Patents by Inventor Kathleen Russell

Kathleen Russell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hydrosilylation catalysts
    Patent number: 8236915
    Abstract: Disclosed herein are manganese, iron, cobalt, or nickel complexes containing terdentate pyridine diimine ligands and their use as efficient and selective hydrosilylation catalysts.
    Type: Grant
    Filed: July 8, 2010
    Date of Patent: August 7, 2012
    Assignees: Momentive Performance Materials Inc., Cornell University
    Inventors: Johannes G. P. Delis, Susan A. Nye, Kenrick M. Lewis, Keith J. Weller, Paul J. Chirik, Aaron M. Tondreau, Sarah Kathleen Russell
  • Hydrosilylation Catalysts
    Publication number: 20110009573
    Abstract: Disclosed herein are manganese, iron, cobalt, or nickel complexes containing terdentate pyridine diimine ligands and their use as efficient and selective hydrosilylation catalysts.
    Type: Application
    Filed: July 8, 2010
    Publication date: January 13, 2011
    Inventors: Johannes G.P. Delis, Susan A. Nye, Kenrick M. Lewis, Keith J. Weller, Paul J. Chirik, Aaron M. Tondreau, Sarah Kathleen Russell
  • Validating an invoice in a wireless telecommunication system
    Patent number: 7269407
    Abstract: A method that provides improved invoice validation in a wireless telecommunication system comprises receiving billing input data for a circuit and indicating a discrepancy if a billed amount and a calculated amount differ by greater than a threshold amount, the billing input data including the billed amount. In addition the method includes indicating billing parameters used to create the calculated amount.
    Type: Grant
    Filed: September 19, 2002
    Date of Patent: September 11, 2007
    Assignee: Cingular Wireless II, LLC
    Inventors: Betty Jane Carmon, Gay Lynn Nechvatal, John Carmen Guido, George J. Ondercin, III, Joyce T. Horiuchi, Kathleen Russell, Ona I. Taylor
  • Chemical vapor deposition reactor system and integrated circuit
    Patent number: 5648175
    Abstract: A method of and apparatus for depositing a silicon oxide layer onto a wafer or substrate is provided. The present method includes introducing into a processing chamber a process gas including silicon, oxygen, boron, phosphorus and germanium to form a germanium doped BPSG oxide layer having a reflow temperature of less than 800.degree. C. Preferred embodiments of the present method are performed in either a subatmospheric CVD or a plasma enhanced CVD processing apparatus.
    Type: Grant
    Filed: February 14, 1996
    Date of Patent: July 15, 1997
    Assignee: Applied Materials, Inc.
    Inventors: Kathleen Russell, Stuardo Robles, Bang C. Nguyen, Visweswaren Sivaramakrishnan