publication number: 20030216017
    Abstract: A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.
    Type: Application
    Filed: May 15, 2002
    Publication date: November 20, 2003
    Inventors: John J. Drab, Thomas K. Dougherty, Kathleen A. Kehle