Abstract: The invention related to devices and methods wherein the conditions, under which surface plasmon resonance is established, are modified by altering the balance between orientations of the spins of charge carriers in an SPR layer. The embodiments of this invention may be used as logical gates, optical filters and absorbers, optoelectronic mixers, and tunable surface plasmon sensors.

Abstract: The invention related to devices and methods wherein the conditions, under which surface plasmon resonance is established, are modified by altering the balance between orientations of the spins of charge carriers in an SPR layer. The embodiments of this invention may be used as logical gates, optical filters and absorbers, optoelectronic mixers, and tunable surface plasmon sensors.

Abstract: An improved alloyed ohmic contact to n-type GaAs is provided utilizing a Si-based metallization of Si/Au/Ni and exhibiting low contact resistivity and high thermal stability. An improved process for fabricating the inventive contact is also provided comprising the step of first depositing the Si film on the GaAs substrate, thereby simplifying the fabrication of monolithically integrated devices, particularly advanced electro-optic devices, by incorporating self-aligned Si-based contacts in the process. A further improvement is provided in the use of a lift-off-defined Si layer as a reactive-ion etch mask to serve as the self-aligned contact in the process, thereby eliminating a critical photolithographic step of aligning the contact metallization.

Abstract: Integrated lenses are fabricated on LED devices by chemical etching mesas through mask openings which are non-circular. The mask is removed and the mesas are then etched to form spherical lenses.