Patents by Inventor Kathleen Esther Theodorou

Kathleen Esther Theodorou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11164739
    Abstract: According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n ??(I), in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: November 2, 2021
    Assignee: Versum Materials US, LLC
    Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou
  • Publication number: 20190244810
    Abstract: According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n ??(I), in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.
    Type: Application
    Filed: February 6, 2019
    Publication date: August 8, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou
  • Patent number: 10249489
    Abstract: Low dielectric organosilicon films are deposited by a process comprising the steps of: providing a substrate within a vacuum chamber; introducing into the vacuum chamber a gaseous silicon containing precursor composition comprising at least one organosilicon precursor selected from the group consisting of Formula (I) and Formula (II): wherein, R1, R2, R3, R4, R5, and R6 are as defined herein, and applying energy to the gaseous structure forming composition in the vacuum chamber to induce reaction of the at least one organosilicon precursor to deposit a film on at least a portion of the substrate.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: April 2, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou, Andrew J. Adamczyk
  • Patent number: 9976037
    Abstract: Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.
    Type: Grant
    Filed: March 29, 2016
    Date of Patent: May 22, 2018
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Seiji Inaoka, William Jack Casteel, Jr., Raymond Nicholas Vrtis, Kathleen Esther Theodorou, Tianniu Chen, Mark Richard Brown
  • Publication number: 20180122632
    Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
    Type: Application
    Filed: October 20, 2017
    Publication date: May 3, 2018
    Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jennifer Lynn Anne Achtyl, William Robert Entley, Dino Sinatore, Kathleen Esther Theodorou, Andrew J. Adamczyk
  • Publication number: 20160289455
    Abstract: Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.
    Type: Application
    Filed: March 29, 2016
    Publication date: October 6, 2016
    Applicant: Air Products and Chemicals, Inc.
    Inventors: Seiji Inaoka, William Jack Casteel, JR., Raymond Nicholas Vrtis, Kathleen Esther Theodorou, Tianniu Chen, Mark Richard Brown